Abstract
Compared with traditional thermoelectric materials, layered oxyselenide thermoelectric materials consist of nontoxic and lower-cost elements and have better chemical and thermal stability. Recently, several studies on n-type layered oxyselenide thermoelectric materials, including BiCuSeO, Bi2O2Se and Bi6Cu2Se4O6, were reported, which stimulates us to comprehensively summarize these researches. In this short review, we begin with various attempts to realize an n-type BiCuSeO system. Then, we summarize several methods to optimize the thermoelectric performance of Bi2O2Se, including carrier engineering, band engineering, microstructure design, et al. Next, we introduce a new type of layered oxyselenide Bi6Cu2Se4O6, and n-type transport properties can be obtained through halogen doping. At last, we propose some possible research directions for n-type layered oxyselenide thermoelectric materials.
Highlights
Thermoelectric (TE) materials can achieve the direct transition between heat and electricity without producing other pollutants, providing an effective solution to the energy crisis and environmental problems [1,2]
ZT value ~0.23 at 823 K is achieved in Bi2 O2 Se0.985 Cl0.015 (Figure 7d), which demonstrates that Cl is an effective dopant to optimize the thermoelectric performance of Bi2 O2 Se
To fully utilize the features of BiCuSeO and Bi2 O2 Se, a new type layered oxyselenide Bi6 Cu2 Se4 O6 was synthesized through solid state reaction (SSR) with the 1:2 ratio of BiCuSeO and Bi2 O2 Se (Figure 10a) [28,29,30], and stable n-type conductive transports were observed in this system through halogen element doping [29]
Summary
Thermoelectric (TE) materials can achieve the direct transition between heat and electricity without producing other pollutants, providing an effective solution to the energy crisis and environmental problems [1,2]. Due to the weak Van der Waals interaction between layers [9,35,36,37], the large displacement of the Cu atom [38,39] and the heavy Bi atom [3,40,41], BiCuSeO has intrinsically low thermal conductivity [42], which is an inherent advantage as a thermoelectric material. Different from BiCuSeO, the intrinsic Bi2 O2 Se exhibits n-type transport properties due to a large number of Se vacancies in the crystal structure [43,44]. O66isisa anew new type layered oxyselenide thermoelectric material crystal structure of.
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