Absorber Layer Thickness Research Articles

Lead-free perovskite solar cell based on methyl ammonium tin iodide: Possible power conversion efficiency enhancement by device simulation

Although solar cells have the potential to create an endless amount of electrical power, their comparatively low power conversion efficiency draws the curiosity of both academics and industry. The primary goal of this research is to examine the performance of lead-free perovskite solar cells that use methyl ammonium tin iodide (CH3NH3SnI3) as the active material. The SCAPS-1D programme is employed for the simulation and analysis of the solar cells. The solar cell structure was analyzed computationally, and the resulting output was examined by comparing the I-V characteristic curves across different combinations of parameters. Various materials and combinations of parameters were explored in an effort to enhance the power conversion efficiency of solar cells based on CH3NH3SnI3. A series of comprehensive evaluations were undertaken to examine the influence of technical factors, including absorber layer thickness, defect density, and acceptor density, on performance. The acceptor density that yielded the best results was selected in order to improve the performance of the solar cell. The simulation results were acquired across a temperature range spanning from 300K to 450K, revealing enhanced stability within the range of typical ambient temperatures. The study produced encouraging findings, which included a short circuit current density of 30.81mA/cm2, an open circuit voltage of 1.25V, a fill factor of 80.35%, and a power conversion efficiency of 31.11%. This study has the potential to facilitate the development of environmentally sustainable, highly efficient, and cost-effective thin film solar cells based on CH3NH3SnI3, which exhibit noteworthy physical characteristics as alternatives to lead-containing perovskite solar cells.

Investigating inorganic perovskite as absorber materials in perovskite solar cells: machine learning analysis and optimization

This work investigates the potential of inorganic perovskites AgBiSCl2 and Al2Cu2Bi2S3Cl8 as absorber layers in perovskite solar cells, followed by the application of supervised machine learning models. Extensive exploration and optimization of device architectures FTO/SnO2/AgBiSCl2/Spiro-OMeTAD/Au and FTO/SnO2/Al2Cu2Bi2S3Cl8/Spiro-OMeTAD/Au are conducted, involving variations in absorber layer thickness (d), bulk defect density (Nt), and carrier mobility (μ n,p). The AgBiSCl2-based device achieves an optimized conversion efficiency of 10.06%, while the Al2Cu2Bi2S3Cl8-based device achieves 12.27%. To train different machine learning models, 1600 datasets are collected for each device, and Neural Networks (NN), Random Forests (RF), and XGBoost (XGB) models are employed. The performance parameters, evaluated using mean squared error (MSE) and high R-squared (R2) values, demonstrate that XGB performs the best, achieving an MSE of 0.210 and R2 of 97.1% for AgBiSCl2 and 0.671 and 90.6% for Al2Cu2Bi2S3Cl8. Additionally, the impact of each variable (d, Nt, and μ n,p) on the output is analyzed using Shapley Additive Explanations (SHAP) plots for each model. The results presented in this study pave the way for the advancement of perovskite material-based solar cells without relying on complex optoelectronic semiconducting equations and device simulators.

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015 cm−3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (ƞ) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film’s thickness. An acceptable defect density of up to 1015 cm−3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.

Efficiency Improvement of Lead‐Free La2NiMnO6‐Based Double Perovskite Solar Cells Using Numerical Simulation

In this work, the efficiency of lead‐free La2NiMnO6 (LNMO)‐based double perovskite solar cells is optimized using solar cell capacitance simulator (SCAPS‐1D). Herein, the device performance is boosted by using different combinations of electron‐transport layers, hole‐transport layers, absorber layer thickness, acceptor doping density, acceptor defect density, and bandgap tuning, and by modifying the electron affinity. To make the device more realistic, the performance of the proposed device is carefully modified in the presence of interface defect density ≈10−13 cm−3, series resistance ≈1 Ω cm2, and shunt resistance ≈6000 Ω cm2, respectively. From the findings, the optimized device exhibits a record open‐circuit voltage = 1.23 V, short‐circuit current density = 27.18 mA cm−2, fill factor = 87.14%, and power conversion efficiency = 29.20% for FTO/SnO2/LNMO/MoO3/Au configuration. Finally, the device performance is tested under different working temperatures, and 300 K is found as the best temperature for the device.

Comparative performance analysis of poly (3-hexylthiophene-2, 5-dial) and [6,6]-phenyl-C61 butyric acid methyl ester-based organic solar cells in bulk-heterojunction and bilayer structure using SCAPS

This work is concerned with the design and photovoltaic performance study of organic semiconducting materials-based solar cells using a SCAPS simulator. Organic solar cells are one form that absorbs light and produces electricity. They exhibit high power conversion efficiency, low manufacturing costs, lightweight, and flexibility which makes them a promising technology for renewable energy. We developed and designed organic solar cell devices with the structure ITO/PEDOT: PSS/P3HT: PCBM/PFN-Br/Al for bulk-heterojunction structure and ITO/PEDOT: PSS/P3HT: PCBM/PFN-Br/Al for bilayer structure where PEDOT: PSS and PFN-Br were used as hole and electron transporting layers (HTL and ETL) respectively. The short circuit current density versus voltage (J-V) characteristics as well as photovoltaic parameters namely open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE) have been examined. In addition, the quantum efficiency (QE) of the two structures has been also studied. The effectiveness of the photovoltaic simulated systems has also been attempted to be enhanced by varying the absorber layer's thickness for both architectures. Later, this turned out that variations in the band gap of the absorber layer had an impact on the factors that determined how well solar cells performed. It has been found that the simulated bulk-heterojunction device exhibits 20.43% PCE whereas 3.52% PCE has been calculated from the simulated bilayer device.

Optimization of Perovskite/Colloidal Quantum Dot Monolithic Tandem Solar Cell to Enhance Device Performance via Solar Cell Capacitance Simulator 1D

Tandem solar cells (TSCs) based on metal halide perovskites offer a route to increase power conversion efficiency (PCE). However, there are limited options for narrow‐bandgap bottom subcells. Colloidal quantum dots‐based solar cells are found attractive for this role. Herein, a cost‐effective two‐terminal (2T) monolithic TSC structure consisting of wide‐bandgap all‐inorganic perovskite top subcell and narrow‐bandgap chalcogenide PbS quantum dots bottom subcell is proposed. For optimization of the PCE of the tandem structure, standalone and tandem analysis are done in terms of variation of absorber layer thickness, total defect density, interfacial defect density, back metal contact, current density voltage (J–V) curves, external quantum efficiency, current matching, and tandem photovoltaic parameters. Optimized TSCs designed with the 530 nm/450 nm‐thick absorber layers of top/bottom sub cells result in of 19.28 mA cm−2, of 1.89 V, and PCE of 27.32%. It is found that performance of the device is very sensitive to the total defect density of the bottom subcell. Therefore, high PCE can be obtained by controlling the total defect density of the bottom subcell. This work motivates the experimental realization of low‐cost, high‐efficiency TSCs for further research.

Aging CsPbBr3 Nanocrystal Wafer for Ultralow Ionic Migration and Environmental Stability for Direct X-ray Detection.

The outstanding photoelectric properties of perovskites demonstrate extreme promise for application in X-ray detection. However, the soft lattice of the perovskite results in severe ionic migration for three-dimensional materials, limiting the operation stability of perovskite X-ray detectors. Although ligand-decorated nanocrystals (NCs) exhibit significantly higher stability than three-dimensional perovskites, defects remaining on the interface of NCs could still trigger halide migration under a high bias due to the incomplete ligand decoration. Furthermore, it is still challenging to realize sufficient thickness of absorption layers based on NCs for X-ray detectors through traditional methods. Herein, we develop a centimeter-size and millimeter-thick wafer based on CsPbBr3 NCs through isostatic pressing for X-ray detectors, in which the interfacial defects of NCs are remedied by CsPb2Br5 during aging of wafer in ambient humidity. The wafer shows outstanding sensitivity (200 μC Gyair-1 cm-2) and ultralow dark current drift (1.78 × 10-8 nA cm-1 s-1 V-1 @ 400 V cm-1). Moreover, it shows storage stability with negligible performance degradation for 60 days in ambient humidity. Thus, aging perovskite NC wafers for X-ray detection holds huge potential for next-generation X-ray imaging plates.

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

In this report, we propose a polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer. We employ an Al-composition-graded AlxGa1–xN layer for achieving p-type doping feature. We have studied the light propagation in the unintentionally doped GaN (i-GaN) absorption layer with different thicknesses, and the optimized thickness is 2 μm. As a result, the photo current of 10−2 A cm−2 and the responsivity of 2.12 A W−1 can be obtained at the applied bias of 5 V. In our fabricated device, during the current transport process, the photo-generated carriers are not along the device surface. Therefore, the photoconductive effect will be absent, and hence our device achieves a response speed with a rise time of 43.3 ms and a fall time of 86.4 ms.

In-Depth Analysis on the Fabry-Perot Effect of Cs2AgBiBr6 Double Perovskite-Based Solar Cells via Optical Path Length Modulation

Herein, the Fabry-Perot (F-P) interference of cesium silver bismuth bromide (Cs2AgBiBr6) double perovskite solar cells has been analyzed by modulating the optical path length of each layer step by step using the finite-difference time-domain (FDTD) method. The study was performed pass through three main steps. In step 1, for the fluorine-doped tin oxide (FTO)/Cs2AgBiBr6 double perovskite/gold (Au) architecture, we increased the absorption layer thickness from 150 to 600 nm at intervals of 150 nm and then predicted the optical performance including the absorption and reflection. In step 2, titanium dioxide (TiO2) layer was added between FTO electrode and Cs2AgBiBr6 double perovskite and then scaled from 20 to 200 nm at intervals of 20 nm. In the analysis process, short-circuit current density (Jsc) repeatedly fell and rose as the TiO2 layer thickness increased, and when TiO2 layer thickness is 100 nm, Jsc showed the highest value of 13.91 mA/cm2. In step 3, by applying a spiro-OMeTAD layer between the Cs2AgBiBr6 double perovskite absorption layer and Au electrode, the Jsc showed a continuous increase with slight decrease as the spiro-OMeTAD layer thickness increased from 110 to 200 nm, and when the spiro-OMeTAD layer thickness was 200 nm, Jscwas calculated as 14.57 mA/cm2, which is the highest value in the range. In the case of the optimal condition of full structure device, the Fabry-Perot resonance peaks were discovered at 477, 520, 572, 659, and 778 nm five wavelength regions, and the influence of the Fabry-Perot resonance on the generation rate inside the absorption layer on the 520, 572, and 659 nm monochromatic wavelength light was analyzed according to the position in the device. Our study approaches the Cs2AgBiBr6 double perovskite solar cell from an F-P cavity perspective and shows the light trapping phenomenon of the device according to the optical path length modulation.

Design of uni-traveling-carrier photodiode with nanoscale optical microstructures

In this article, we report an uni-traveling-carrier photodiode (UTC-PD) incorporating nanoscale optical microstructures. We have designed a UTC-PD incorporating a core-cladding confinement structure, which incorporates internal optical scattering structures to convert incident light from vertical incidence to lateral propagation, and to as much as possible confine light within the absorption layer of the UTC-PD. In this way, the proposed UTC-PD can have an operating performance like that of a waveguide-type PD under vertical light incidence, and its responsivity will increase. The ideal responsivity of the designed UTC-PD with an absorption layer thickness of 200 nm after optimization can reach 0.43 A/W, which is 48 % higher than that of the traditional structure.

Rear Surface Passivation for Ink‐Based, Submicron CuIn(S, Se)2 Solar Cells

AbstractA N, N‐dimethylformamide and thiourea‐based route is developed to fabricate submicron (0.55 and 0.75 µm) thick CuIn(S,Se)2 (CISSe) thin films for photovoltaic applications, addressing challenges of material usage, throughput, and manufacturing costs. However, reducing the absorber film thickness below 1 µm in a regular CISSe solar cell decreases the device efficiency due to losses at the highly‐recombinative, and mediocre‐reflective Mo/CISSe rear interface. For the first time, to mitigate the rear recombination losses, a novel rear contacting structure involving a surface passivation layer and point contact openings is developed for solution processed CISSe films and demonstrated in tangible devices. An atomic layer deposited Al2O3 film is employed to passivate the Mo/CISSe rear surface while precipitates formed via chemical bath deposition of CdS are used to generate nanosized point openings. Consequently, Al2O3 passivated CISSe solar cells show an increase in the open‐circuit voltage (VOC) and short‐circuit current density when compared to reference cells with equivalent absorber thicknesses. Notably, a VOC increase of 59 mV contributes to active area efficiencies of 14.2% for rear passivated devices with 0.75 µm thick absorber layers, the highest reported value for submicron‐based solution processed, low bandgap CISSe solar cells.

Utilizing machine learning to enhance performance of thin-film solar cells based on Sb2(S x Se1-x )3: investigating the influence of material properties.

Antimony chalcogenides (Sb2(S x Se1-x )3) have drawn attention as a potential semiconducting substance for heterojunction photovoltaic (PV) devices due to the remarkable optoelectronic properties and wide range of bandgaps spanning from 1.1 to 1.7 eV. In this investigation, SCAPS-1D simulation software is employed to design an earth abundant, non-toxic, and cost-effective antimony sulfide-selenide (Sb2(S,Se)3)-based thin-film solar cell (TFSC), where tungsten disulfide (WS2) and cuprous oxide (Cu2O) are used as an electron transport layer (ETL) and hole transport layer (HTL), respectively. The PV performance parameters such as power conversion efficiency, open-circuit voltage (V oc), short-circuit current (J sc), and fill factor (FF) are assessed through adjustments in material properties including thickness, acceptor concentration, bulk defect density of the absorber, defect state of absorber/ETL and HTL/absorber interfaces, operating temperature, work function of the rear electrode, and cell resistances. This analysis aims to validate their collective impact on the overall efficiency of the designed Ni/Cu2O/Sb2(S,Se)3/WS2/FTO/Al TFSC. The optimized physical parameters for the Sb2(S,Se)3 TFSC lead to impressive PV outputs with an efficiency of 30.18%, V oc of 1.02 V, J sc of 33.65 mA cm-2, and FF of 87.59%. Furthermore, an artificial neural network (ANN) machine learning (ML) algorithm predicts the optimal PCE by considering five semiconductor parameters: absorber layer thickness, bandgap, electron affinity, electron mobility, and hole mobility. This model, which has an approximate correlation coefficient (R 2) of 0.999, is able to predict the data with precision. This numerical analysis provides valuable data for the fabrication of an environmentally friendly, economical, and incredibly non-toxic efficient heterojunction TFSC.

Effect of Absorber Layer Thickness on the Preformance of the Perovskite Solar Cell in SCAPS-1D

Effect of Absorber Layer Thickness on the Preformance of the Perovskite Solar Cell in SCAPS-1D

SCAPS-1D Modeling of Hydrogenated Lead-Free Cs2AgBiBr6 Double Perovskite Solar Cells with a Remarkable Efficiency of 26.3.

In this investigation, we employ a numerical simulation approach to model a hydrogenated lead-free Cs2AgBiBr6 double perovskite solar cell with a p-i-n inverted structure, utilizing SCAPS-1D. Contrary to traditional lead-based perovskite solar cells, the Cs2AgBiBr6 double perovskite exhibits reduced toxicity and enhanced stability, boasting a maximum power conversion efficiency of 6.37%. Given its potential for improved environmental compatibility, achieving higher efficiency is imperative for its practical implementation in solar cells. This paper offers a comprehensive quantitative analysis of the hydrogenated lead-free Cs2AgBiBr6 double perovskite solar cell, aiming to optimize its structural parameters. Our exploration involves an in-depth investigation of various electron transport layer materials to augment efficiency. Variables that affect the photovoltaic efficiency of the perovskite solar cell are closely examined, including the absorber layer's thickness and doping concentration, the hole transport layer, and the absorber defect density. We also investigate the impact of the doping concentration of the electron transport layer and the energy level alignment between the absorber and the interface on the photovoltaic output of the cell. After careful consideration, zinc oxide is chosen to serve as the electron transport layer. This optimized configuration surpasses the original structure by over four times, resulting in an impressive power conversion efficiency of 26.3%, an open-circuit voltage of 1.278 V, a fill factor of 88.21%, and a short-circuit current density of 23.30 mA.cm-2. This study highlights the critical role that numerical simulations play in improving the chances of commercializing Cs2AgBiBr6 double perovskite solar cells through increased structural optimization and efficiency.

Photovoltaic performance enhancement of Al/ZnO:Al/i-ZnO/CdS /CIGS/Pt solar cell using SCAPS-1D software

The high-performance Cu(In,Ga)Se2 (CIGS) absorber layer is simulated by the SCAPS-1D software. A CIGS absorber layer, a cadmium sulfide (CdS) buffer layer, intrinsic zinc oxide (i:ZnO), and aluminum-doped zinc oxide (Al:ZnO), also known as transparent conductive oxide (TCO), are all included in the cell structure. These layers are connected to upper/top and back contacts made of aluminum (Al) and platinum (Pt). All optimizations employed in cell structure have a thin layer of Al/ZnO:Al/i-ZnO/CdS/CIGS/Pt. The open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and efficiency (η) were all investigated in this study, along with the effects of back contact, absorber and buffer layer thickness, the absorber layer's acceptor density, the buffer layer's donor density, the absorber and buffer layer's defect densities, performance of interface defect density, series and shunt resistance, and temperature. To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1018 cm−3, while maintaining defect densities at 1014 cm−3. These desired densities can be attained by using a window layer thickness of 200 nm, a buffer layer thickness of 40 nm, and an absorber layer thickness of 2500 nm. The optimized model demonstrates photovoltaic (PV) performance characteristics of 0.8975 V for VOC, 34.245732 mA/cm2 for JSC, 86.81% for FF, and 26.68% for power conversion efficiency (PCE) under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of 98.86% at visible wavelengths.

High-performance and selective semi-transparent perovskite solar cells using 3D-structured FTO

Perovskite solar cells (PSCs) have been in the spotlight as a promising next-generation solar cell. With the tremendous development of power conversion efficiency (PCE) over the past decades, a considerable amount of research has focused on semi-transparent perovskite solar cells for applications. However, the short-circuit current density (JSC) greatly decreases in semi-transparent PSCs with an increase in transmittance, and this results in a significant decrease in PCE. In this study, semi-transparent PSCs were fabricated by controlling the absorption layer thickness and aperture ratio using a 3D-structured FTO manufactured via processes that can work large areas (direct printing and mist-CVD). This strategy has an advantage in that the aperture ratio (transmission/entire area) can be controlled easily by adjusting pattern specification. The effect of a 3D-structured FTO enhanced the diffuse transmittance and shortened the carrier travel distance; further, it minimized the decrease in PCE because of an increase in transmittance. Our fully semi-transparent PSCs (F–PSCs) with the ITO cathode achieved a PCE of 12.0 %–14.6 %, and an average visible transmittance (AVT) of 13.4 %–17.0 %. These results demonstrate that the parameter of semi-transparent PSCs (transmittance and PCE) can be easily tailored to the application by controlling the specification of the pattern.

Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure

This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN2/Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN2/Cds) and 7.17 % (ZnSnN2/Si). In addition to high efficiency, the ZnSnN2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology.

Hole Transporting Bilayers for Efficient Micrometer‐Thick Perovskite Solar Cells

AbstractAchieving high efficiencies in halide perovskite solar cells with thicknesses >1 µm is necessary for developing perovskite‐Si tandem cells based on small pyramidal structures. To achieve this goal, not only is the perovskite layer quality to be optimized but also the properties of the charge‐transport layers must be tuned to reduce charge‐collection losses. The transport layers provide a non‐ohmic resistance that modulates the Fermi‐level splitting inside the perovskite absorber. The finite conductivity of the transport layers can lead to losses in the fill factor (FF) and short‐circuit current, even at infinite charge‐carrier mobility in the absorber layer. These losses notably scale with the absorber layer thickness, which implies that higher‐conductivity transport layers are required for thicker perovskite absorbers. One strategy to improve charge collection and thereby FFs in thick inverted perovskite solar cells is to use bilayers of hole‐transport layers. In this study, the combination of poly[bis(4‐phenyl) (2,4,6‐trimethylphenyl)amine] with self‐assembled monolayers provides the best photovoltaic performance in single‐junction devices.

Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6Based Double Perovskite Solar Cells

AbstractPerovskite solar cells, a third‐generation photovoltaic technology, have recently emerged as a game‐changing innovation. However, lead (Pb) is a toxic heavy metal, and it is crucial to explore lead‐free perovskite solar cells with continuously improving efficiency for long‐term development. Recently, materials researchers have discovered a lead‐free double perovskite solar cell material, Cs2InBiBr6with a small direct bandgap of 1.27 eV and strong thermodynamic and mechanical structural stability. The power conversion efficiency of Cs2InBiBr6‐based perovskite solar cells is not reported yet. To investigate its potential, a solar cell capacitance simulator to analyze the solar cell structure of FTO (Fluorine Doped Tin Oxide)/ETL (Electron Transport Layer)/Cs2InBiBr6/HTL (Hole Transport Layer)/Au, selecting appropriate hole transport materials and electron transmission materials to achieve high efficiency is used. Moreover, this study explores the impact of several factors, including absorber layer thickness, acceptor and donor doping density, and the influence of total defect density of the perovskite and interface layers on the performance of solar cells. Advanced device characterization methods such as Mott‐Schottky analysis are performed to unravel the effect of interfaces on the device performance. The solar cell with the device structure FTO/TiO2/Cs2InBiBr6/Cu2O/Au achieves an outstanding PCE of 23.64% demonstrating the immense potential of Cs2InBiBr6as a lead‐free double perovskite solar cell absorber layer.

MnFe2O4/polyaniline/diatomite composite with multiple loss mechanisms towards broadband absorption.

The research and development of absorbing materials with high absorbing capacity, wide effective absorption bandwidth, and lightweight has always been interesting. In this research, a facile hydrothermal method was used to prepare MnFe2O4, and the grain size of MnFe2O4 decreased with increasing hydrothermal temperature. When the size of MnFe2O4 nanoparticles is less than 10nm, its quantum size effect and surface effect make its electromagnetic microwave absorption performance greatly optimized. When the thickness of MnFe2O4-110 °C is 2.57mm, the minimum reflection loss (RLmin) is -35.28 dB. Based on this, light porous diatomite and a three-dimensional polyaniline network are introduced. Diatomite is used as the base material to effectively reduce the agglomeration of MnFe2O4 quantum dots. The relatively high surface area introduced by a three-dimensional network of polyaniline promotes the orientation, interfacial polarization, multiple relaxation, and impedance matching, thereby generating further dielectric loss. Additionally, the magnetic properties of manganese ferrite and the strong electrical conductivity of polyaniline play an appropriate complementary role in electromagnetic wave absorption. The RLmin of MnFe2O4/PANI/diatomite is -56.70 dB at 11.12GHz with an absorber layer thickness of 2.57mm. The effective frequency bandwidth (RL < -10 dB) ranges from 9.21 to 18.00GHz. The absorption mechanism indicates that the high absorption intensity is the result of the synergistic effect of impedance matching, conduction losses, polarization losses, and magnetic losses.