Structure Of Thin Films Research Articles

Unraveling the Heat- and UV-Induced Degradation of Mixed Halide Perovskite Thin Films via Surface Analysis Techniques.

In recent years, organic-inorganic hybrid perovskite materials have become one of the most promising materials in the new generation of solar cells. These perovskites can provide excellent photoelectric properties after a simple fabrication process. Although perovskite solar cells have achieved high power conversion efficiency, instability concerns regarding material exposure to heat, moisture, air, and UV light present hindrances to commercialization. In this study, three kinds of perovskites (MAPbI3, MAPbI3-xBrx, and MAPbI3-xClx) were used to investigate the crystal stability upon exposure to heat and UV light. SEM, XRD, and FTIR were used to observe the surface morphology, crystal structure, and functional groups of the perovskite thin films. XPS was used to examine the surface composition and chemical state of the perovskite thin films under different conditions. Among these three types of perovskites, it was found that the MAPbI3-xBrx crystal demonstrated the best stability. ToF-SIMS was used to confirm the molecular distribution of the MAPbI3-xBrx films upon exposure to heat and UV light at different depths. ToF-SIMS revealed that [Pb]+ and [PbI]+ aggregated at the interface between the perovskite and ITO substrate after 14 days of thermal treatment. On the other hand, [Pb]+ and [PbI]+ were distributed uniformly after 3 days of UV exposure. This study systematically analyzed and revealed the thermal- and UV-induced degradation process of three perovskite films by using surface analysis techniques. It was concluded that bromine-doped perovskite films had better stability, and UV light caused more severe damage than heat.

Adsorbent-Embedded Polymeric Membranes for Efficient Dye-Water Treatment.

Traditional bulk adsorbents, employed for the removal of dyes and metal ions, often face the drawback of requiring an additional filtration system to separate the filtrate from the adsorbent. In this study, we address this limitation by embedding the adsorbent into the polymer matrix through a process involving dissolution-dispersion, spin-casting, and heat-stretching. Selective dissolution and dispersion facilitate the integration of the adsorbent into the polymer matrix. Meanwhile, spin-casting ensures the formation of a uniform and thin film structure, whereas heat-induced stretching produces a porous matrix with a reduced water contact angle. The adsorbent selectively captures dye molecules, while the porous structure contributes to water permeability. We utilized inexpensive and readily available materials, such as waste polyethylene and calcium carbonate, to fabricate membranes for the removal of methylene blue dye. The effects of various parameters, such as polymer-adsorbent ratio, initial dye concentration, and annealing temperature, were investigated. Equilibrium data were fitted to Langmuir, Freundlich, Temkin, and Dubinin-Radushkevich isotherms. The equilibrium data were best represented by the Langmuir isotherm, with maximum adsorption capacity of 35 mg/g and 43 mg/g at 25 °C and 45 °C, respectively. The membranes can be regenerated and recycled with a 97% dye removal efficiency. The study aims to present a template for adsorbent-embedded polymeric membranes for dye removal, in which adsorbent can be tailored to enhance adsorption capacity and efficiency.

Электрофизические и температурные характеристики тонких слоёв квантовых точек Ag2S

This paper presents a study of the electrical properties of colloidal silver sulfide quantum dots thin films (Ag2S/SiO2 QDs) and silver sulfide quantum dots decorated with Au plasmon nanoparticles (Ag2S/SiO2/Au QDs). A study of the conductivity temperature dependences was carried out in the temperature range from 300 to 360 K. The activation energy values were obtained from linear approximations of the current-voltage characteristics in Arrhenius coordinates. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to an increase in the band gap from 0.29 to 0.89 eV. In this work, the ideality factor is calculated and the main conductivity mechanisms of the presented thin-film structures are determined. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to a change in the conductivity type. According to the Mott-Gurney model, the charge carriers mobility is calculated.

Development of Bio-Photoelectrochemical Hybrids for Solar Energy Conversion

Recent advancements in solar energy conversion have identified bio-photoelectrochemical hybrids as one of the most promising sustainable techniques. This study integrates BiVO4 and TiO2 semiconductors with photoautotrophic microorganisms (e.g., Algae) to enhance solar energy conversion. Thin films of these materials were prepared and characterized, revealing a relatively smooth surface for BiVO4 while structures for TiO2 thin films deposited as nanorods. Optical properties showed band gaps of ≤ 3.1 and 2.4 eV for TiO2 and BiVO4, respectively. The point of zero charge of materials was investigated, indicating that naturally occurring biofilm formation might not be favorable for as-prepared materials. To overcome this challenge, we aimed to use polyelectrolytes to enhance attachment of cells on the surface of semiconductor and in this regards we determined the biocompatibility of using this approach. Photoelectrochemical (PEC) measurements were conducted to evaluate solar energy conversion efficiency. This study offers insights into optimizing biosystem attachment, biofilm stability, and PEC performance of coupled semiconductors with photoautotrophic microorganisms as one photoelectrode in PEC cell, advancing sustainable solar energy conversion technologies.

Atomically Resolved Phase Coexistence in VO2 Thin Films.

Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

Effect of Picosecond Laser Irradiation on the Properties of Nanostructured Zinc Oxide Thin Films

In this article, a picosecond laser source was employed to irradiate the nanostructured ZnO thin film prepared by the sol-gel method. The impact of laser irradiation on the characteristics of a nanostructured ZnO thin film was investigated. Analysis using X-ray diffraction, scanning electron microscopy, and Fourier transform infrared spectroscopy confirmed a significant influence on the structure of the ZnO thin film. As the duration of laser irradiation (the number of laser pulses) increased, there was a remarkable decrease in both the electronic and photoluminescence intensities of the nanostructured film. Tauc's plot indicates a noticeable change in the optical band gaps of the thin film with the increase in irradiation time. The morphological image suggests that the laser irradiation energy induces both degradation and modification of the film surface, consequently causing changes in the structural, absorption, and photoluminescence properties of nanostructured ZnO. The observed effects are attributed to alterations in the crystal structure and size of the nanostructured ZnO film, as confirmed by XRD. The reduction in photoluminescence intensity observed over the laser irradiation times may be a result of potential degradation in the crystalline structure of the nanostructured ZnO film.

High-performance solar-blind photodetectors based on Ta-doped ZnSnO3 single crystal thin films

High-quality Ta-doped ZnSnO3 single crystal thin films were grown on LiTaO3 substrates by pulsed laser deposition (PLD) method, and the effects of Ta doping on the lattice structure, surface morphology, electronic structure and photodetector performance of ZnSnO3 thin films are studied in detail. When the Ta doping content is 1 %, the [0001]-oriented ZnSnO3 thin film present the highest quality, which the optical band gap (3.75 eV), the smoothest surface roughness (0.83 nm), and the biggest carrier concentration (4.03 × 1019 cm−3). For the solar-blind photodetectors (PDs), based on these excellent characteristics, the 1 % Ta-doped ZnSnO3 PD exhibits large light-to-dark current ratio (>103), responsivity (21.37 A/W), detectivity ((3.63±0.71) ×1011 Jones) and external quantum efficiency (∼1.04× 104 %) under 254 nm UV light at an applied bias of 5 V. This study suggests that Ta doping can effectively improve the optoelectronic performance of ZnSnO3 PDs, laying the foundation for their application.

Flash soldering of boron nitride nanosheets for all-ceramic films

The assembly of boron nitride nanosheets (BNNSs) into strong, flexible thin films capable of withstanding extreme conditions, such as high/low working temperatures and corrosive environments, holds promise for numerous applications. However, Assmebling and sintering of BNNS into dense thin film can be challenging. We report the rapid fabrication of dense BNNS all-ceramic films (BACFs) in 30 s by combining the fabrication strategies for 2D and ceramic materials. In this process, densely arranged and highly oriented BNNSs are flash soldered into a monolith achieved by precisely controlled ultrafast sintering. This fusion of BNNS leads to an ultrahigh in-plane thermal conductivity of 134.5 W·m−1·K−1. The as-prepared BACF exhibits the combined advantages of sintered ceramics (durability, stability, acid-alkali resistance) and 2D material films such as flexibility and shock resistance, which is important for practical uses. It also has excellent cooling performance, dielectric properties, and good thermal stability, which is promising for demanding thermal management applications in emerging technologies.

Influence of Silsesquioxane-Containing Ultra-Thin Polymer Films on Metal Oxide Gas Sensor Performance for the Tunable Detection of Biomarkers

Certain biomarkers in exhaled breath are indicators of diseases in the human body. The non-invasive detection of such biomarkers in human breath increases the demand for simple and cost-effective gas sensors to replace state-of-the-art gas chromatography (GC) machines. The use of metal oxide (MOX) gas sensors based on thin-film structures solves the current limitations of breath detectors. However, the response at high humidity levels, i.e., in the case of exhaled human breath, significantly decreases the sensitivity of MOX sensors, making it difficult to detect small traces of biomarkers. We have introduced, in previous work, the concept of a hybrid gas sensor, in which thin-film-based MOX gas sensors are combined with an ultra-thin (20–30 nm) polymer top layer deposited by solvent-free initiated chemical vapor deposition (iCVD). The hydrophobic top layer enables sensor measurement in high-humidity conditions as well as the precise tuning of selectivity and sensitivity. In this paper, we present a way to increase the hydrogen (H2) sensitivity of hybrid sensors through chemical modification of the polymer top layer. A poly(1,3,5,7-tetramethyl-tetravinylcyclotetrasiloxane) (PV4D4) thin film, already applied in one of our previous studies, is transformed into a silsesquioxane-containing top layer by a simple heating step. The transformation results in a significant increase in the gas response for H2 ~709% at an operating temperature of 350 °C, which we investigate based on the underlying sensing mechanism. These results reveal new pathways in the biomedical application field for the analysis of exhaled breath, where H2 indicates gastrointestinal diseases.

Aluminum-doped zinc oxide thickness controllable wavelengths in visible light and high responsivity devices using interrupted flow atomic layer deposition

In this study, we develop a highly sensitive visible light photodetector that utilizes a thin-film structure composed of low-cost aluminum-doped zinc oxide (AZO) and n-type silicon. The AZO thickness can be adequately controlled to fit the different wavelengths of interest for photodetectors in the visible light range using interrupted flow atomic layer deposition (ALD). This in situ aluminum doping method ensures a uniform aluminum distribution within the AZO thin films and effectively increases the internal film reflections and photoresponsivity. The Schottky interface with n-type silicon is created by degenerated AZO due to the lower Fermi level, and visible light can effectively penetrate the underlying depletion zone. Optical simulation of the high conductivity of AZO indicated that the optimal thickness was 54.6, 65.8, and 91.7 nm for devices illuminated with 450 nm blue, 525 nm green and 700 nm red light, respectively. Hall effect measurements confirmed that the AZO film can achieve a low resistivity of 5 × 10–4 Ω-cm and high carrier concentration of 3 × 1020 cm−3 at a suitable precursor ratio. Additionally, AZO films offer multifunctionality by providing optical antireflective properties and forming Schottky junctions with n-type silicon to enable photoelectric conversion. This multifunctional role of AZO was experimentally validated through electrical, optical, and optical-to-electrical experiments, which showed that the optimized device can reach an optical responsivity of approximately 10.7 AW−1 at specific visible light wavelengths. The significant photoelectrical conversion efficiency and simple thin-film structure design facilitate future applications in light intensity measurement, such as in colorimetry or fluorometry.

Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after the crystallization process

The effect of strain on the ferroelectricity of HfO2 thin films after crystallization was investigated by applying uniaxial mechanical strains to Au/HfO2/TiN metal–ferroelectric–metal (MFM) capacitors. The remnant polarization (2P r) of MFM capacitors increased when tensile strain was applied during polarization switching. This phenomenon should not be attributed to phase transformation from the non-ferroelectric to the ferroelectric phase, taking account of the fast relaxation of 2P r after removal of the mechanical strain and the fact that the crystal structure of HfO2 thin films evaluated by grazing incidence X-ray diffraction measurement was not changed by the tensile strain.

Giant Seebeck coefficient in SnTe thin films grown by thermal evaporation using layered structure engineering

In this work, we have reported a giant Seebeck coefficient (8033 µV/K) in SnTe thin films by controlling the layered structure using post growth annealing technique. The samples used in the current study were synthesized using a vacuum tube furnace having an evaporation temperature 700 °C, base pressure 180 m Torr and source to substrate distance 7 cm. Sn and Te metal powders with an equal weight ratio were evaporated on the glass substrate to form SnTe composite. Post-growth annealing in vacuum environment was performed for different time’s duration of 1–4 h with a step of one hour. XRD analysis reveals six diffraction peaks for all samples, which correspond to different crystal planes of SnTe structure. Raman spectra exhibit the presence of specific vibrational modes associated with SnTe. Using the giant value of Seebeck coefficient and moderate electrical conductivity, a strong power factor value of 8.1 × 10−3 W m−1 K−2 was observed for optimized sample (annealed for 3 h). The strongest values of Seebeck coefficient and power factor are supposed to be the layered structure of SnTe thin films which was verified by the SEM images.

Analisis Struktur Film Tipis Disperse Orange-3 Hasil FTIR

A thin film is a material that coats a substrate with a thickness of not more than 10 µm. Thin film technology has undergone many developments, both in terms of the method of manufacture, the materials used and their application in technology. The linear formula of the DO3 molecule is as follows: = and molecular weight of this is 242.23. The purpose of this study was to determine the molecular structure of the FTIR-resulted DO3 thin films. The result of this research was wave number 3434 cm-1 has O-H molecular structure, 3404 cm-1 has O-H molecular structure, 3128 cm-1 has N-H molecular structure, 2927 cm-1 has C-H molecular structure, 1641 cm-1 has C=C molecular structure, 1600 cm-1 has C=C molecular structure, 1513 cm-1 has C=C molecular structure molecule 〖NO〗_2, 1456 cm-1 has a molecular structure C-H, 1425 cm-1 has a molecular structure C-H, 1393 cm-1 has a molecular structure N=N, 1342 cm-1 has a molecular structure 〖NO〗_2 , 1139 cm-1 has a molecular structure C-N, 1133 cm-1 has a molecular structure C-N molecule, 1107 cm-1 has a C-N molecular structure, 1043 cm-1 has a C-O molecular structure, 856 cm-1 has a C-H molecular structure, 831 cm-1 has a C-H molecular structure, 754 cm-1 has a C-H molecular structure, and 658 cm-1 has a C-C molecular structure.

Topological semimetal interface resistivity scaling for vertical interconnect applications

In this work, we explore the electron scattering characteristics at interfaces between normal metals and topological semimetals in bulk as well as in thin film structures. We consider Cu/Ta and CoSi/Ta as representative metal/metal and topological semimetal/metal interface structures, respectively. For bulk interface structures, we find that metal/topological semimetal interfaces have roughly 20× higher interfacial resistivity than normal metal/metal interfaces primarily due to the low electronic density of states, the Fermi level in bulk topological semimetals. For thin films, we find that normal metal/metal interfacial resistivity shows a weak dependence on film thickness and is generally close to the corresponding bulk value. Interfaces between surface-conduction dominated topological semimetals, such as CoSi and normal metals in thin films, however, show decreasing interfacial resistivity with decreasing film thickness. This apparent reduction in interface resistivity originates from the surface-dominated transport, where the total transmission across the interface varies little with reduced film thickness, yielding an effective increase in interface conductivity at smaller dimensions. These results suggest that topological semimetals may be attractive candidates for next-generation interconnect materials with critically small dimensions where interfaces with other metals are ubiquitous.

Structure and optical properties of Si thin film improved by metal Cd nanolayers

Enhancing the characteristics of amorphous semiconductor thin films is imperative for a multitude of applications. The present study examines the impact of Cd nanolayers deposited on a thin film of amorphous Si. The X-ray test showed that the thin silicon film had less of an amorphous structure after a nanolayer of cadmium was added. There has also been the appearance of new phases, and as the thickness of the Cd nanolayer increases, so does the intensity of these phases. Using a field emission scanning electron microscope, it was seen that nanoparticles were developed and subsequently transformed into clusters as the thickness of the Cd nanolayer grew. The absorbance was maximized at 750 nm and near-infrared region after depositing Cd nanolayers, while transmittance was reduced, especially at 100 nm thicknesses. The energy gap was reduced, with a decrease from 5.1 to 1.8 electron volts (eV). However, an increase in the band tails was also noted, rising from 0.7 to 4.9 eV. An increase in the values of the refractive index (n) and extinction coefficient (k) was observed following the deposition of Cd nanolayers of different thicknesses.

Semiconductor Membrane Exfoliation: Technology and Application

AbstractFlexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications. It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. Instead, they are typically fabricated on conventional rigid thick semiconductor substrates. Consequently, the exfoliation and transfer of epitaxial semiconductor thin film structures onto substrates constitute pivotal steps in the production of flexible optoelectronic devices. The integration of hard inorganic semiconductor materials with flexible substrates offers a solution to the limitations of rigidity and brittleness associated with conventional optoelectronic devices and can be used to address challenges from design to manufacturing. This review provides a comprehensive overview of the working principles and recent advances of various techniques aimed at achieving the membrane exfoliation and transfer of semiconductor structures on conventional rigid substrates. It also reviews the possible applications of the transferred membrane in a variety of optoelectronic devices. Finally, it offers insights into the potential of high‐end semiconductor manufacturing and flexible semiconductor devices to play a critical role in advancing next‐generation optoelectronics technologies.

Ferromagnetism behavior of Ni-doped Fe3O4 thin films synthesized by the SILAR technique

In this article, Ni-doped Fe3O4 thin films were synthesized by using the SILAR technique. The films were characterized through X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), Raman, Photoluminescence and UV–Vis analysis. The XRD spectrum confirms the spinal structure of undoped and Ni-doped Fe3O4 thin films. The FESEM images show that Ni-doping has changed the morphology of thin films from a granular to a Spiky structure. The EDAX and XPS spectra show Fe, Ni and O elements are present in 1%Ni-doped Fe3O4 thin film. The vibrating sample magnetometer (VSM) studies showed ferromagnetism in undoped and Ni-doped Fe3O4 thin films. The ferromagnetism behavior of Ni-doped Fe3O4 thin films increases with the increase in Ni ion concentration.

Stray Magnetic Field Variations and Micromagnetic Simulations: Models for Ni0.8Fe0.2 Disks Used for Microparticle Trapping.

Patterned micro-scale thin-film magnetic structures, in conjunction with weak (~few tens of Oe) applied magnetic fields, can create energy landscapes capable of trapping and transporting fluid-borne magnetic microparticles. These energy landscapes arise from magnetic field magnitude variations that arise in the vicinity of the magnetic structures. In this study, we examine means of calculating magnetic fields in the local vicinity of permalloy (Ni0.8Fe0.2) microdisks in weak (~tens of Oe) external magnetic fields. To do this, we employ micromagnetic simulations and the resulting calculations of fields. Because field calculation from micromagnetic simulations is computationally time-intensive, we discuss a method for fitting simulated results to improve calculation speed. Resulting stray fields vary dramatically based on variations in micromagnetic simulations-vortex vs. non-vortex micromagnetic results-which can each appear despite identical simulation final conditions, resulting in field strengths that differ by about a factor of two.

Synthesis and Characterization of ZnO-CuO Nanocomposites Thin Film for Optoelectronics Applications

In this work, the spray pyrolysis technique on glass substrates at 480°C was effectively used to generate ZnO, CuO, and n-ZnO/p-CuO nanocomposite thin films. The structure of the ZnO thin films exhibited a hexagonal wurtzite type. In the visible region of the spectrum (400–700 nm), the resulting films had optical transmission ranging from 73% to 83% and optical band gap fluctuations of 3.23 to 3.25 eV. Analysis of the m-lines spectroscopy revealed that the obtained thin layers (ZnO, ZC3, and ZC7) exhibited two modes for both TE and TM polarizations across different molar percentages. This observation confirms the efficacy of the spray pyrolysis deposition technique in producing high-quality waveguides based on ZnO.

Локализованные акустические волны в одномерных периодически модулированных структурах

A number of one-dimensional phononic crystals, which are periodic thin-film structures of various geometries, consisting of sets of columns and metal inclusions located on a piezoelectric half-space, have been proposed and studied. The features of propagation in such structures of acoustic waves localized near the free surface and inhomogeneous inclusions have been studied. An unusual behavior of the dispersion curves for the studied localized modes was discovered. Particular attention is drawn to the so-called forbidden zones, i.e. frequency ranges in which there are no propagating localized modes. The influence of mechanical and electrical boundary conditions on the spectrum of the waves under study is discussed in detail.