Thermal Chemical Vapor Deposition Research Articles

Stress Relaxation in SGOI Structure Obtained by Condensation

The development of effective buffer layer has required years of work in order to obtain relaxed SiGe substrates [1]. However, main drawback of this approach relies on the presence of embedded and numerous dislocations which can be detrimental for optimal applications. Recently, a surprising relaxation phenomenon has been observed on specific Silicon-Germanium On Insulator (SGOI) structures [4-5].It has been observed that when the sample is heated, slippage is observed at the SGOI/Buried Oxide (BOX) interface.The phenomenon is not clearly understood. However, several explanations have been raised. It can be explained by the mechanical properties by Ge-O bonds which are weaker than the Si-O bonds at the SGOI/BOX interface causing the slip. [2] Also, the Ge atoms in the last crystalline layer at the BOX interface decreases the quantity of Si atoms inducing less bonds between the Si atoms of SGOI and the BOX.We suggest to take advantage of this phenomenon to obtain fully relaxed SGOI layers without dislocations. This new approach would allow to create high performance relaxed SGOI layers in industrial conditions with 300 mm wafers. This innovation is relevant for several applications, such as optical applications and the formation of base substrate to generate tensile Si epitaxy layer. It has to be noticed that any Ge concentration until pure GeOI structure is possible.Figure 1 shows the different process steps to obtain relaxed SGOI layer explained below. SiGe epitaxy (fig.1-a) is performed on an 300mm SOI wafer by Rapid Thermal Chemical Vapor Deposition (RT-CVD). Germane (GeH4) and Dichlorosilane (DCS) are used as precursor gases to obtain a 20nm thick fully strained Si0.8Ge0.2 layer. Upstream work is performed to improve the uniformity of the SiGe layer (thickness and composition) within the 300mm wafer. Indeed, they are key parameters impacting Ge concentration within wafer uniformity obtained after condensation.[3]Then, condensation is performed (fig.1-b) using thermal oxidation in a 300mm industrial furnace under N2/O2 atmosphere at 1000°C during several hours. Condensation is tuned to obtain the desired Ge concentration in the SGOI structure. Condensation allows to transform a SiGe/Si/BOX structure into SiGe/BOX structure called SGOI. Two mechanisms are involved in the condensation. The first mechanism is the Si-selective oxidation in the SiGe layer allowing Ge atoms to accumulate at the oxidation interface. The second mechanism is the Ge diffusion in the structure which allows SiGe inter-diffusion. The Ge atoms are maintained and homogenized in depth of the SGOI layer during the interdiffusion mechanism thanks to the BOX acting as a diffusion barrier. [2]During this work, the layer composition, the thickness as well as the stress were characterized by ellipsometry, XRR, XRD and SIMS. In addition, the surface was analyzed by AFM to detect any crystal defects.In this study, we propose to investigate the relaxation of SGOI layer with a concentration of Ge=50% because such structure shows no defects after condensation [2]. Thereafter, it will be possible to carry out GeOI in the future.Figure 2 shows SiGe thickness and density measurement by XRR. A thickness variation of 13.67 A and a density variation of 0.22g/cm3 of the SGOI layer after condensation on the whole wafer is obtained. The average density is 4,31g/cm3 with a concentration of %Ge=51% which was our target concentration.Then, the relaxation phenomenon is studied using anneals in the temperature range [700;900] °C during several hours. Indeed, we chose a temperature close to the SiO2 viscosity temperature and a long annealing time allowing to generate a slow slip thus limiting defects.Figure 3 shows a RSM map obtained by XRD of an Si0.5Ge0.5OI layer after annealing at 800°C for 2h. The mapping shows Si substrate as well as the layer relaxed along the (113) and (224) planes at an angle Φ=45°. RSM map allows to calculate the relaxation rate which is 22%. The relaxation on the sample is a success that remains to be improved by annealing time or temperatures to be optimized.This new approach would allow the realization a defect free relaxed SGOI layer under industrial conditions on a 300mm wafer. It would provide a new method for applications such as optical or the growth of tensile Si channels.[1] P.M.Mooney, Materials Science and Engineering, 1996[2] F.Roze. PhD thesis, 2018[3] D.Valenducq, PhD thesis, 2021[4] V.Boureau et al., ECS, 2018[5] Usuda, Koji, et al., Solid-State Electronics, 2013 Figure 1

3D porous graphene/double-walled carbon nanotubes/gold nanoparticles hybrid film for modifying electrochemical electrode

3D porous graphene/carbon nanotubes (Gr/CNTs) hybrid films containing nanoparticles have introduced new possibilities for the development of high-performance electrochemical sensors. Herein, we developed a novel technique for the fabrication of 3D porous graphene/double-walled carbon nanotubes/gold nanoparticles (Gr/DWCNTs/AuNPs) hybrid film on copper foils by using the thermal chemical vapor deposition (CVD) method. On these porous films, DWCNTs, Gr winkles, and a homogeneous AuNP covering were observed. These prepared 3D porous films were then transferred onto the surface of screen-printed electrodes (SPE) to investigate the electrochemical properties by using cyclic voltammetry (CV) technique. Consequently, 3D porous Gr/DWCNTs/AuNPs film modified electrodes exhibited good electrochemical characteristics with an active surface area of 2.76 times higher than that of Gr/DWCNTs film. This is due to the use of AuNPs, which improves the conductivity and surface area of the porous film.

Synthesis and Characterization of Silica–Tantala Microporous Membranes for Gas Separations Fabricated Using Chemical Vapor Deposition

Composite membranes consisting of microporous tantalum-doped silica layers supported on mesoporous alumina substrates were fabricated using chemical vapor deposition (CVD) in both thermal decomposition and counter-flow oxidative deposition modes. Tetraethyl orthosilicate (TEOS) was used as the silica precursor and tantalum (V) ethoxide (TaEO) as the tantalum source. Amounts of TaEO from 0 mol% to 40 mol% were used in the CVD gas mixture and high H2 permeances above 10−7 mol m−2 s−1 Pa−1 were obtained for all conditions. Close examination was made of the H2/CH4 and O2/CH4 selectivities due to the potential use of these membranes in methane reforming or partial oxidation of methane applications. Increasing deposition temperature correlated with increasing H2/CH4 selectivity at the expense of O2/CH4 selectivity, suggesting a need to optimize membrane synthesis for a specific selectivity. Measured at 400 °C, the highest H2/CH4 selectivity of 530 resulted from thermal CVD at 650 °C, whereas the highest O2/CH4 selectivity of 6 resulted from thermal CVD at 600 °C. The analysis of the membranes attempted by elemental analysis, X-ray photoelectron spectroscopy, and X-ray absorption near-edge spectroscopy revealed that Ta was undetectable because of instrumental limitations. However, the physical properties of the membranes indicated that the Ta must have been present at least at dopant levels. It was found that the pore size of the resultant membranes increased from 0.35 nm for pure Si to 0.37 nm for a membrane prepared with 40 mol% Ta. Similarly, an increase in Ta in the feed resulted in an increase in O2/CH4 selectivity at the expense of H2/CH4 selectivity. Additionally, it resulted in a decrease in hydrothermal stability, with the membranes prepared with higher Ta suffering greater permeance and selectivity declines during 96 h of exposure to 16 mol% H2O in Ar at 650 °C.

Growth of silicon carbide multilayers with varying preferred growth orientation

SiC multilayer coatings were deposited via thermal chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and various hydrocarbons under identical growth conditions, i.e. at 1100 °C and 10 kPa. The coatings consisted of layers whose preferred growth orientation alternated between random and highly 〈111〉-oriented. The randomly oriented layers were prepared with either methane (CH4) or ethylene (C2H4) as carbon precursor, whereas the highly 〈111〉-oriented layers were grown utilizing toluene (C7H8) as carbon precursor. In this work, we demonstrated how to fabricate multilayer coatings with different growth orientations by merely switching between hydrocarbons. Moreover, the success in depositing multilayer coatings on both flat and structured graphite substrates has strengthened the assumption proposed in our previous study that the growth of highly 〈111〉-oriented SiC coatings using C7H8 was primarily driven by chemical surface reactions.

Effect of Evaporation Boat-Substrate Distance on the Formation of Zinc Oxide Nanostructures

Zinc Oxide (ZnO) is one of the important semiconductor materials which contribute effectively to the development of the semiconductor industry technology. ZnO nanostructures (NSs) were synthesized using thermal chemical vapor deposition (TCVD) technique under atmospheric pressure at different evaporation boat-substrate distances. ZnO NSs were prepared by oxidizing Znic acetate dihydrate powder within quartz tube instead of its outside. The effect of change evaporation boat-substrate distance (2.5, 4.5, 6.5 and 8.5 cm) on the optical and structural properties of ZnO NSs were studied. ZnO NSs were characterized by UV-Visible spectrophotometer, X-ray diffraction (XRD) technique and photoluminescence (PL) spectroscopy to evaluate its optical and structural properties. Optical band gap measurement results exhibited a red-shifted from (3.25 eV) to (3.05 eV), as the separation distance increased from (2.5 cm) to (8.5 cm), respectively. XRD technique confirms that metal oxide was ZnO and having hexagonal structure. The average crystallite size of the samples was decreased from 63.4 to 58.3 nm, with the increase in separation distance from 2.5 to 8.5 cm. Also, the sharpness, strong intensity and narrow width of dominant diffraction peak indicate the high crystallinity of the prepared ZnO NSs. The PL spectra of the ZnO NSs revealed a wide deep-level emission for all the prepared samples. ZnO NSs grown by TCVD technique may provide potential applications in nano-photovoltaics and nano-photodetectors.

Development of electrochemical sensor based on polyalanine/CuCl-Gr/DWCNTs for highly sensitive detection of glyphosate

In this study, a hybrid film based on copper chloride doped graphene/double-walled carbon nanotubes (CuCl-Gr/DWCNTs) was prepared for further application in detection of glyphosate (Gly) at low levels. Gr/DWCNTs film was first fabricated on copper foil and then modified with CuCl using thermal chemical vapor deposition (CVD) technique, before being transferred onto gold screen printed electrode (AuE). An ad-layer polyalanine (PolyA) was introduced on the top of CuCl-Gr/DWCNTs hybrid film by direct electro-deposition from alanine monomer in order to facilitate immobilization of enzyme molecules. The as-prepared PolyA/CuCl-Gr/DWCNT film was finally used for developing Gly electrochemical sensor based on inhibition of Gly towards urease enzyme. The developed Gly sensor showed a high sensitivity of 1383 (μA.ppb−1.cm−2) and a low detection limit (LOD) of 0.54 × 10−3 ppb in a wide concentration range of 10−3 ppb - 50 ppb. Moreover, the sensor was also applied to the detection of Gly in river water samples, with recoveries ranging from 112.8 % to 113.9 % (RSD: 1.54–2.03 %). The results suggested that the developed sensor with high sensitivity can be used for the detection of Gly in water sources.

Conversion of Carbon Dioxide into Chemical Vapor Deposited Graphene with Controllable Number of Layers via Hydrogen Plasma Pre-Treatment.

In this work, we report the conversion of carbon dioxide (CO2) gas into graphene on copper foil by using a thermal chemical vapor deposition (CVD) method assisted by hydrogen (H2) plasma pre-treatment. The synthesized graphene has been characterized by Raman spectroscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results show the controllable number of layers (two to six layers) of high-quality graphene by adjusting H2 plasma pre-treatment powers (100–400 W). The number of layers is reduced with increasing H2 plasma pre-treatment powers due to the direct modification of metal catalyst surfaces. Bilayer graphene can be well grown with H2 plasma pre-treatment powers of 400 W while few-layer graphene has been successfully formed under H2 plasma pre-treatment powers ranging from 100 to 300 W. The formation mechanism is highlighted.

Synchrotron EXAFS spectroscopy and density functional theory studies of Pd/MoS2 Schottky-type nano/hetero-junctions

Molybdenum disulfide (MoS2) nanostructures are grown on the silicon substrates using thermal chemical vapor deposition and then Pd anchoring on them is carried out by DC magnetron sputtering to form Pd/MoS2 Schottky-type nano/hetero-junctions. Extended X-ray absorption fine structure (EXAFS) spectroscopy is applied to study the local structure around the molybdenum K-edge. In this way, the kind, coordination number, and distance of neighbors of absorber atom are determined. Moreover, structural analysis has been performed by X-ray diffraction. Optical studies are conducted by UV–Visible and differential reflectance spectroscopy. The electronic properties of the samples are examined using Raman spectroscopy with an excitation laser at 532 nm. Furthermore, the surface chemical analysis is monitored by X-ray photoelectronspectroscopy. In addition, a simulation study of the structural and electronical properties of the samples is carried out to understand the effect of Pd adding on MoS2 structure using Quantum ESPRESSO software. The reasonable place of the Pd atom after Pd anchoring in MoS2 lattice is obtained.

Multi-layer growth of tungsten disulphide using thermal chemical vapour deposition

Transition metal dichalcogenides, in their 2D form are proven to be significant material for next-generation nanoelectronic and optoelectronic devices. However, for the realization of practical applications, it is very important to devise facile, and cost-effective synthesis routes without compromising their quality. In this work, multi-layer 2D tungsten disulphide (WS2) has been synthesized using thermal assisted chemical vapour deposition technique. The synthesis was carried out using two different substrates, and the effect of relative position of tungsten trioxide powder and substrate on the multi-layer growth of WS2 has been studied. The nucleation density and layer number is observed to be varying with the reaction time and the type of the substrate. The as-synthesized samples were characterized by using field emission scanning electron microscopy, and Raman spectroscopy.

Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane

In this paper, a methodology for silicon carbide (SiC) film formation by ion beam induced chemical vapor deposition (IBICVD) using dimethylsilane (DMS) is presented. Both pure DMS gas and Ar+ ion beam were simultaneously injected to a Si substrate. The Ar+ ion energy was 100 eV. The Si substrate temperature was 400, 600, or 800 °C. The duration of each ion beam injection experiment was 10 h. When the substrate temperature was 400 °C, no film formation occurred by the IBICVD experiment. In the case of 600 °C, a film was found to be formed on the substrate by the injection of both DMS gas and Ar+ ion beam. Although Fourier transform infrared (FTIR) spectroscopy measurement of the film showed that the film consisted of SiC, the film thickness was not enough to analyze the film characteristics further. When the Si substrate was set at 800 °C, a film was formed on the substrate by IBICVD. FTIR, X-ray diffraction, and X-ray photoelectron spectroscopy (XPS) measurements of the film showed the occurrence of SiC deposition. The XPS measurement also showed that the atomic concentration ratio of carbon to silicon (C/Si ratio) of the film was 1.36. Therefore, excessive C atoms were incorporated to the deposited films. On the contrary, the C/Si ratio of a SiC film prepared by the thermal CVD method using DMS was 1.88. These results suggest that the Ar+ ion beam induced chemical vapor deposition using DMS is useful for reducing of the amount of C atoms to be excessively included in the film.

Size-controllable synthesis of 2D Mn3O4 triangular-shaped nanosheets by thermal chemical vapor deposition

In this study, monolayer up to few-layer of Mn 3 O 4 nanosheets grown on c-Si (111) substrates using a thermal chemical vapor deposition (TCVD) technique were investigated in detail, where the growth reaction pressure was varied from 0.12 to 0.72 mbar. The morphology of the triangular-shaped Mn 3 O 4 nanosheet greatly depends on the atomic ratio of O to Mn, which eventually determines the horizontal growth rate of the triangle's edges that forms the shape of the nanosheet. A low O/Mn ratio results in the formation of a triangle with a longer edge as compared to a high O/Mn ratio which produces a shorter edge. The 2D triangular-shaped Mn 3 O 4 nanosheets prepared at 0.42 mbar exhibited a thickness of ∼1.10–2.29 nm (equivalent to the approximate thickness of monolayer-bilayer) with a maximum edge length of ∼850 nm, whereas ultrathin nanosheets with a thickness of ∼1.93–4.68 nm (equivalent to ∼2–3 layers) with an edge length of <250 nm were found at the highest reaction pressure of 0.72 mbar. The results imply a synthesis of 2D Mn 3 O 4 nanosheets with controllability of thickness and edge length that vary from monolayer to ultrathin nanosheets at different O/Mn ratios. By presuming that the Mn 3 O 4 growth along the [001] direction, we performed first-principles density-functional theory calculations to validate the structure and electronic properties of these 2D Mn 3 O 4 nanosheets. Our calculated lattice parameters for the 2D Mn 3 O 4 were considerably close to the experimental measurements. The band structure calculations predicted that the 2D Mn 3 O 4 possessed metallic characteristics. This paper discusses the seed-assisted growth mechanism of these 2D Mn 3 O 4 nanosheets. • Thermal CVD grown Mn 3 O 4 nanosheet. • The atomic ratio between O and Mn controlled the morphologies of the triangular-shaped Mn 3 O 4 nanosheet. • A low O/Mn ratio produced monolayer 2D triangular shaped with a longer edge. • A high O/Mn ratio produced ultrathin nanosheets with thickness up to 3 layers and shorter edge. • Based on DFT calculations, 2D Mn 3 O 4 nanosheet exhibited metallic characteristics.

Characterization of High-Performance Zinc Chloride Activated Biochar Modified by Thermal Chemical Vapor Deposition (CVD) and Its Removal Mechanism of Aqueous Nitrate Ions

Characterization of High-Performance Zinc Chloride Activated Biochar Modified by Thermal Chemical Vapor Deposition (CVD) and Its Removal Mechanism of Aqueous Nitrate Ions

Highly Water-Repellent and Anti-Reflective Glass Based on a Hierarchical Nanoporous Layer

Optically anti-reflective and water-repellent glass is required for solar cell covers to improve power-generation efficiency due to transparency improvement and dirt removal. Research has been conducted in recent years on technologies that do not use fluorine materials. In this study, we focused on the anti-reflective properties and microstructure of hierarchical nanoporous layer (HNL) glass and used it as a substrate. As a result, we have achieved both strong anti-reflectivity and high water repellency on HNL glass by coating polydimethylsiloxane (PDMS) using baking and thermal chemical vapor deposition (CVD). The surfaces showed a significantly higher sliding velocity of water droplets than the PDMS-treated material on the flat glass plate. They also showed such water repellency that the droplets bounced off the surface.

Low temperature synthesis of MoS2 and MoO3:MoS2 hybrid thin films via the use of an original hybrid sulfidation technique

In this study, an original hybrid technique based on rapid thermal annealing (RTA) and chemical vapor deposition (CVD) was used to synthesis MoS2 and MoO3:MoS2 hybrid thin films at low temperature on indium tin oxide (ITO). We show that using the annealing temperature, the annealing duration and the sulfur partial pressure as parameters, it is possible to switch from MoO3 (20–25 nm) to MoS2 directly without any intermediate compositions. The XPS analysis revealed a complete sulfidation at 380 °C without any deterioration of the ITO conductivity. Then, we synthesized thinner hybrid films (3nm) of MoO3:MoS2 in order to be used as anode buffer layer (ABL) in planar organic solar cells (PHJ-OPVs). We have demonstrated that the hybrid ABLs that appear best suited for use in PHJ-OPVs are those with high MoO3/MoS2 molecular ratio which have been treated around 210 °C. The introduction of the hybrid ABL with 5% of MoS2 in the PHJ-OPVs based Aluminum Phthalocyanine Chloride and Fullerene leads to a significant improvement of the OPV efficiency from 1.29% to 2.49%, this was explained by the complimentary advantages of MoO3 and MoS2.

Non-linear thermo-optical properties of WS2 and Au/WS2 Schottky-type nano/hetero-junctions

Tungsten disulfide (WS2) nanoflakes are synthesized by thermal chemical vapor deposition on a Si/SiO2 substrate. Subsequently, WS2 is anchored by Au nanostructures to form Au/WS2 Schottky-type nano/hetero-junctions (Au/WS2 NHs), in various gold molar ratios of 1% and 10%, using DC magnetron sputtering. The crystalline structure, surface morphology and optical properties of the samples are investigated by X-ray diffraction, field emission scanning electron microscopy, UV–visible and Raman spectroscopy, respectively. UV–visible spectra reveal the reduction of absorption rate in terms of Au abundance. According to Raman spectra, there is a notable red shifting for A1g and E12g peaks and the elevation of A1g to E12g intensity ratio after Au anchoring. In addition, the Z-scan technique measures the corresponding nonlinear thermo-optical properties indicating a change over from self-focusing to self-defocusing modes in favor of Au/WS2 nanoflakes.

Synthesis and characterization of single‐walled carbon nanotube: Cyto‐genotoxicity in Allium cepa root tips and molecular docking studies

Herein, single-walled carbon nanotubes (SWCNTs) were synthesized by the thermal chemical vapor deposition (CVD) method, and characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), Raman spectroscopy, dynamic light scattering (DLS), and thermo-gravimetric analysis (TGA). The results indicated that obtained nanotubes were SWCNTs with high crystallinity and their average diameter was 10.15 ± 3nm. Allium cepa ana-telophase and comet assays on the root meristem were employed to evaluate the cytotoxic and genotoxic effects of SWCNTs by examining mitotic phases, mitotic index (MI), chromosomal aberrations (CAs), and DNA damage. A. cepa root tip cells were exposed to SWCNTs at concentrations of 12.5, 25, 50, and 100 μg/ml for 4h. Distilled water and methyl methanesulfonate (MMS, 10μg/ml) were used as the negative and positive control groups, respectively. It was observed that MIs decreased statistically significantly for all applied doses. Besides, CAs such as chromosome laggards, disturbed anaphase-telophase, stickiness and bridges and also DNA damage increased in the presence of SWCNTs in a concentration-dependent manner. In the molecular docking study, the SWCNT were found to be a strong DNA major groove binder showing an energetically very favorable binding free energy of -21.27 kcal/mol. Furthermore, the SWCNT interacted effectively with the nucleotides on both strands of DNA primarily via hydrophobic π and electrostatic interactions. As a result, cytotoxic and genotoxic effects of SWCNTs in A. cepa root meristematic cells which is a reliable system for assessment of nanoparticle toxicology were demonstrated in this study.

Study on the Temperature Dependence of Three-dimensional Graphene Structure by Thermal Chemical Vapor Deposition

Study on the Temperature Dependence of Three-dimensional Graphene Structure by Thermal Chemical Vapor Deposition

熱化学気相成長（CVD）法による酸化タンタルナノ粒子の合成と光触媒水分解

熱化学気相成長（CVD）法による酸化タンタルナノ粒子の合成と光触媒水分解

Rhenium oxide/sulfide binary phase flakes decorated on nanofiber support for enhanced activation of electrochemical conversion reactions

Because of their versatile application potential, such as fuel cells and water electrolysis, boosting electrochemical half-cell reactions has been highlighted to realize energy conversion systems. However, sluggish multi-charge transfer reactions lower the energy efficiency for cell operation. Tailoring hierarchical catalyst nanostructures comprising heterogeneous crystalline phases allows for the improvement of limited activities and reaction performance. This study examines the controllable synthesis of heterogeneous rhenium oxide (ReOx) and rhenium sulfide (ReS2) nanoflakes vertically aligned on carbon nanofibers (CNFs) by thermal chemical vapor deposition (CVD). Their potential application as electrocatalysts in various electrochemical half-cell reactions for fuel cells and water electrolysis is elucidated. The phase portion of oxide and sulfide in the ReOx/ReS2 nanoflake-decorated CNF catalyst can be thermally tuned from an oxide-rich phase to a sulfide-rich phase, thereby optimizing the catalytic activities for hydrogen evolution (Eonset: −0.24 V) and oxygen reduction reactions (Eonset: 0.778 V, number of electron: 3.8), which is comparable to the performance of commercial Pt/C catalysts. The morphological and structural evolution mechanism of the ReOx/ReS2 nanoflake-decorated CNF catalyst materials is investigated using diverse material characterizations. This study suggests a synthetic method for temperature-dependent heterogeneous phase control of non-precious-metal-based hierarchical materials and offers a basis for developing efficient catalyst alternatives for application to sustainable energy conversion and storage systems.

Optimization of Growth Parameters of Thermal Chemical Vapor Deposition Method for 2D MoS2 Synthesis

Even after a decade of research on MoS2, it is still quite challenging to obtain high quality MoS2 films using a controlled synthesis technique. Out of all the available methods chemical vapor deposition (CVD) has proven to be a reliable technique to produce MoS2 thin films. The CVD growth process is sensitive to variety of parameters involved in the process. In the present work, we report the effect of pressure, temperature, gas flow, and position of substrate on the growth of MoS2 films. After several failures, the technique is optimized to synthesize high quality MoS2 films on quartz substrate. Further, the films are characterized using XRD, UV-Vis Spectroscopy, Photoluminescence Spectroscopy and Raman Spectroscopy. The main objective of this work is to formulate a method that produces MoS2 films using thermal CVD process by optimizing various parameters.