Optimization of Growth Parameters of Thermal Chemical Vapor Deposition Method for 2D MoS2 Synthesis

Abstract

Even after a decade of research on MoS2, it is still quite challenging to obtain high quality MoS2 films using a controlled synthesis technique. Out of all the available methods chemical vapor deposition (CVD) has proven to be a reliable technique to produce MoS2 thin films. The CVD growth process is sensitive to variety of parameters involved in the process. In the present work, we report the effect of pressure, temperature, gas flow, and position of substrate on the growth of MoS2 films. After several failures, the technique is optimized to synthesize high quality MoS2 films on quartz substrate. Further, the films are characterized using XRD, UV-Vis Spectroscopy, Photoluminescence Spectroscopy and Raman Spectroscopy. The main objective of this work is to formulate a method that produces MoS2 films using thermal CVD process by optimizing various parameters.