Abstract
We report experimental fabrication and characterization of photoMOSFETs with self-aligned gate-stacking heterostructures of indium-tin-oxide (ITO)/Ge nanospheres/SiO<sub>2</sub>-shell/Si<sub>1-x</sub>Ge<sub>x</sub>-nanosheets. Array of Ge-nanosphere/SiO<sub>2</sub>-shell/SiGe-nanosheet heterostructures was created in a self-organized, CMOS approach using the thermal oxidation of lithographically-patterned poly-Si<sub>0.85</sub>Ge<sub>0.15</sub> nanopillars over buffer layers of Si<sub>3</sub>N<sub>4</sub> on top of SOI substrates. With a polysilicon dummy-gate, source and drain self-align with the transparent ITO gate using a replacement-metal-gate process. Very high photocurrent gain, large photoresponsivity, as well as improved input capacitance and 3dB frequency were experimentally achievable in our photoMOSFETs. The pivotal roles of Ge-optical gate and SiGe-channel for large photoresponsivity and current gains were analyzed via numerical simulation.
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