Abstract Binary indium-tin (In-Sn) and ternary indium-tin-bismuth (In-Sn-Bi) alloys hold significant promise for reducing soldering temperatures in electronic assembly. However, traditional metallurgical methods are unsuitable for fabricating micro-solder joints, making alloy electroplating essential for fine-pitch interconnects. The co-electroplating of alloy constituents is often hindered by substantial differences in reduction potentials. Therefore, sequential electroplating followed by high-temperature reflow emerges as a more practical solution. Nonetheless, challenges persist, particularly due to the limited understanding of indium (In) deposition kinetics and its strong dependence on pH. This study investigates the influence of pH on In plating rates and overall deposition kinetics. The thickness and cross-sectional morphology of electroplated In films are analyzed across a pH range of 2.2–3.3, with plating conditions optimized to identify the most effective parameters. Structural properties, uniformity, and potential oxide inclusions in the electroplated films are assessed using X-ray diffraction and differential scanning calorimetry. Plating at pH 2.9 in a solution of 0.12M In₂(SO₄)₃ and 0.70M Na₂SO₄ produces the highest deposition rate and the most structurally homogeneous layers. Deviations from this optimal pH inevitably promote side reactions that markedly reduce deposition rates and compromise film quality.
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