Abstract
This study aims to investigate the different optical properties of the ZnSnN2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN2/Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN2/Cds) and 7.17 % (ZnSnN2/Si). In addition to high efficiency, the ZnSnN2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology.
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