Abstract
The possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond is studied. It is shown that the signal-to-noise ratio at the output of the memory can significantly exceed unity for short single-photon pulses if the number of optical centers is small enough, which can be achieved with diamond samples in optical microresonators, and level splitting in their ground state is significantly enhanced by strain.
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