Structure Of Thin Films Research Articles

Chemical state and atomic structure in stoichiovariants photochromic oxidized yttrium hydride thin films

Abstract We investigate the effective oxidation state and local environment of yttrium in photochromic YHO thin film structures produced by e-beam evaporation, along with their chemical structure and optical properties. Transmission electron microscopy images reveal the oxidized yttrium hydride thin film sample exhibiting a three-layered structure. X-ray photoelectron spectroscopy (XPS) measurements manifest that the oxidation state of yttrium is modified, dependent on the film’s composition/depth. Furthermore, Ion beam analysis confirms that this variability is associated with a composition gradient within the film. X-ray absorption spectroscopy at the Y K-edge reveals that the effective oxidation state of yttrium is approximately +2.5 in the transparent/bleached state of YHO. Spectroscopic ellipsometry investigations showed a complex non-linear optical depth profile of the related sample confirming the dominant phase of YHO and the presence of Y2O3 and Y towards the middle of the film. The first evidence of (n; k) dispersion curves for e-beam sputtered photochromic YHO thin films are reported for transparent and dark states.

Research Progress of Thin Film Structures of All-Solid-State Lithium-Ion Battery

Research Progress of Thin Film Structures of All-Solid-State Lithium-Ion Battery

Effects of Dy on structural, morphology, optical, and resistive switching properties of HfO2 thin films

This paper studies the effect of Dy on the structure, morphology, and optical properties of HfO2 thin films deposited on fused silica substrates and the optical transparency and resistive switching (RS) behavior of the thin films as an active insulator layer in Ag/active insulator layer/ITO/glass memories. Thin films were deposited by spin-coating using a precursor solution obtained by the Pechini-type sol-gel method. The structural analysis revealed that the insertion of Dy ions into the HfO2 lattice caused the phase transformation from the monoclinic to the cubic phase. Morphological analysis revealed that the thin films had thicknesses between 98 and 101 nm, and their surfaces were composed of 3D islands formed by aggregates of spherical particles ranging from 8 to 5 nm. The active insulator layers had thicknesses ranging from 235 to 218 nm, with no cavities or cracks between them. The optical transparency of the active insulator layer/ITO/glass memory structures was between 70 and 87 %. Optical transmittance, optical bandgap, and optical constants were modified incorporating Dy ions into HfO2 thin films compared to the undoped HfO2 thin films. Incorporating Dy ions into HfO2 increased oxygen vacancies in the active insulator layers. The memory with 10 w% of Dy had the highest resistance off/on ratio of 9.04 compared with undoped HfO2 memory. Also, the conduction mechanism in the high resistive state (HRS) of the memory with 10 w% of Dy was related to ohmic conduction and space charge limited conduction (SCLC).

From non‐doped to dopable: The impact of methoxy functionalization on doping and thermoelectric properties of conjugated polymers

AbstractThe introduction of alkoxy side chains into the backbone of conjugated polymers is an effective way to change their properties. While the impact on the structure and optoelectronic properties of polymer thin films was well‐studied in organic solar cells and transistors, limited research has been conducted on their effects on doping and thermoelectric properties. In this study, the effects of methoxy functionalization of conjugated backbones on the doping and thermoelectric properties are investigated through a comparative study of diketopyrrolopyrrole‐based conjugated polymers with and without methoxy groups (P29DPP‐BTOM and P29DPP‐BT, respectively). Methoxy‐functionalization significantly enhances doping efficiency, converting undopable pairs to dopable ones. This dramatic change is attributed to the structural changes in the polymer film caused by the methoxy groups, which increases the lamellar spacing and facilitates the incorporation of dopants within the polymer crystals. Moreover, methoxy‐functionalization is advantageous in improving the Seebeck coefficient and power factor of the doped polymers, because it induces a bimodal orientational distribution in the polymer, which contributes to the increased splitting of Fermi and charge transport levels. This study demonstrates the impact of methoxy‐functionalization of a conjugated polymer on doping behavior and thermoelectric properties, providing a guideline for designing high‐performance conjugated polymers for thermoelectric applications.image

Nanocomposite coatings for wear protection at high temperatures

The investigation results of friction and wear of the developed detonation composite coatings FeAl2-Ti-Si-B under high-temperature friction conditions are presented. The choice of FeAl2-Ti-Si-B composition and its optimal content for spraying wear-resistant coatings loaded with friction under high-temperature conditions are justified. It is noted that the alloying elements at definite concentrations and technological parameters of spraying have a positive influence on the structure, properties, and quality assurance of multicomponent coatings. It is shown that the introduction of silicon and boron contributes the formation of hard-alloy high-temperature compounds with increased wear resistance. The maximum microhardness corresponds to the Cr-Si coatings with ~ 28 % titan content. In addition, the mechanical properties of the obtained material are improved by additional alloying of ~ 22 % silicon and bor. In turn, the coatings plating at a working gas flow rate in a ratio for acetylene ~ (20/25) l/min and oxygen ~ (22/27) l/min provides the chemical composition and spraying process parameters permanence as well as constant properties of coatings. The obtained results show that for the coatings of FeAl2-Ti-Si-B system at loading 5.0 MPa, sliding speed 1.5 m/s, and temperature up to 650 °C the stable performance of structural adaptability, which ensures the friction and wear parameters minimization, is demonstrated. The metallographic analysis and strip chart recording of specimens indicate that the friction surfaces are characterized by the absence of visible defects; the separate cold-welded regions are located in thin-film surface layers. The composition, structure, and tribological durability of coatings produced from the elements of the country's resource base were studied; their high adhesion, physical and mechanical characteristics and wear resistance under high-temperature conditions were defined. The thin-film surface structure patterns and properties were investigated with the help of modern physical and chemical methods of analysis. It was determined that the combination of mechanical, physical, and chemical properties of the investigated coatings provides vide opportunities for their usage as effective materials under high-temperature wear conditions. According to the test results, the application of the investigated composite coatings for friction unit efficiency improvement provides their operational reliability in accordance with requirements and opportunities that appear with the development of a new competitive material for wear-resistant coatings obtained with the help of the detonation method. Keywords: detonation coating: wear resistance, surface layer, structural adaptability, temperature.

MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio

AbstractA Ti2AlN MAX phase layered thin film electrode and oxygen getter layer for HfO2‐based two‐terminal memristors is presented. The Ti2AlN/HfOx/Ti memristor devices exhibit enhanced resistive switching performance, including an ultra‐low reset current density (< 10−8 MΩ cm2), substantial on‐off ratio (≈ 6000), excellent multi‐level functionality (≈ 9 distinct states), impressive retention (up to 300 °C), and robust endurance (>200 million) as compared to conventional TiN and other alternative materials based memristors. Experimental measurements and modeling suggest that the distinctive combination of low thermal conductivity, high electrical conductivity, and unique ultra‐thin layer‐by‐layer structure of the Ti2AlN MAX phase thin film contribute to this exceptional performance with good reproducibility and stability. The results demonstrate for the first‐time the potential of this innovative sputtered MAX phase material for engineering energy‐efficient, high‐density non‐volatile digital, and analog memory devices aimed toward next‐generation sustainable artificial intelligence.

Effect of doping with cobalt on the structure and optical properties of zinc oxide thin films prepared by sol-gel method

In this study, pure zinc oxide films doped with a cobalt percentage of 3% were prepared using Sol-Gel spin coating technique on a glass substrate at a temperature of 100 degrees Celsius. The structural and optical properties of these films have been studied. Structure properties are obtained by using x-ray diffraction (XRD) technique, they were carried out using a device of type (Panalytical X ‘Pert pro) with a target of type (Cu Kα) and a wavelength of (λ = 1.541 Ao). The diagnostic results showed that these films are polycrystalline and have a hexagonal structure with preferential orientation at (101). The Optical properties are concluded from absorption and transmission measurements, which are obtained by using the double beam UV-Visible1800 spectrophotometer in the wavelength (300–800) nm. It was found that the absorbance increases with increasing the doping percentage (1, 2, 3, and 4)mol%, while the transmittance is decreased. The optical properties also included the energy gap, the absorption coefficient, the reflectivity, the refractive index, the extinction coefficient, and the dielectric constant in its real and imaginary parts. It was found that the energy gap values decreased in the range 3.32–3.03 eV and the transmittance rate was 90% within the visible spectrum region.

Scaled Production of Functionally Gradient Thin Films Using Slot Die Coating on a Roll-to-Roll System.

Polymer thin films with a cross-web gradient structure is a burgeoning area of research, having received more attention in the last two decades, for improvements in the performance and material properties. Such patterned films have been fabricated using several techniques, but in practice these techniques are non-scalable, material-dependent, wasteful, and not highly efficient. Slot die coating, a well-known scalable manufacturing process, is used to fabricate gradient polymer thin films which will be investigated herein. By incorporating slot die with the custom roll-to-roll imaging system, gradient thin films are successfully fabricated by forcing two fluidic materials into the slot die simultaneously and by manipulating the viscous, diffusive, and inertial forces. The materials will be allowed to intermix, with the aim of having approximately a 50% mix along the centerline of any two contiguous stripes. Moreover, several characterizations such as FTIR, UV-vis spectroscopy, and SEM are performed to assess the quality of the gradient polymer thin films. The gradient structure fabricated using functional and nonfunctional materials has successfully improved the functional properties compared to fully blended two materials. This work will provide an understanding of the mechanisms to obtain gradient polymer thin-film structures that exhibit the desired geometric structure and performance.

Buckling and post buckling analysis of spatial thin film structures under shearing based on perturbation method

Spatial thin film structures exhibit high sensitivity to shear deformation, often exhibiting wrinkling phenomena under minimal shear loads. In this study, we used a combined experimental and theoretical approach to investigate the wrinkling and post-buckling behaviors of thin films subjected to shear forces. Initially, we designed and fabricated a high-precision experimental apparatus, which, in conjunction with the MTS Exceed 40 series universal testing machine, was a versatile experimental platform for evaluating the responses of thin films to shear. Subsequently, we extended the classical Föppl–von Kármán nonlinear plate model to capture the large deformation behaviors of thin films under shear. This development led to the formulation of governing equations that describe the shear-induced deformation of the films. We introduced two boundary conditions to characterize these deformations: one in which the non-loaded edge was free (unconstrained), and another in which the non-loaded edge was constrained (analogous to a frame constraining a painting). To solve the governing equations, we treated the incremental shear displacement angle of the thin film as a small parameter and devised a numerical method grounded in perturbation theory. We further formulated an implicit difference method of arbitrary order accuracy to enhance the precision and stability of the numerical solution. Our experimental and theoretical analyses revealed a comprehensive buckling pathway for thin films under shear, characterized by an initial wrinkling configuration (Config. 1), followed by a transition to a secondary wrinkling state (Config. 2), and culminating in a wrinkling splitting pattern (Config. 3). We also determined that by increasing the pre-stretching of thin films, their resistance to wrinkling along the entire buckling pathway could be significantly enhanced.

Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al1−xBxN, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al1−xBxN films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.

Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (112¯2) substrate using cathodoluminescence in transmission electron microscopy

Defect structures of semipolar GaN thin film, grown on the m-plane of sapphire, were investigated using the home-built cathodoluminescence (CL) stage in TEM. The CL maps with high spatial resolution identify the type of basal plane stacking faults (BSFs) and visualize their distribution. I1-BSF type defects had the highest population and the I2-BSF type defect was revealed in the form of thin strips with less population. Partial dislocations and basal stacking fault-related defects existed in the form of segmented lines but with strong luminescence characteristics. TEM-CL was able to identify the distribution and the characteristic luminescence from the defects, which were difficult to discern in the typical defect analysis.

Photon Echo on Excitons and Its Role in the Development of Nanoelectronic Devices Based on Quantum-Sized Structures in Thin Zinc Oxide Films

Photon Echo on Excitons and Its Role in the Development of Nanoelectronic Devices Based on Quantum-Sized Structures in Thin Zinc Oxide Films

Structure and Electrical Conductivity of Thin AlN Films on Si

Structure and Electrical Conductivity of Thin AlN Films on Si

Observation of transition from superfluorescence to polariton condensation in CsPbBr3 quantum dots film

The superfluorescence effect has received extensive attention due to the many-body physics of quantum correlation in dipole gas and the optical applications of ultrafast bright radiation field based on the cooperative quantum state. Here, we demonstrate not only to observe the superfluorescence effect but also to control the cooperative state of the excitons ensemble by externally applying a regulatory dimension of coupling light fields. A new quasi-particle called cooperative exciton-polariton is revealed in a light-matter hybrid structure of a perovskite quantum dot thin film spin-coated on a Distributed Bragg Reflector. Above the nonlinear threshold, polaritonic condensation occurs at a nonzero momentum state on the lower polariton branch owning to the vital role of the synchronized excitons. The phase transition from superfluorescence to polariton condensation exhibits typical signatures of a decrease of the linewidth, an increase of the macroscopic coherence as well as an accelerated radiation decay rate. These findings are promising for opening new potential applications for super-brightness and unconventional coherent light sources and could enable the exploitation of cooperative effects for quantum optics.

Methylation of Si(111) Modulates Molecular Orientation in Perylenediimide Thin Films.

Singlet fission produces a pair of low-energy spin-triplet excitons from a single high-energy spin-singlet exciton. While this process offers the potential to enhance the efficiency of silicon solar cells by ∼30%, meeting this goal requires overlayer materials that can efficiently transport triplet excitons to an underlying silicon substrate. Herein, we demonstrate that the chemical functionalization of silicon surfaces controls the structure of vapor-deposited thin films of perylenediimide (PDI) dyes, which are prototypical singlet fission materials. Using a combination of atomic force microscopy (AFM) and grazing-incidence wide-angle X-ray scattering (GIWAXS), we find terminating Si(111) with either a thin, polar oxide layer (SiOx) or with hydrophobic methyl groups (Si-CH3) alters the structures of the resulting PDI films. While PDI films grown on SiOx are comprised of small crystalline grains that largely adopt an "edge-on" orientation with respect to the silicon surface, films grown on Si-CH3 contain large grains that prefer to align in a "face-on" manner with respect to the substrate. This "face-on" orientation is expected to enhance exciton transport to silicon. Interestingly, we find that the preferred mode of growth for different PDIs correlates with the space group associated with bulk crystals of these compounds. While PDIs that inhabit a monoclinic (P21/c) space group nucleate films by forming tall and sparse crystalline columns, PDIs that inhabit triclinic (P1̅) space groups afford films comprised of uniform, lamellar PDI domains. The results highlight that silicon surface functionalization profoundly impacts PDI thin film growth, and rational selection of a hydrophobic surface that promotes "face-on" adsorption may improve energy transfer to silicon.

Structure evolution and energy band modulation in Ba-doped BiFeO3 thin films

Bi1−xBaxFeO3 (BBFO, x = 0, 0.03, 0.1) thin films were epitaxially grown on SrRuO3-buffered SrTiO3 (001) substrates by pulsed laser deposition. With increasing Ba content, the BBFO thin films show significantly reduced leakage currents but suppressed ferroelectric polarization. X-ray diffraction reciprocal space mappings and Raman spectra indicate a structural evolution from a rhombohedral-like to tetragonal-like phase in the BBFO thin films. Optical absorption and photoelectron spectroscopy measurements demonstrate a modulation of energy band structures in the BBFO thin films. With A-site Ba acceptor doping, the BBFO thin films exhibit a blue-shift of optical bandgap and an increase in work function. The energy positions of conduction and valence bands of the BBFO thin films have been modulated, and the Fermi level shifts down to the center of the forbidden band, but acceptor-doped BFO thin films still show n-type conduction. The presence of extra oxygen vacancies by acceptor doping is supposed to make contribution to conduction behavior. This study provides a method to manipulate the functional properties and gives insights into the physics of Ba doping in BFO thin films.

Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

AbstractThe utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2 is favorable to achieving higher capacitance density in metal–insulator–metal capacitors with ZrO2 thin films, it decreases the capacitance with increasing applied bias in Mo/ZrO2/InGaZnO (IGZO)‐structured MIS capacitors. Through comprehensive physical, chemical, and electrical characterizations, this study investigated the mechanism underlying the decreasing capacitance with increasing the applied bias in the accumulation state of the Mo/ZrO2/IGZO‐structured MIS capacitor depending on the crystallinity of ZrO2. Furthermore, the investigation identifies the optimal crystal structure of ZrO2 thin films for IGZO‐based MIS capacitors, highlighting the importance of forming meso‐crystalline structures in high dielectric constant (k) materials to enhance the k value and mitigating the decrease in capacitance caused by the accumulated carrier loss through grain boundaries of ZrO2.

Role of triethanolamine complexing agent in chemical bath deposition of tin sulfide thin films: Microstructural and optical properties

This paper reports the experimental results studying the structure, optical and dielectric properties of tin monosulfide thin films. Tin monosulfide (SnS) films were deposited on glass substrate by chemical bath deposition to study the role of triethanolamine (TEA: complexing agent) concentration on the film properties. X-ray diffraction spectra reveal that the films exhibit mainly cubic phase which remain stable over the range of TEA concentration (3.0 M − 5.0 M). FTIR spectra indicate the S-Sn bond stretching in all films. Raman spectroscopy analysis shows the presence of minor trace of secondary SnS2 phase (along with main cubic π-SnS phase) in all films. SEM micrographs show cauliflower-like surface morphology of all films. Optical results reveal that the films possess high value of absorption coefficient (≥105 cm−1) in the visible region. Direct optical transition behavior is observed in all films. From Tauc plots, the calculated optical band gap (Eg) varies from 1.79 eV to 1.91 eV with the variation in TEA concentration. The dielectric constant, refractive index and an extinction coefficient are also calculated and observed to decrease with increasing TEA concentration. Experimental results suggest that an appropriate concentration of a complexing agent (TEA) can be chosen to obtain crystalline films without deterioration of crystalline structure and phase, not effecting Eg significantly.

Pure and barium substituted bismuth ferrite as ethanol gas sensor

Pure and Barium substituted bismuth ferrite thin films are developed on glass substrate via spray pyrolysis technique. The outcome of barium substitution to bismuth ferrite for the ethanol gas detecting capability is carried out in this study. The Energy Dispersive X-Ray (EDS) results confirmed the occurrence of Barium, Bismuth and Ferrous in the developed thin film. The X-Ray Diffraction (XRD) results confirmed the perovskite structure of the bismuth ferrite thin film. The modification of the surface roughness and particle sizes are seen in the developed thin film from the results of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The gas sensing characterization carried out on the developed thin films disclose that, it is more selective to ethanol gas. It is found that operating temperature at which the gas is detected, reduced with barium substitution. The results obtained from the characterization study confirm that the developed thin films can be used for ethanol gas sensing applications.

Manipulation of domain structures in LiNbO3 thin films using focused ion beam

In this study, we utilized focused ion beam (FIB) technology to generate domains with a size of approximately 500 nm in LiNbO3 thin films. These films were synthesized using the rf sputtering technique. To investigate these domains, we employed scanning Kelvin probe microscopy (SKPM) and Piezoresponse force microscopy (PFM) techniques. PFM was specifically employed to examine the polarization characteristics of these domains. Notably, we observed distinct contrast in the phase data of neighboring domains. A phase contrast of 180° indicated that the polarization direction in the two neighboring polarized domains was antiparallel. Within the ferroelectric phase, the SKPM method measured a characteristic potential change of approximately 35 mV across neighboring ferroelectric domains with opposite polarization directions (180°-domains). Moreover, we observed that upon illumination, the average surface potential increased by approximately 80 mV. This increase has been attributed to the light-induced population of surface states.