Thermal Chemical Vapor Deposition Research Articles

A novel catalyst derived from Co-ZIFs to grow N-doped carbon nanotubes for all-solid-state supercapacitors with high performance.

Carbon nanotubes (CNTs) have been widely used as electrode materials for electrochemical energy storage devices (e.g., supercapacitors) due to their excellent chemical and physical properties. However, conventional approaches (e.g., electron-beam vapor deposition and atomic layer deposition) to fabricate catalysts for the growth of CNTs are complex and demand high energy consumption. Herein, we report a facile method to synthesize catalysts derived from cobalt-containing zeolitic imidazolate frameworks (Co-ZIFs), which is exploited to in situ construct the three-dimensional (3D) CNT hybrid materials for all-solid-state supercapacitors. In brief, Co-ZIFs with a controllable structure is first grown on the inner porous surface of carbon foams pyrolyzed from commercial melamine foams, followed by thermal annealing and chemical vapor deposition to grow CNTs, achieving 3D free-standing CNT-based hybrids. The well-distributed Co-ZIFs in the carbon foam enable the grown CNTs with uniform structures and morphologies. Using the fabricated CNT-based hybrid as electrodes, the assembled all-solid-state supercapacitors show a high specific capacitance of 19.4 mF cm-2 at a current density of 0.5 mA cm-2, which could be further optimized to as high as 871.8 mF cm-2 by incorporating the pseudocapacitive material of manganese dioxide in CNT-based hybrids. This study provides a facile solution approach to fabricate the catalyst for the growth of a CNT inner porous substrate; the resultant 3D free-standing hybrids could be used as efficient electrodes for high-performance energy storage devices beyond supercapacitors.

Thermal chemical vapor deposition of layered carbon nitride films under a hydrogen gas atmosphere

The H atom occupation at the N vacancy site of layered carbon nitride films leads to an anomalous optical absorption.

Interplay between coordination sphere engineering and properties of nickel diketonate-diamine complexes as vapor phase precursors for the growth of NiO thin films.

NiO-based films and nanostructured materials have received increasing attention for a variety of technological applications. Among the possible strategies for their fabrication, atomic layer deposition (ALD) and chemical vapor deposition (CVD), featuring manifold advantages of technological interest, represent appealing molecule-to-material routes for which a rational precursor design is a critical step. In this context, the present study is focused on the coordination sphere engineering of three heteroleptic Ni(II) β-diketonate-diamine adducts of general formula [NiL2TMEDA] [L = 1,1,1-trifluoro-2,4-pentanedionate (tfa), 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate (fod) or 2,2,6,6-tetramethyl-3,5-heptanedionate (thd), and TMEDA = N,N,N',N'-tetramethylethylenediamine]. Controlled variations in the diketonate structure are pursued to investigate the influence of steric hindrance and fluorination degree on the chemico-physical characteristics of the compounds. A multi-technique investigation supported by density functional calculations highlights that all complexes are air-insensitive and monomeric and that their thermal properties and fragmentation patterns are directly dependent on functional groups in the diketonate ligands. Preliminary thermal CVD experiments demonstrate the precursors' suitability for the obtainment of NiO films endowed with flat and homogeneous surfaces, paving the way to future implementation for CVD end-uses.

Solvothermal synthesis of hair-like carbon nanotubes onto sub-micron-sized spherical metal oxide catalyst cores.

Long- and uniform-length, and high-density hair-like carbon nanotubes (CNTs) were produced by CNT growth on sub-micron-sized spherical catalyst supports. The nanosized catalysts (FeO x , CoO x , and NiO x ) that were supported in/on the sub-micron-sized spherical metal oxides (TiO2, ZrO2, SnO2, and CeO2) were prepared via one-step solvothermal and/or two-step impregnation methods. The nanosized catalysts supported in/on the spherical metal oxide supports were converted into CNT conjugates with the CNT-hair morphology via a chemical thermal vapor deposition technique using ethyne gas as a carbon source; the CNTs grew on the central spherical metal oxide core under the base growth process conditions. Among the many types of candidate spherical catalyst materials, the combination of FeO x as a catalyst for CNT growth and ZrO2 as a support led to the best growth of CNT-hair under the reaction conditions, which included a temperature of 730 °C, pressure of 65 Pa, a 10 sccm ethyne gas flow, and a reaction time of 10 s. The CNTs consisted of five-to-eight-layered multi-wall structures with lengths of approximately 3 μm. The CNT-hair that was obtained using the solvothermally embedded catalyst showed higher crystallinity and was dense, thick, and straight, while the corresponding CNT-hair obtained using the impregnated catalyst was slightly sparse, thin, and curly. A unique layer structure constructed using large quantities of uniform CNT-hair, including multiple CNT yarns similar to fuzzy balls or cotton candies, was assembled. The CNT-hair conjugate, specifically constructed in a layer structure with core FeO x /ZrO2 catalysts and tangled CNT yarns, had an appearance similar to frog eggs. Therefore, we successfully prepared suitable catalysts for CNT-hair production and fabricated a layer structure consisting of large numbers of CNT-hair conjugates. The unique structures are expected as a new metamaterial with intriguing physical properties, including isotropic absorption of polarized light and electromagnetic waves.

Nitrogen-Doped Nickel Graphene Core Shell Synthesis: Structural, Morphological, and Chemical Composition for Planar Hybrid Solar Cells Application

In this study, nitrogen-doped nickel graphene core cells (N-NiGR) are synthesized using the thermal chemical vapor deposition method. The structural, morphological, and chemical composition properties of N-NiGR are investigated using X-ray diffractometry (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS), respectively. N-NiGR has shown potential as a material that can assist charge carrier transportation in the photoactive a layer of planar hybrid solar cell (PHSC) owing to its high charge carrier mobility and stability with the solution process. Here, we investigated for the first time an enhancement of the solar cell efficiency (by up to a 2% increase) in PHSCs by incorporating the charge selective N-NiGR into the device’s photoactive layer. Synthesized N-NiGR with different concentrations are incorporated into the active layer of the devices as charge transport material. The device structure of an ITO-coated glass/Hole transport layer/(PBT7+N-NiGR+SnS)/Electron transport layer/Cathode is fabricated and the maximum power conversion efficiency of the device was observed to be about 4.35%.

Growth Mechanism of High-Quality hBN Monolayers on Cu through Chemical Vapor Deposition with Inductively Coupled Plasma

The growth mechanism associated with the nucleation and growth kinetics of hexagonal boron nitride (hBN) on Cu through chemical vapor deposition (CVD) has been studied. A fully covered hBN film with a large grain size has been obtained by lowering the density of the grain boundary during the thermal CVD. The Cu substrate is first annealed under the H2 ambiance in order to efficiently reduce the copper oxide on the surface and promote the Cu surface with the (111) plane. Next, the nucleation and growth kinetics of CVD hBN are investigated by the analysis of scanning electron microscopy (SEM) images and the Johnson–Mehl–Avrami–Kolmogorov model. The hBN growth is overall dominated by nucleation under a low flow rate of H2, while it is initially dominated by grain growth under a high flow rate of H2 and the grain size of hBN can be larger than 25 μm. The competition between nucleation and grain growth is reversed at higher temperatures, resulting from the wavier Cu surface. Furthermore, the hBN film is grown by the inductively coupled plasma-enhanced CVD (ICP-CVD) and its growth mechanism is compared with that of CVD hBN. The growth rate of ICP-CVD hBN is 50 times faster than that of CVD hBN due to more energetic B and N species caused by plasma. The growth mechanism of ICP-CVD hBN without a long incubation time is dominated by nucleation.

Self-Sustained Three-Dimensional Macroporous TiO2-Graphene Photocatalyst for Sunlight Decolorization of Methyl Orange.

The development of highly efficient sunlight-driven photocatalysts has triggered increased attention due to their merit in effluent treatment through a chemically green approach. To this end, we present herein the synthesis and characterization of the TiO2/3D-GF/Ni hybrid emphasizing the main structural and morphological properties and the photodegradation process of a highly resistant aromatic azo dye, methyl orange, under both UV light and simulated sunlight. Three-dimensional (3D) graphene was grown by the thermal CVD method on the nickel foam and subsequently coated with thin films of anatase employing the sol-gel method. Thereafter, it was gratifyingly demonstrated that the hybrid nanomaterial, TiO2/3D-GF-Ni, was able to bring about more than 90% decolorization of methyl orange dye after 30 min under simulated sunlight irradiance. Moreover, the efficiency of the methyl orange decolorization was 99.5% after three successive cycles. This high-performance photocatalyst which can effectively decolorize methyl orange will most likely make a great contribution to reducing environmental pollution by employing renewable solar energy.

The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via

Low temperature Carbon Nano-tubes (CNTs) growth technology is developed in this work with the insert of Al (Aluminum) between Ni (Nickel) and Ti (Titanium) as the reactant. The optimized Al thicknesses are also investigated. CNTs growth at the low temperature below 400 °C is the key factor for the back end of line compatible process integration. In this work, we grow the CNTs by thermal chemical vapor deposition process at 350 and 400 °C. The low ratio of peak ID/IG in Raman spectra and scanning electron microscope images proves the CNTs material quality. On the other hand, the high thermal conductivity (k) value of ∼50 W m − 1 K − 1 is also demonstrated. Both high material quality and k value on our low temperature grown CNTs show promising opportunities for the integration of semiconductor three dimensional packages and power-via related applications.

Atmosferik Koşullara Bağlı Olarak CH3NH3PbI3 İnce Filmlerin Karanlık ve Fotoiletkenlik Davranışı

Methylammonium lead iodide (MAPbI3) (CH3NH3PbI3) has great potential for several fields, especially for photovoltaic applications. Unfortunately, MAPbI3 can seriously suffer from degradation. Hence, the degradation problem limits the photovoltaic and other potential applications of this material. In order to produce a stable photovoltaic material, the degradation mechanism and electronic defect profile of MAPbI3 should be understood carefully, especially regarding its conductivity. In this study, electronic defect changes due to stress factors were evaluated. MAPbI3 films were deposited using thermal chemical vapor deposition (Thermal CVD) and spin coating techniques. Morphological differences due to deposition temperatures were defined by using scanning electron microscopy (SEM). Elemental analysis and structural analysis were conducted by energy-dispersive X-ray spectroscopy (EDS) and X- ray diffraction (XRD), respectively. Deposited MAPbI3 films were exposed to in-situ stress factors such as vacuum atmosphere, deionized water vapor (DIWV) atmosphere, and UV light soaking at constant temperature (300 K) in order to define degradation and electronic defect changes. The electronic changes in the samples were investigated by time-dependent dark conductivity, temperature-dependent dark conductivity, and flux-dependent photoconductivity. This study provides an in-depth understanding of the degradation mechanism and electronic defect profile of MAPbI3 regarding its conductivity.

Symmetric Supercapacitor Based on Nitrogen-Doped and Plasma-Functionalized 3D Graphene

Nitrogen-doped, 3-dimensional graphene (N3DG), synthesized as a one-step thermal CVD process, was further functionalized with atmospheric pressure oxygen plasma. Electrodes were fabricated and tested based on the functionalized N3DG. Their characterization included scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Brunauer–Emmet–Teller (BET), and electrochemical measurements. The tested electrodes revealed a 208% increase in the specific capacitance compared to pristine 3D graphene electrodes in a three-electrode configuration. The performed doping and plasma treatment enabled an increase in the electrode‘s surface area by 4 times compared to pristine samples. Furthermore, the XPS results revealed the presence of nitrogen and oxygen functional groups in the doped and functionalized material. Symmetric supercapacitors assembled from the functionalized 3D graphene using aqueous and organic electrolytes were compared for electrochemical performance. The device with ionic electrolyte EMIMB4 electrolyte exhibited a superior energy density of 54 Wh/kg and power density of 1224 W/kg. It also demonstrated a high-cyclic stability of 15,000 cycles with a capacitance retention of 107%.

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Direct chemical vapor deposition (CVD) of graphene on any desired substrate is always required to manufacture high-quality heterojunctions with excellent interfacial properties. Herein, the growth of graphene on cubic-silicon carbide (3C-SiC) surfaces using conventional high-temperature direct thermal CVD and plasma-enhanced CVD (PECVD) is explored, which is hardly reported to date. Since 3C-SiC substrates are not available, the controlled self-limited 3C-SiC layers on the Si(100) substrates were grown at different temperatures (900–1200 °C) via thermal-CVD technique to obtain virtual 3C-SiC substrates. The direct production of graphene via thermal CVD could not be achieved on such 3C-SiC surfaces. The density functional theory and molecular dynamics simulations confirm that the carbon atom diffusion over the 3C-SiC surface is extremely low, like over the Si surface, which leads to no graphene growth. A similar growth mechanism may be attributed to their similar crystal structure viz diamond cubic for Si and zinc blend for 3C-SiC. However, graphene nanowalls (GNWs) were successfully grown on both Si and 3C-SiC/Si surfaces at 700 °C via the PECVD technique, where similar surface morphologies were observed because the growth mechanism of GNWs is independent of substrate type. Moreover, I–V characterization was performed for different SiC/Si heterostructures and their corresponding GNWs/SiC/Si heterostructures, respectively. The current conduction improved considerably more for GNW/SiC/Si heterostructures as compared to SiC/Si heterostructures, but the creation of a SiC interfacial layer as well as its quality affected the conductivity of GNWs/SiC/Si heterostructures. The inevitable formation of an interfacial SiC layer during the direct graphene growth via thermal CVD on Si substrates can seriously affect the performance of graphene/Si heterojunction devices. Hence, PECVD growth of graphene is an ideal option to fabricate graphene/Si heterojunction devices with excellent interfacial properties or graphene/3C-SiC/Si heterojunction devices for various electronic/optoelectronic applications such as gas sensors and photovoltaic devices.

Forming multilayer graphene at different precursor temperature using cooking oil waste from AYAMAS via chemical vapour deposition

Industrial cooking waste is a worldwide concern. About 24 million metric tons (Mt) of waste oil are globally generated annually from food production industries which have caused severe environmental damage to landfills. To benefit the cooking oil waste, the carbon source is used to synthesise graphene film. The carbon source is cost-effective in terms of waste reduction and environmental benefits. This study used cooking oil waste from AYAMAS Food Corporation Sdn Bhd and nickel foil as precursor and substrate, respectively. The 200 scc/m flow rate and 1000 °C of deposition temperature were fixed. Samples were prepared in different precursor temperatures in the range of 275 to 400 °C with an increment of 25 °C via the double thermal chemical vapour deposition (DT-CVD) method. Raman’s spectra showed that 350 °C had multilayer graphene with the intensity of graphene I2D/IG of 0.38, which is close to 0.5 (multilayer graphene). The UV–Vis results showed that 350 °C had the highest reflectivity value at 250 nm, while FESEM images showed a clear hexagonal shape at 350 °C. The optimum parameter for the synthesis of multilayer graphene was 350 °C precursor temperature. Multilayer graphene was successfully synthesised using industrial cooking oil waste, AYAMAS, as a carbon source via the double thermal chemical vapour deposition method.

Injection of low-energy SiCH5+ ion-beam to Si substrate during chemical vapor deposition process using methylsilane

Silicon carbide (SiC) films produced on Si substrates by the thermal chemical vapor deposition (CVD) method using methylsilane (MS) were compared with those made by the mass-selected ion-beam deposition (MSIBD) method using MS-derived 100 eV SiCH5+ ions. We also investigated the effect of SiCH5+ ion injections during the CVD process. When the substrate was 550 °C, no distinct peaks were found in the Fourier transform infrared (FTIR) spectroscopy spectra of the samples obtained by both CVD and MSIBD. By contrast, an obvious FTIR peak due to the presence of SiC was observed when SiCH5+ ions were injected to a substrate in conjunction with MS. In the case of 650 °C, we found that the film thickness was significantly increased when additional SiCH5+ ions were injected during the CVD process using MS. These results suggest that the interaction between MS and SiCH5+ has some effects on the SiC film formation at the substrate temperatures 550 and 650 °C. When the substrate temperature was set at 750 °C, the effect of the SiCH5+ ion injection on the SiC film formation was negligibly small compared to that of CVD.

Fabrication, characterization and optical properties of Au-decorated Bi2Se3 nanoplatelets

Au-decorated Bi2Se3 nanoplatelet heterostructures are fabricated by a two-step process of thermal CVD at 600 °C and magnetron sputtering at room-temperature. The crystal structures and binding energies of rhombohedral Bi2Se3 and FCC Au are determined by XRD, HRTEM, XPS, and Raman spectroscopy. XPS and Raman spectroscopy reveal the interaction between Au and Bi2Se3 by shifting in the binding energies of Au–Au, Au–Se and Bi–Se bonds and the wavenumber of A1g2 and Eg2 modes. Au-decorated Bi2Se3 nanoplatelet heterostructures are observed using FESEM, and confirmed by XPS, Raman spectroscopy, and HRTEM imaging. Their optical band gap of the Au-decorated Bi2Se3 nanoplatelet heterostructures increases with Au thickness about 1.92-fold as much as that of pristine Bi2Se3 (0.39 eV), owing to the Burstein-Moss effect. The optical absorptance of the Au-decorated Bi2Se3 nanoplatelet heterostructures revealed increment with wavelength from 200 to 500 nm and decrement with increasing wavelength from 500 to 800 nm.

Post-growth enhancement of CVD-grown hexagonal boron nitride films on sapphire

This study explores the effect of post-growth annealing on hexagonal boron nitride (hBN) films grown on c-sapphire substrates by chemical vapor deposition as post-growth annealing proves to overcome the equipment limitations of commercial thermal CVD systems and offers a simplistic way to enhance the properties of the as-grown hBN films useful for multiple-wafer scalability, thereby making it a practical approach for industrial manufacturing of high-quality hBN films. hBN films are grown at 1100 °C by CVD process and are annealed up to 1300 °C under nitrogen atmosphere in an annealing furnace system. It is observed that the annealed hBN films are continuous and have a pronounced granular structure as compared to the as-grown hBN films. The annealed BN films retain the 1:1 B:N stoichiometry and the hexagonal phase as observed in the as-grown hBN films. The optical bandgap of the annealed hBN films is augmented from 5.70 eV to 5.82 eV as a result of the annealing treatment, indicating enhanced optical properties.

Precursor mediated and defect engineered ZnO nanostructures using thermal chemical vapor deposition for green light emission

We used thermal chemical vapour deposition to synthesize zinc oxide nanostructured thin films on n-type silicon substrate using zinc oxide (ZnO) and zinc chloride (ZnCl2) powder precursors in conjunction with bulk graphite powder. The synthesized ZnO nanostructured thin films structures are polycrystalline with a relatively enhanced c-axis orientation for ZnO powder precursor with respect to that of ZnCl2 precursor. The scanning electron microscopic analysis substantiate the higher c-axis orientation of ZnO nanostructures, grown using ZnO powder precursor. The photoluminescence (PL) and UV–Vis measurements suggest the presence of zinc vacancies, causing the green emission from both nanostructured thin films. The measured bandgap of ZnO nanostructured thin film using ZnO powder precursor is slightly higher than that of ZnCl2 powder precursor. The capacitance-voltage and Mott-Schottky measurements showed the n-type characteristics with 6.3 × 1016 cm−3 and 2.7 × 1015 cm−3 carrier densities for ZnO nanostructured thin films prepared using ZnO and ZnCl2 precursors, respectively. The current-voltage measurements showed relatively lower current for ZnO nanostructured thin films, synthesized using ZnCl2 precursor, signifying the presence of zinc vacancies trap sites and is also consistent with Mott-Schottky measurements, showing lower carrier concentrations with respect to that of ZnO precursor derived ZnO nanostructured thin films. Thus, controlled Zn vacancies in ZnO nanostructured thin films may lead to the efficient green light emitters, useful for green light colour emission applications.

Graphene Properties, Synthesis and Applications: A Review.

We have evaluated some of the most recent breakthroughs in the synthesis and applications of graphene and graphene-based nanomaterials. This review includes three major categories. The first section consists of an overview of the structure and properties, including thermal, optical, and electrical transport. Recent developments in the synthesis techniques are elaborated in the second section. A number of top–down strategies for the synthesis of graphene, including exfoliation and chemical reduction of graphene oxide, are discussed. A few bottom–up synthesis methods for graphene are also covered, including thermal chemical vapor deposition, plasma-enhanced chemical vapor deposition, thermal decomposition of silicon, unzipping of carbon nanotubes, and others. The final section provides the recent innovations in graphene applications and the commercial availability of graphene-based devices.

Sugarcane waste based synthesized graphene like nanocarbon (GNC) for shock absorption application

We report on the synthesis, characterization, and shock absorption characteristics of Graphene like Nano Carbon (GNC) prepared by the combustion of biomass (sugarcane waste) using the Rapid Thermal Chemical Vapor Deposition (RT-CVD) technique. Post synthesis, the samples were purified by subjecting them to intercalation and annealing. The synthesised GNCs were then characterised by Raman, Infrared, and UV spectroscopy, together with microscopy. In analysis, the GNCs were observed to be rectangular in shape, thick, having sharp edges and corners, and having an area ∼50–200 μm2 with wrinkles on it. TEM images showed that GNCs exhibit smooth wrinkle contours with bits of dark showing conjugated graphene layers stacked together having multiple defects and dislocations. In Raman spectroscopy, D peak is observed at ∼1335 cm−1 and G peak is observed at ∼1591 cm−1 indicating GNC consists of sp2 and sp3 hybridised complex phases. The Crystalline Length (La), Disordered Length (LD) and Defect Density (nD) have been estimated to be 21.26 nm, 9.60 nm and 1.084 × 10−12/cm2 respectively. FTIR spectra revealed that C-C is present at ∼1420 cm−1 and C-O-C is present at 900 cm−1. In Uv measurements, no typical absorption peak was observed due to the micrometre size of GNC. The shock absorption properties of GNCs were investigated by subjecting them to pressure (~1.5 GPa) using a Split Hopkinson Pressure Bar (SHPB). The obtained mechanical parameters revealed that GNCs absorbed ∼65% of incident energy and ∼15% transmitted, demonstrating their utility in the development of armour, shock and blast mitigating blocks, defense, and space applications.

Electrodeposition of Ni-Fe Alloy in Presence of Complexing Agent

The nickel-iron alloys have been widely used for versatile soft magnetic applications and electro-magnetic applications due to their magnetic properties for a long time. Also, it has been discovered that Ni-Fe alloy near 36 wt% Ni shows almost zero thermal expansion composition(CTE) in a wide temperature range (~150 ℃). The phenomenon showing low CTE in a specific composition is called the Invar effect. Due to the Invar effect, Invar alloys are used for temperature-sensitive applications such as oscillators and fiber-optic package parts. Invar alloy films are used for fine metal masks, an essential part of OLED fabrication. The invar film currently in use is fabricated using the pyrometallurgy method, more than 20um thick. However, miniaturization and high performance of the products require the thinner thickness of the Invar film, around 10um thick which shows the need for a bottom-up fabrication process of invar film. There are various methodologies to fabricate thin films, such as thermal evaporation, sputtering, CVD, and electrodeposition. Most fabricating processes are the vacuum process, a high-cost and non-continuous process. On the other hand, electrodeposition is a non-vacuum process, relatively low-cost, large-scale, and continuous process.Despite these advantages, there are some obstacles to gaining the Invar thin film by electrodeposition, such as anomalous deposition, composition uniformity, and higher CTE of electrodeposited Invar film. There are researches[1-3] about electrodeposited Ni-Fe thin films in the aspect of CTE, magnetic properties, crystal structures, etc. However, very few researchers have seen the effect of complexing agents other than specific complexing agents such as boric acid and ascorbic acid. In addition, Ni-Fe electrodeposition shows very different results depending on temperature and agitation, but no research confirms the effect on various complexing agents under the same condition.In this study, we synthesized Ni-Fe alloy thin film by electrodeposition in the presence of various complexing agents with different functional groups (amine, carboxyl, alcohol, etc.) such as glycolic acid, malonic acid, ethylenediamine, etc. on 20um stainless 304 foil substrates. The electrodeposition was conducted under the aqueous acidic bath(pH 2) at 55℃. Electrochemical studies were conducted to set appropriate potential and current density for electrodeposition. The thin film was characterized by SEM, EDS, XRD, and copper strip tests to observe the difference in composition, surface morphology, phase, and internal stress.

Stress Relaxation in SGOI Structure Obtained by Condensation

The development of effective buffer layer has required years of work in order to obtain relaxed SiGe substrates [1]. However, main drawback of this approach relies on the presence of embedded and numerous dislocations which can be detrimental for optimal applications. Recently, a surprising relaxation phenomenon has been observed on specific Silicon-Germanium On Insulator (SGOI) structures [4-5].It has been observed that when the sample is heated, slippage is observed at the SGOI/Buried Oxide (BOX) interface.The phenomenon is not clearly understood. However, several explanations have been raised. It can be explained by the mechanical properties by Ge-O bonds which are weaker than the Si-O bonds at the SGOI/BOX interface causing the slip. [2] Also, the Ge atoms in the last crystalline layer at the BOX interface decreases the quantity of Si atoms inducing less bonds between the Si atoms of SGOI and the BOX.We suggest to take advantage of this phenomenon to obtain fully relaxed SGOI layers without dislocations. This new approach would allow to create high performance relaxed SGOI layers in industrial conditions with 300 mm wafers. This innovation is relevant for several applications, such as optical applications and the formation of base substrate to generate tensile Si epitaxy layer. It has to be noticed that any Ge concentration until pure GeOI structure is possible.Figure 1 shows the different process steps to obtain relaxed SGOI layer explained below. SiGe epitaxy (fig.1-a) is performed on an 300mm SOI wafer by Rapid Thermal Chemical Vapor Deposition (RT-CVD). Germane (GeH4) and Dichlorosilane (DCS) are used as precursor gases to obtain a 20nm thick fully strained Si0.8Ge0.2 layer. Upstream work is performed to improve the uniformity of the SiGe layer (thickness and composition) within the 300mm wafer. Indeed, they are key parameters impacting Ge concentration within wafer uniformity obtained after condensation.[3]Then, condensation is performed (fig.1-b) using thermal oxidation in a 300mm industrial furnace under N2/O2 atmosphere at 1000°C during several hours. Condensation is tuned to obtain the desired Ge concentration in the SGOI structure. Condensation allows to transform a SiGe/Si/BOX structure into SiGe/BOX structure called SGOI. Two mechanisms are involved in the condensation. The first mechanism is the Si-selective oxidation in the SiGe layer allowing Ge atoms to accumulate at the oxidation interface. The second mechanism is the Ge diffusion in the structure which allows SiGe inter-diffusion. The Ge atoms are maintained and homogenized in depth of the SGOI layer during the interdiffusion mechanism thanks to the BOX acting as a diffusion barrier. [2]During this work, the layer composition, the thickness as well as the stress were characterized by ellipsometry, XRR, XRD and SIMS. In addition, the surface was analyzed by AFM to detect any crystal defects.In this study, we propose to investigate the relaxation of SGOI layer with a concentration of Ge=50% because such structure shows no defects after condensation [2]. Thereafter, it will be possible to carry out GeOI in the future.Figure 2 shows SiGe thickness and density measurement by XRR. A thickness variation of 13.67 A and a density variation of 0.22g/cm3 of the SGOI layer after condensation on the whole wafer is obtained. The average density is 4,31g/cm3 with a concentration of %Ge=51% which was our target concentration.Then, the relaxation phenomenon is studied using anneals in the temperature range [700;900] °C during several hours. Indeed, we chose a temperature close to the SiO2 viscosity temperature and a long annealing time allowing to generate a slow slip thus limiting defects.Figure 3 shows a RSM map obtained by XRD of an Si0.5Ge0.5OI layer after annealing at 800°C for 2h. The mapping shows Si substrate as well as the layer relaxed along the (113) and (224) planes at an angle Φ=45°. RSM map allows to calculate the relaxation rate which is 22%. The relaxation on the sample is a success that remains to be improved by annealing time or temperatures to be optimized.This new approach would allow the realization a defect free relaxed SGOI layer under industrial conditions on a 300mm wafer. It would provide a new method for applications such as optical or the growth of tensile Si channels.[1] P.M.Mooney, Materials Science and Engineering, 1996[2] F.Roze. PhD thesis, 2018[3] D.Valenducq, PhD thesis, 2021[4] V.Boureau et al., ECS, 2018[5] Usuda, Koji, et al., Solid-State Electronics, 2013 Figure 1