Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

S Lagomarsino,N Soltani,C Czelusniak,L Hunold,M Massi,A M Flatae,S Sciortino,N Gelli,P Reuschel,L Giuntini,M Agio,H Kambalathmana,F Sledz

doi:10.3389/fphy.2020.601362

Abstract

Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.

Highlights

Diamond offers plenty of attracting features for photonics applications: the large band-gap allows for a very large optical window and gives rise to the existence of hundreds of point defects presenting interesting optical and electrical characteristics [1, 2]
We reviewed current efforts in the creation of SiV color centers in diamond by ion implantation and briefly mentioned their potential for quantum applications and sensing
We discussed the optical properties of SiV centers in single crystal and polycrystalline samples

Summary

INTRODUCTION

Diamond offers plenty of attracting features for photonics applications: the large band-gap allows for a very large optical window and gives rise to the existence of hundreds of point defects presenting interesting optical and electrical characteristics [1, 2]. The silicon-vacancy (SiV) complex is a point defect with D3d symmetry, emerging from the splitting of a vacancy between two neighboring lattice sites with a silicon atom occupying the position in between Both the neutral [8] (SiV0) and the negative [9] (SiV−) charge states are known to originate an optical transition with most of the intensity (70–90% at room temperature) concentrated in a zero-phonon line (ZPL) at 946 and 738 nm, respectively, with weak phononic sidebands. We are interested in the distribution of the final positions of an implanted ion and possibly in the lattice damage produced by irradiation, usually expressed in term of the Frenkel couple’s density induced by the dislocation of those nuclei kicked-off by incident ions These are both studied by means of Monte Carlo simulations [15, 16], considering the characteristics of the ion (energy, charge, mass) and the target material (atom density and mass, atomic number, displacement energy of the nuclei). The beam, limited by the exit slits SL3, is shaped by a perforated quartz, whose luminescence is monitored off-axis by a second Aptina MT9v034 camera, employed to be sure that the beam hits the sample

Implantation Procedure

Findings

CONCLUSION AND OUTLOOK