Abstract
AbstractThe properties of VO2/TiO2:Nb heterostructures are engineered for their potential use in ultraviolet (UV) detection and observed external quantum efficiency (EQE) exceeding 100% in both near UV (405 nm) and UV‐C (254 nm) spectral regions. The proposed UV detection scheme is based on vanadium dioxide (VO2) thin films epitaxially grown on niobium doped titanium dioxide (TiO2:Nb). Such VO2/TiO2:Nb heterostructure exhibits enhanced photocurrent due to cation doping engineering in a space‐charge region thus yielding favorable conditions for hole tunneling from TiO2:Nb into VO2. The heterostructure is engineered and photocurrent is optimized by varying the VO2 film thickness, reaching up to 5000% EQE for 405 nm and up to 17 000% EQE for 254 nm light, indicating that the VO2/TiO2:Nb system can be fine‐tuned for efficient UV photodetection.
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