Silicon-vacancy Centers In Diamond Research Articles

Limitations in design and applications of ultra-small mode volume photonic crystals

Ultra-small mode volume nanophotonic crystal cavities have been proposed as powerful tools for increasing coupling rates in cavity quantum electrodynamics systems. However, their adoption in quantum information applications remains elusive. In this work, we investigate possible reasons why, and analyze the impact of different low mode volume resonator design choices on their utility in quantum optics experiments. We analyze band structure features and loss rates of low mode volume bowtie cavities in diamond and demonstrate independent design control over cavity-emitter coupling strength and loss rates. Further, using silicon vacancy centers in diamond as exemplary emitters, we investigate the influence of placement imprecision. We find that the benefit on photon collection efficiency and indistinguishability is limited, while the fabrication complexity of ultra-small cavity designs increases substantially compared to conventional photonic crystals. We conclude that ultra-small mode volume designs are primarily of interest for dispersive spin-photon interactions, which are of great interest for future quantum networks.

Deterministic creation of strained color centers in nanostructures via high-stress thin films

Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.

Excited State Properties of Point Defects in Semiconductors and Insulators Investigated with Time-Dependent Density Functional Theory.

We present a formulation of spin-conserving and spin-flip hybrid time-dependent density functional theory (TDDFT), including the calculation of analytical forces, which allows for efficient calculations of excited state properties of solid-state systems with hundreds to thousands of atoms. We discuss an implementation on both GPU- and CPU-based architectures along with several acceleration techniques. We then apply our formulation to the study of several point defects in semiconductors and insulators, specifically the negatively charged nitrogen-vacancy and neutral silicon-vacancy centers in diamond, the neutral divacancy center in 4H silicon carbide, and the neutral oxygen-vacancy center in magnesium oxide. Our results highlight the importance of taking into account structural relaxations in excited states in order to interpret and predict optical absorption and emission mechanisms in spin defects.

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

Neutral Silicon-Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Neutral silicon-vacancy ($\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers requires careful Fermi-level engineering of the diamond host material, making further technological development challenging. Here, we show that $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of $\text{Si-}{V}^{\phantom{\rule{0.1em}{0ex}}0}$ centers as well as other emerging quantum defects in diamond.

Quantum memory based on SiV-centers in nanodiamonds

Recently, the possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond has been studied (Kalachev et al 2019 Laser Phys. 29 104001). It was shown that the signal-to-noise ratio can significantly exceed unity for short single-photon input pulses if the orbital level splitting in the ground state of the color centers is significantly enhanced by strain. The latter results in decreasing the coherence time between the two available orbital branches of the ground state, though. In the present work, we consider the possibility of increasing the storage time due to the use of nanodiamonds. It is shown that suppression of direct electron-phonon transitions in the diamond nanocrystals makes it possible to increase the coherence time of both orbital and spin qubits by orders of magnitude.

Coherent Interactions between Silicon-Vacancy Centers in Diamond.

We report tunable excitation-induced dipole-dipole interactions between silicon-vacancy color centers in diamond at cryogenic temperatures. These interactions couple centers into collective states, and excitation-induced shifts tag the excitation level of these collective states against the background of excited single centers. By characterizing the phase and amplitude of the spectrally resolved interaction-induced signal, we observe oscillations in the interaction strength and population state of the collective states as a function of excitation pulse area. Our results demonstrate that excitation-induced dipole-dipole interactions between color centers provide a route to manipulating collective intercenter states in the context of a congested, inhomogeneous ensemble.

Prolonged Orbital Relaxation by Locally Modified Phonon Density of States for the SiV^{-} Center in Nanodiamonds.

Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected by the defects symmetry, the spin coherence is susceptible to rapid orbital relaxation limiting the spin dephasing time. A prolongation of the orbital relaxation time is therefore of utmost urgency and has been tackled by operating at very low temperatures or by introducing large strain. However, both methods have significant drawbacks: the former requires use of dilution refrigerators and the latter affects intrinsic symmetries. Here, a novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states in the relevant frequency range, by restricting the diamond host to below 100nm. Subsequently measured coherent population trapping shows an extended spin dephasing time compared to the phonon-limited time in a pure bulk diamond. The method works at liquid helium temperatures of few Kelvin and in the low-strain regime.

High-purity single photons obtained with moderate-NA optics from SiV center in nanodiamonds on a bullseye antenna

Coherent exchange of single photons is at the heart of applied quantum optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye–Waller factor, short lifetime and extraordinary spectral stability is unique in the field of solid-state single photon sources. However, the excitation and detection of individual centers requires high numerical aperture (NA) optics which, combined with the need for cryogenic temperatures, puts technical overhead on experimental realizations. Here, we investigate a hybrid quantum photonics platform based on silicon-vacancy center in nanodiamonds and metallic bullseye antenna to realize a coherent single-photon resource that operates efficiently down to low NA optics with an inherent resistance to misalignment.

Using silicon-vacancy centers in diamond to probe the full strain tensor

An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.

Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond.

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.

Characterizing the Nonlinear Optical Response of Silicon Vacancy Centers in Diamond and Showcasing the Next Generation of Optical Frequency Combs

Characterizing the Nonlinear Optical Response of Silicon Vacancy Centers in Diamond and Showcasing the Next Generation of Optical Frequency Combs

Coupling spins to nanomechanical resonators: Toward quantum spin-mechanics

Spin-mechanics studies interactions between spin systems and mechanical vibrations in a nanomechanical resonator and explores their potential applications in quantum information processing. In this review, we summarize various types of spin-mechanical resonators and discuss both the cavity-QED-like and the trapped-ion-like spin-mechanical coupling processes. The implementation of these processes using negatively charged nitrogen vacancy and silicon vacancy centers in diamond is reviewed. Prospects for reaching the full quantum regime of spin-mechanics, in which quantum control can occur at the level of both a single spin and a single phonon, are discussed with an emphasis on the crucial role of strain coupling to the orbital degrees of freedom of the defect centers.

Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States.

Neutral silicon vacancy (SiV^{0}) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV^{0} centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV^{0} as well as other emerging defect systems.

Optical manipulation of the negative silicon-vacancy center in diamond

The silicon-vacancy center in diamond has recently attracted significant attention as a candidate for quantum information processing as it overcomes many of the optical issues present in the nitrogen-vacancy center. Historically it has been hampered by short dephasing times; however the recent development of high-purity samples at low temperatures resolves this issue. Hence it is timely to explore whether silicon-vacancy centers are useful for quantum tasks beyond single-photon sources. Here we investigate the potential of the silicon-vacancy center to realize two important operations required for quantum information processing: high-efficiency projective measurement and efficient single-qubit rotations. Due to its similar nature, the germanium-vacancy center is discussed as a point of comparison.

Spectroscopic signatures of electron-phonon coupling in silicon-vacancy centers in diamond

Vacancy centers in diamond have proven to be a viable solid-state platform for quantum coherent opto-electronic applications. Among the variety of vacancy centers, silicon-vacancy (SiV) centers have recently attracted much attention as an inversion-symmetric system that is less susceptible to electron-phonon interactions. Nevertheless, phonon-mediated processes still degrade the coherent properties of SiV centers, however characterizing their electron-phonon coupling is extremely challenging due to their weak spectroscopic signatures and remains an open experimental problem. In this paper we theoretically investigate signatures of electron-phonon coupling in simulated linear and nonlinear spectra of SiV centers. We demonstrate how even extremely weak electron-phonon interactions, such as in SiV centers, may be completely characterized via nonlinear spectroscopic techniques and even resolved between different fine-structure transitions.

Long optical coherence times of shallow-implanted, negatively charged silicon vacancy centers in diamond

The creation of single, negatively charged silicon vacancy (SiV−) centers in well-defined diamond layers close to the host surface is a crucial step for the development of diamond-based quantum optic devices with many applications in nanophotonics, quantum sensing, or quantum information science. Here, we report on the creation of shallow (10 nm below the surface), single SiV− centers in diamond using low energy Si+ ion implantation with subsequent high temperature annealing at 1500 °C. We show transition linewidths down to 99 MHz and narrow inhomogeneous distributions. Furthermore, we achieved a reduction of homogeneous linewidths by a factor of 2 after removing subsurface damage using oxygen plasma processing. These results not only give insights into the formation process of SiV− centers but also indicate a favorable processing method to fabricate shallow single quantum emitters in diamond perfectly suited for coupling to nanostructures on the diamond surface.

Raman quantum memory based on an ensemble of silicon-vacancy centers in diamond

The possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond is studied. It is shown that the signal-to-noise ratio at the output of the memory can significantly exceed unity for short single-photon pulses if the number of optical centers is small enough, which can be achieved with diamond samples in optical microresonators, and level splitting in their ground state is significantly enhanced by strain.

Bright near-surface silicon vacancy centers in diamond fabricated by femtosecond laser ablation

We report the generation of single negatively charged silicon vacancy (SiV-) color centers by focusing a femtosecond (fs) laser on top of a high-purity diamond coated with a layer of Si nanoball. Under the interaction of a high-intensity fs laser, Si atoms were ionized and implanted into the diamond, accompanied with the creation of vacancies. After annealing at 850°C in vacuum for 1h, the photoluminescence spectra of bright spots around the created crater presented a typical strong zero-phonon line at around 737nm of SiV- centers. Bright single SiV- color centers could be observed with a maximum saturating counting rate of 300×103 counts/s. We explain the formation mechanism of SiV- centers in diamond via a Coulomb explosion model. The results demonstrate that fs laser ablation can be utilized as a very promising tool to conveniently fabricate single bright SiV- centers in diamond.