Silicon Nitride Platform Research Articles

Silicon photonic olfactory sensor based on an array of 64 biofunctionalized Mach-Zehnder interferometers.

Silicon photonics can address a variety of applications, from datacom and biosensing to lidars. Recently, this technology has been explored for gas sensing. Detection and identification of odors remains a critical challenge in diverse areas such as air quality, food spoilage, or personal well-being. In this work, we present an olfactory sensor based on an array of 64 biofunctionalized Mach-Zehnder interferometers integrated on a silicon nitride platform. The ability to analyze odors at ppm level is demonstrated for several volatile organic compounds.

Silicon nitride stress-optic microresonator modulator for optical control applications.

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz2/3 and 73.8 dB·Hz2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Design and Optimization of a Compact Ultra-Broadband Polarization Beam Splitter for the SCL-Band Based on a Thick Silicon Nitride Platform

The polarization beam splitter is an essential photonic integrated circuit in applications where a high-performing on-chip polarization diversity scheme is required. The lower refractive index contrast of the silicon nitride material platform compared to silicon-on-insulator constitutes the separation of polarized light states a challenging task since for this purpose a large difference between the effective refractive indices of the fundamental TE and TM modes is highly desirable. In this paper, we present the design and optimization analysis of an ultra-broadband polarization beam splitter based on a thick silicon nitride platform through extensive 3D-FDTD simulations. The proposed device exploits two different Si3N4 thicknesses that enable the discrimination of the two polarizations at the proximity of an 800 nm thick slot and a 470 nm thick strip waveguide via directional coupling. The proposed two-stage PBS achieves higher than 30.6 dB polarization extinction ratio (PER) for both TE and TM polarizations across a 130 nm span at the SCL-band. The dimensions of the PBS are 94 × 14 μm2 and the insertion losses are calculated to be lower than 0.8 dB for both polarizations. The fabrication tolerance of the device is also discussed.

Reconfigurable Guided‐Mode Conversion Using Cladding Medium Switching Strategy in Subwavelength Grating Waveguide

AbstractIn a waveguide‐based coupled‐mode system, various mode conversions are achieved by designing mode evolution procedures. However, the differences of refractive indices among modes exceed the capability of conventional tuning mechanism, so most reported mode manipulation devices can only realize fixed mode conversions. This paper introduces the cladding medium switching strategy to the subwavelength grating waveguide‐based coupled‐mode system, and proposes a reconfigurable mode converter on silicon nitride platform. This work systematically analyzes the phase matching conditions on a coupled‐mode system. Results show that for both whole and partial upper‐cladding switchable, it is possible to achieve reconfigurable mode conversions. For whole cladding switchable case, this work demonstrates a double‐state mode converter, which converts the input mode to TE2 and TE1 modes under cladding refractive indices of 1 and 1.7. This work expands it to triple‐state mode conversion with window‐style cladding, which converts the input to TE2, TE1, and TE0 modes under cladding of 1, 1.54, and 1.7. The optical bandwidths are relatively large, and the conversion efficiencies exceed 56% for all cases. The mechanism provides a non‐volatile and energy‐efficient way for tunable mode conversions, which is promising for applications in optical networks, communications, and sensors, etc.

Low loss silicon nitride 1×4 microwave photonic beamforming chip.

In this paper, based on the low loss double strip silicon nitride platform, we designed and fabricated an ultra-low loss 1×4 microwave photonic beamforming chip, which contains a 1×4 beam splitter and four 5-bit optical delay lines. Each optical delay line can achieve 32 delay states varying from 0 ps to about 130 ps, which can support 21 different beamforming angles covers from -56.42° to 56.68° for 10 GHz RF signal. A low on-chip insertion loss of about 4 dB is achieved for each 5-bit optical delay line. Furthermore, a very low loss delay ratio of about 0.0016 dB/ps is achieved and a recorded low loss fluctuation of about 0.3 dB is obtained during the 32 states delay switching. In addition, the switching speed and driving power consumptions of the proposed beamforming chip were investigated. The proposed beamforming chip could have great potential in optical controlled phased antenna arrays systems.

Dual-Polarization Bandwidth-Bridged Bandpass Sampling Fourier Transform Spectrometer from Visible to Near-Infrared on a Silicon Nitride Platform.

On-chip broadband optical spectrometers that cover the entire tissue transparency window (λ = 650–1050 nm) with high resolution are highly demanded for miniaturized biosensing and bioimaging applications. The standard spatial heterodyne Fourier transform spectrometer (SHFTS) requires a large number of Mach–Zehnder interferometer (MZI) arrays to obtain a broad spectral bandwidth while maintaining high resolution. Here, we propose a novel type of SHFTS integrated with a subwavelength grating coupler (SWGC) for the dual-polarization bandpass sampling on the Si3N4 platform to solve the intrinsic trade-off limitation between the bandwidth and resolution of the SHFTS without having an outrageous number of MZI arrays or adding additional active photonic components. By applying the bandpass sampling theorem, the continuous broadband input spectrum is divided into multiple narrow-band channels through tuning the phase-matching condition of the SWGC with different polarization and coupling angles. Thereby, it is able to reconstruct each band separately far beyond the Nyquist criterion without aliasing error or degrading the resolution. We experimentally demonstrated the broadband spectrum retrieval results with the overall bandwidth coverage of 400 nm, bridging the wavelengths from 650 to 1050 nm, with a resolution of 2–5 nm. The bandpass sampling SHFTS is designed to have 32 linearly unbalanced MZIs with the maximum optical path length difference of 93 μm within an overall footprint size of 4.7 mm × 0.65 mm, and the coupling angles of SWGC are varied from 0° to 32° to cover the entire tissue transparency window.

Racetrack resonator based integrated phase shifters on silicon nitride platform

We demonstrate a compact, low power consumption phase shifter based racetrack resonator hybrid integrated with few-layer MoS2. The phase shifter is fabricated on a low-loss SiN platform. By using wet transfer method, the few-layer MoS2 is transferred to the SiN waveguide, and the ionic liquid is introduced to form a capacitor configuration. In the presence of electrostatic doping, the effective index of MoS2-SiN waveguide can be efficiently modulated by adjusting bias voltage. The phase tuning efficiency of our device is measured as 13.24 pm/V at 1530 nm, and the corresponding VπL is calculated as 0.41 V∙cm. The results indicate that the strong light-matter interaction between few-layer MoS2 and SiN photonic device in near-infrared waveband, which can be used for low-loss integrated optical links.

Dual-mode microresonators as straightforward access to octave-spanning dissipative Kerr solitons

The Kerr soliton frequency comb is a revolutionary compact ruler of coherent light that allows applications from precision metrology to quantum information technology. The universal, reliable, and low-cost soliton microcomb source is key to these applications. As a development and extension of the direct creation of a soliton microcomb with the dual-mode scheme in an aluminum nitride microresonator, this paper thoroughly presents the design strategy to reliably attain such dual-modes in the silicon nitride (Si3N4) platform, separated by ∼10 GHz, which stabilizes soliton formation without using additional auxiliary laser or RF components. We demonstrate the deterministic generation of the refined single-solitons that span 1.5-octaves, i.e., near 200 THz, via adiabatic pump wavelength tuning. The ultra-wide soliton existence range up to 17 GHz not only suggests the robustness of the system but will also extend the applications of soliton combs. Moreover, the proposed scheme is found to easily give rise to multi-solitons as well as the soliton crystals featuring enhanced repetition rate (2 and 3 THz) and conversion efficiency greater than 10%. We also show the effective thermal tuning of mode separation to increase the possibility to access the single-soliton state. Our results are crucial for the chip-scale self-referenced frequency combs with a simplified configuration.

Photonic Microwave Frequency Measurement With High Accuracy and Sub-MHz Resolution

A dynamic photonic instantaneous microwave frequency measurement approach is reported based on frequency-to-time mapping and filtering using an integrated ring resonator, a local oscillator for heterodyne detection, and an electrical bandpass filter. The unknown signal is time-swept through the narrow linewidth of the ring resonator, realized on a silicon nitride platform. A shifted local oscillator at a fixed frequency difference from the center of the ring resonator defines an intermediate frequency for heterodyne detection. After conversion to the electrical domain using a photodiode, this intermediate frequency is filtered by a narrowband electrical bandpass filter. The proposed system demonstrates a resolution of less than 1 MHz and a measurement accuracy of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\pm$</tex-math></inline-formula> 0.4 MHz over a frequency range of 10 GHz, only limited by the used experimental components. To the best of our knowledge, this is the highest accuracy and resolution shown so far for photonic microwave frequency measurement systems. Since the method can be easily integrated on any photonic platform, it might become an integral part of future wireless devices.

Hybrid nanophotonic-microfluidic sensor for highly sensitive liquid and gas analyses.

Today, a lab-on-a-chip is one of the most promising ways to create sensor devices for gas and liquid analysis for environmental monitoring, early diagnosis, and treatment effectiveness assessment. On the one hand, this requires a large number of measurements and, on the other hand, involves minimum consumption of the test analytes. Combination of highly sensitive photonic integrated circuits (PICs) with microfluidic channels (MFCs) is necessary to solve this problem. In this work, PICs based on a silicon nitride platform integrated with MFCs for studying liquids and gases were developed. Different concentrations of isopropanol in de-ionized water were used as the analyte. Based on this, the sensitivity (S) and detection limit (DL) of the analyzed solution were evaluated. Entire system calibration was carried out to calculate S and DL, considering experimental and numerical simulation data. This development may be of interest as a promising platform for environmental monitoring and realization of point-of-care strategy for biomedical applications.

Low loss modified Bezier bend waveguide.

We proposed and experimentally demonstrated a low loss modified Bezier bend for silicon and silicon nitride photonic integrated circuits. Both simulation and experimental results confirm that the modified Bezier bend can effectively reduce the bend loss for silicon and silicon nitride platform. At a bend radius of 1 µm, the reduction of bend loss from 0.367 dB/90° of circular bend and 0.35 dB/90° of traditional Bezier bend to 0.117 dB/90° of modified Bezier bend for silicon platform was experimentally demonstrated. For a 12-µm radius silicon nitride bend, the bend loss reduction from 0.65 dB/90° of circular bend and 0.575 dB/90° of traditional Bezier bend to 0.32 dB/90° was achieved. The proposed modified Bezier bend design can also be applied to other material systems, such as InP, LN, GaAs, etc., to effectively reduce the bend waveguide loss.

On-Chip Notch Filter on a Silicon Nitride Ring Resonator for Brillouin Spectroscopy

Noncontact Brillouin spectroscopy is a purely optical and label-free method to retrieve fundamental material viscoelastic properties. Recently, the extension to a three-dimensional imaging modality has paved the way to novel exciting opportunities in the biomedical field, yet the detection of the Brillouin spectrum remains challenging as a consequence of the dominant elastic background light that typically overwhelms the inelastic Brillouin peaks. In this Letter, we demonstrate a fully integrated and ultra-compact Brillouin notch filter based on an optical ring resonator fabricated on a silicon nitride platform. Our on-chip ring resonator filter was measured to have a 10 dB extinction ratio and a Q factor of 1.9x10^5. The experimental results provide a proof-of-concept on the ability of the on-chip filter to attenuate the elastic background light, heralding future developments of fully integrated, ultra-compact and low-cost Brillouin spectrometers.

Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform.

The fabrication processes for silicon nitride photonic integrated circuits evolved from microelectronics components technology—basic processes have common roots and can be executed using the same type of equipment. In comparison to that of electronics components, passive photonic structures require fewer manufacturing steps and fabricated elements have larger critical dimensions. In this work, we present and discuss our first results on design and development of fundamental building blocks for silicon nitride integrated photonic platform. The scope of the work covers the full design and manufacturing chain, from numerical simulations of optical elements, design, and fabrication of the test structures to optical characterization and analysis the results. In particular, technological processes were developed and evaluated for fabrication of the waveguides (WGs), multimode interferometers (MMIs), and arrayed waveguide gratings (AWGs), which confirmed the potential of the technology and correctness of the proposed approach.

MoS2 hybrid integrated micro-ring resonator phase shifter based on a silicon nitride platform

We demonstrate a low-power, compact micro-ring phase shifter based on hybrid integration with atomically thin two-dimensional layered materials, and experimentally establish a low-loss silicon nitride platform. Using a wet transfer method, a large-area few-layer MoS2 film is hybrid integrated with a micro-ring phase shifter, leading to a tuning efficiency of 5.8 pm V-1 at a center wavelength of 1545.294 nm and a half-wave-voltage-length product as low as 0.09 V cm. Our device is designed to provide a hybrid-integration-based active phase modulation scheme for integrated optical communication networks with large-cross-section silicon nitride waveguides.

Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.

Wideband SiN pulse interleaver for optically-enabled analog-to-digital conversion: a device-to-system analysis with cyclic equalization.

We present the design and experimental characterization of a silicon nitride pulse interleaver based on coupled resonator optical waveguide filters. In order to achieve a targeted free spectral range of 1.44 THz, which is large given the reduced optical confinement of the silicon nitride platform, individual ring resonators are designed with tapered waveguides. Its application to time-interleaved photonically-assisted ADCs is analyzed by combining experimental characterization of the photonic integrated circuit with a comprehensive model of the entire ADC. The impact of fundamental signal distortion and noise sources affecting the converter is investigated and suitable equalization techniques at the digital signal processing level are evaluated. The novel application of a simple but powerful equalization filter in the DSP domain allows for a significant improvement of the digitized signal SNR. An ENOB of 5 over a 75 GHz bandwidth (150 GS/s) and an ENOB of 4.3 over a 100 GHz bandwidth (200 GS/s) are expected to be achievable with compact and off-the-shelf single-section semiconductor mode locked lasers, that can be further improved with lower noise light sources.

Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO2/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform

We report experimental fabrication and characterization of photoMOSFETs with self-aligned gate-stacking heterostructures of indium-tin-oxide (ITO)/Ge nanospheres/SiO₂-shell/Si_1-xGe_x-nanosheets. Array of Ge-nanosphere/SiO₂-shell/SiGe-nanosheet heterostructures was created in a self-organized, CMOS approach using the thermal oxidation of lithographically-patterned poly-Si_0.85Ge_0.15 nanopillars over buffer layers of Si₃N₄ on top of SOI substrates. With a polysilicon dummy-gate, source and drain self-align with the transparent ITO gate using a replacement-metal-gate process. Very high photocurrent gain, large photoresponsivity, as well as improved input capacitance and 3dB frequency were experimentally achievable in our photoMOSFETs. The pivotal roles of Ge-optical gate and SiGe-channel for large photoresponsivity and current gains were analyzed via numerical simulation.

Performance of microheaters for tunable on-chip interferometer

Mach-Zehnder interferometer (MZI) is a valuable practical tool in many optical science areas. In particular, high-contrast MZI are required for experimental realization of displacement-based quantum receivers that can discriminate weak coherent states of light with the minimum error rate. In this work we study phase modulators of tunable on-chip interferometer on silicon nitride (Si3N4) platform for telecom wavelength (1550 nm) consisting of several MZI. Phase modulators on one of the arms of MZI consists of microheaters and waveguide. Microheaters heat waveguides changing its refractive index due to thermo-optical effect providing a phase shift. We measure the bandwidth of phase modulators and study their operation in pulse mode.

Thermo-Optic Phase Tuners Analysis and Design for Process Modules on a Silicon Nitride Platform

In this paper, we present a systematic design for manufacturing analysis for thermo-optic phase tuners, framed within the process modules available on a silicon nitride platform. Departing from an established technology platform, the heat distribution in various micro-structures was analyzed, both in steady and transient states, employing a 2D heat transfer model solved numerically. Multi-parametric simulations were performed on designs combining trenches and substrate undercut, by varying their position and dimensions. The simulation results were compared to a reference conventional fully-clad cross-section. Deep air-filled trenches are shown to reduce the power consumption up to 70%, alongside a thermal crosstalk phase shift reduction of more than one order of magnitude (0.045 π rad/mm), at the expense of a slightly lower bandwidth (11.8 kHz). The design with trenches and substrate undercut lowers the power consumption up to 97%, decreases two orders of magnitude the crosstalk (0.006 π rad/mm), at the cost of less than one order of magnitude in bandwidth (0.9 kHz). In the works, we selected three different heater materials (Cr/Au, Al, poly-silicon) offered by the fab and four different heater widths (2.5 to 7 μm). Their combinations are related to performance, reliability and durability of the devices, strongly linked to temperature, current density, and Omegaic resistance. The different figures of merit defined, and the methodology followed, can be mimicked by future designers to take design decisions at bird’s eye.

Spectrum-continuous narrowband filter with an enhanced flat-top passband and sharp roll-off performance.

We demonstrate a spectrum-continuous narrowband filter based on multi-section Mach-Zehnder interferometer (MZI) structures on a silicon nitride platform. Enhanced in-band flatness and sharp out-of-band roll-off features are achieved by cascading MZIs of specific functionalities in a series. This filter is fabricated in a single chip with a total waveguide length exceeding 237 cm. We experimentally demonstrate for the first time, to the best of our knowledge, a four-channel spectrum-continuous filter with a 3 dB bandwidth of 580 MHz, a 1 dB fluctuation bandwidth as high as 356 MHz, and an excellent 20 dB roll-off factor of 1.26 that are obtained simultaneously. Both the optical and electrical experimental results show that the proposed filter can play a key role in integrated microwave photonic front-end systems.