We report on the structural and electrical properties of Mg ion implanted semiconductor-metal transition of vanadium dioxide thin films with three different ion fluences. The effect of introducing Mg implants showed interchange, rearrangement, and modification of atoms in the lattice structure of VO2. The (011) monoclinic signature of VO2 is significantly affected; (i) peak broadening and shift of the peak position to lower angles at 1 × 1015 ions/cm2, (ii) revert and shift towards high angles at 1 × 1016 ions/cm2 and (iii) ceasing to exist at 1 × 1017 ions/cm2 suggesting a complete devolution of the VO2 thin films at higher fluence. Composition and profiling of the V-O matrix revealed a corresponding decrease of the vanadium edge peak at 1 × 1017 ions/cm2 and a decrease of the oxygen content in implanted films. Whilst the carrier concentration is increased, the magnitude of the semiconductor-metal transition of implanted VO2 thin films is significantly affected with a decrease of career mobility. Whilst increasing ion fluence above 1 × 1017 ions/cm2 at a depth of 40 nm, the Mg implants move relatively towards the surface of VO2 resulting in the loss of the characteristic thermochromism of VO2 films.