Si MOSFETs Research Articles

Experimental analysis of phase shift modulation methods effects on EMI in dual active bridge DC-DC converter

Dual active bridge DC-DC converters (DAB) are one of the bidirectional converters and mainly used in electric vehicles and micro grids. With the increasing number of electric vehicles in use, and the increasing amount of batteries in these vehicles and rapidly spanning micro grids, the importance of DAB converters has increased and they are expected to be smaller in size and operate at higher power levels. The reduction in size has increased the importance of power density and efficiency, which are two significant parameters of DAB circuits. One of the methods to increase efficiency and power density is to increase the switching frequency. However, with the increase at the switching frequency, electromagnetic interference (EMI) in the DAB circuit also increases.In this manuscript, the change in the EMI values emitted by conduction, according to the phase shift modulation methods at DAB converters are evaluated. Also the effect of type of MOSFETs on conducted EMI is examined. Prototypes of the DAB converters by using Si and SiC MOSFETs with power rating of 1 kW are designed and developed. Switching frequency of converter is 25 kHz and leakage inductance is determined 81uH and 75uH. Si based circuit is operated with %88.5 efficiency. SiC based circuit is also operated with %88 efficiency. The designed circuits are operated using the phase shift modulations SPS and DPS. Conducted emission noise emitted by these circuits are analyzed by dividing them into common mode and difference mode noises. It has been observed that the EMI value when using SPS method is 15–20 dBµV lower than the EMI when using DPS method. The relationship between the measured noises and the efficiency of the circuits was observed.

23.1: Controllable Growth of Conjugated Polymer Monolayer: from Field‐Effect Transistors to Integrated Circuits

The charge transport of planar organic field‐effect transistors (FETs) occurs in the nearest molecular layer to the dielectric layer. Therefore, organic monolayer FETs with two‐dimensional transport properties have been widely studied, and is considered to be promising for applications in bottom‐up integrated circuits. Based on the semiconducting polymer PffBT4T‐2DT, we fabricate the high‐performance monolayer FETs and unipolar inverters. Resultant polymer monolayer FETs exhibited excellent and uniform performance with a 107 on/off current ratio and ultra‐low leakage current with a magnitude of 10‐12 A. More importantly, the corresponding intrinsic gain of 1000 V/V is achieved, which surpass Si MOSFET. Zero‐VGS inverters based on these polymer monolayer FETs exhibit steep level transitions with a voltage gain of 70 V/V, which is among the record for inverters based on organic monolayer.

Examining the impacts of DM filters to PFC isolated Ćuk converter for DCM operation by comparing Si and SiC MOSFET

Examining impacts of differential mode (DM) filter topologies covering pi, LC with damping, LC, LCL filter through isolated Ćuk single phase PFC converter is realized in this paper regarding to power factor, THD and efficiency. Application of PFC isolated Ćuk converter is conducted with 42 kHz switching frequency and 50 W power. Each filter is modeled, designed, and applied experimentally via isolated PFC Ćuk converter. Average model derivation based on state-space, for DCM operation of input side inductor of isolated PFC Ćuk converter that is not introduced in literature is the main contribution of the paper. Second main contribution is to analyze filter types by linear methods for the transfer functions cascading the converter and filter transfer functions, which is not presented for PFC converters. It is also presented that solely LCL filter which is not analyzed for PFC converters in detail in literature, does not give desired results. So, increasing the effectivity of LCL filter, new filter structure LCL with parallel C filter is proposed and modeled in this paper. Thanks to the applications, presented results of LCL with parallel C filter is better than others with 4.9% current THD and ‘1’ power factor. Proposed LCL filter ensures 45% reduction of total inductor value, comparing to LC filter. Besides, LCL with C filter provides better control characteristics with maximum allowable gain for stability as 0.7585 higher than other topologies. Moreover, practical design methodology of filter types avoiding complex mathematical procedure is given in this paper. Applications with each filters provide THD requirements, obtained 4.9% as a best value, lower than IEC61000-3-2 standard. Maximum percentage improvement comparing to the IEC61000-3-2 is 27.5% for third harmonic. Furthermore, SiC and Si Mosfets are employed separately in the converter and compared by using each DM filters regarding to power factor, THD, efficiency through applications. As a result, better efficiency with SiC Mosfet as 83% and better THD with Si Mosfet as 4.9% are conducted.

A Single Phase GaN GITs-Based Bidirectional Multilevel Inverter for High Voltage Grid Tied Photovoltaic Power System

— In this article, a performance comparison has been conducted between Si MOSFETs, SiC MOSFETs, and Gallium nitride (GaN) GITs in single phase BSNPC inverter. The PSpice study shows that the All GaN GITs BSNPC inverter has the highest efficiency of 98.97% compared to all other power devices used in the simulations. Due to a low dead time of 50 ns, the THD in output voltage for the All GaN GITs BSNPC inverter has decreased by 10% compared to the All Si MOSFETs BSNPC inverter and by 0.5% compared to the All SiC MOSFETs BSNPC inverter. The operation of GaN GITs at 200 kHz resulted in a 63% reduction in output filter size compared to the operation at 10 kHz. The Gate Drive circuit for GaN GITs and its complete design is presented. The All GaN GITs BSNPC inverter laboratory prototype study shows that at 16 kHz, 700 W the maximum efficiency of 99.4% is achieved whereas at 64 kHz, 350 W the lowest efficiency of 98.7% is achieved. The performance of the two GaN GITs connected in series to make a single series bidirectional switch is very reliable and robust. When the switching frequency is increased from 16 kHz to 64 kHz at 700 W output power, the reduction in the output filter size is 35%. The reduction in THD in the output voltage is 8.3% for the GaN GITs when operated at 150 ns dead time compared to 1 μs dead time.

Conduction Mechanism and Influencing Factors of SiC MOSFET

With the rapid development of the microelectronics industry, power semiconductor devices are getting more and more attention from the industry. At the same time, discussions on the application of power semiconductor materials have never stopped. Over the years, SiC material has stood out because of its superior physical characteristics. Compared with traditional Si MOSFET technology, SiC MOSFET technology has better physical characteristics in some aspects and has a broader market prospect. This paper introduces the conduction mechanism of SiC MOSFET and its performance factors, and the volume effect, bias temperature instability, and threshold voltage drift of SiC MOSFET are discussed. This paper is helpful in understanding the broad application prospects of SiC MOSFET technology and the difference and reform between SiC MOSFET and traditional Si MOSFET.

The Performance Comparison of the SiC and Si Mosfets Used in the 3-Phase Brushless DC Motor Drives for Electric Vehicles

This study was carried out to compare the Si and SiC MOSFETs in the market used on motor driver circuits. A motor driver circuit is designed to run the brushless DC motors. Thanks to the semiconductors used in the driver circuit, the motor receives current as desired. While performing this task, the MOSFETs get hot and lose power. This situation changes according to the material structure used inside the MOSFETs. Hence, it is planned to compare Si MOSFETs that have been in the market for a long time and SiC MOSFETs that have been used recently under different loads and different temperatures circumstances. Si and SiC MOSFETs are placed in the motor driver circuit, which has the same structure in the simulation environment. The operation of the motor under no load and on different mechanical loads has been analysed. In these cases, the response of the MOSFETs to temperature changes was also analysed by changing the cooling temperature. As a result of the study, SiC MOSFETs were less heated and less power loss was observed than Si MOSFETs. It has been observed that when the mechanical load is high, the switching speed of Si MOSFETs decreases despite the speed of SiC MOSFETs is not affected. As a result of this study, it has been observed that SiC MOSFETs used in the motor driver circuit work more efficiently than Si MOSFETs for electric vehicles.

Electro-Thermal simulation study of MOSFET modeling in Silicon and Silicon carbide

In this paper, a 2D electro-thermal coupling model of a MOSFET power device is presented using COMSOL Multiphysics software. The main objective of the model is to investigate and analyze the effect of temperature change on the electrical characteristics of a lateral MOSFET, visualize the heat distribution throughout the device, and calculate the peak temperature reached under extreme conditions. Thus, a comparison study is performed between Si and 6H-SiC based devices to highlight the effect of device material on its performance. The temperature distribution and the maximum temperature reached in both Si and 6H-SiC MOSFETs evaluate the reliability of the power component. The obtained results reveal lower drain currents and hot spot temperature values  lower in 6H-SiC MOSFET.

Thermally Stable Single-Transistor Neuron for Reliable Neuromorphic System

A thermally stable single-transistor neuron (1T-neuron) that uses a vertical nanowire Si MOSFET is demonstrated. The concept of a single-transistor latch (STL) in a MOSFET, which is used to mimic neural firing in a biological neuron, is sensitive to the temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> ) because it generally occurs due to impact ionization (I.I.). As an alternative to the thermally sensitive I.I., thermally insensitive band-to-band tunneling (BTBT) is used to enable the STL to function. Neuronal operation with thermal stability is thereby achieved. It is verified in spiking neural network (SNN) simulations that the recognition ability of handwritten digits in the MNIST dataset was not sensitive to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> .

(Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications.

Gallium Nitride has been proven to be a superior material system for high performance, reliable, high power transistors enabling high efficiency in power conversion applications [1,2]. In this paper we highlight some recent advances in GaN technology which expand the capabilities and applications of GaN power switches.Transphorm, Inc, is a pioneer and leader in GaN power electronics with a wide product portfolio of products spanning <100W to >10kW applications with JEDEC and AEC-Q101 qualified products including qualified 650V and 900V products (Fig. 1), as well as demonstrated 1200V devices in development. Transphorm’s vertical integration allows for control over device design, GaN epitaxial growth, and device fabrication resulting in industry leading performance and reliability.Transphorm’s breadth of volume production applications from 45 W through 10 kW is in part due to its impressive Failure in Time (FIT) rate of < 0.3 failures per billion hours is based on Field Reliability Data collected over 40 billion hours.[3]Transphorm’s normally-off devices are built by combining a state-of-the-art high voltage (HV) GaN HEMT with a low voltage (LV) Silicon MOSFET into a cascode GaN FET configuration to offer superior reliability, performance, and ease of use. The LV Si MOSFET features low gate charge and high threshold voltage which makes for a very easy to drive switch with a large gate voltage drive margin and the HV GaN HEMT offers high performance due to the superior material and transport properties of GaN combining the best of both materials.The latest GenV 15 mΩ 650V SuperGaN® FET (TP65H015G5WS) is the lowest Ron packaged GaN FET in the market enabling >10kW output powers with a single switch [4]. Inductive switching waveforms in a half-bridge at 400 V/65 A for the SuperGaN FET and SiC MOSFET were compared (Fig. 2) and the GaN device delivered current and voltage switching speeds of 4 kA/μs and 60 kV/μs which is about 2x faster than that of the SiC MOSFET, resulting in a 50% reduction in switching loss.To assess the performance of the SuperGaN FET vs similarly rated SiC MOSFETs and SiC JFETs, the devices were configured into a 240V:400V boost converter operating at 70kHz (Fig. 3). The GaN FET based boost converter was able to operate up to 12kW of output power with a maximum junction temperature of just 139 oC while the SIC MOSFET and JFET boost converters were limited 11kW and 9.2kW respectively due to junction temperature reaching 165oC. At 9.2Wk output power, the SuperGaN FET power loss was 38% and 21% lower than the loss in the SiC JFET and SiC MOSFET respectively. This combination of lower temperature and higher output power demonstrates the importance of the high efficiency of the SuperGaN FET.The unparalleled efficiency of Transphorm’s SuperGaN FETs has enabled to the development of unique products such as a 3KVA datacenter UPS released by and industry leading supplier, which is the smallest, lightest, and most powerful 3KA datacenter UPS on the market with 93.3% peak efficiency and 2.5x higher power density which enabled the form factor to shrink form a 2U to 1U enclosure.Until recently, commercial GaN power electronic devices have only available up to 650V with Transphorm’s qualified 900V GaN FET (TP90H050WS) device being the exception. We have recently announced a breakthrough in GaN technology with the demonstration of a 1200V, 70mΩ lateral GaN FET in a TO-247 packageThe 1200V GaN FET achieved > 99% peak efficiency in a 450V:900V synchronous boost converter operating at 50kHz which is similar to the peak efficiency of our 650V Gen IV and Gen V products. Additionally, the 1200V GaN FET achieved higher efficiency than a similarly rated state-of-the-art 1200V SIC MOSFET in a 900V:450V buck converter at 100kHz and 5.5kW (Fig 4) demonstrating GaN can excel in 1200V applications [5].[1] Y.F. Wu, J. Gritters, L. Shen, R.P. Smith, J. McKay, R. Barr, R. Birkhahn, “Performance and robustness of first generation 600-V GaN-on-Si power transistors”, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 6-10, Oct, 2013.[2] Parikh, Y.F. Wu, L.K. Shen, "Commercialization of High 600V GaN-on-Silicon Power Devices", Materials Science Forum, Vols. 778-780, pp. 1174-1179, October 2014. [3] https://www.transphormusa.com/en/gan-technology/#quality-reliability [4] C. J. Neufeld, Y.-F. Wu, S. Wienecke, R.P. Smith, Y. Huang, M. Kamiyama, J. Ikeda, T. Hosoda,B. Swenson and R. Birkhahn, “650V/780A GaN Power HEMT Enabling 10kW-Class High-efficiency Power Conversion”, IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, 7-11 Nov. 2021.[5] Gupta, et al. IEEE International Symposium on Power Semiconductor Devices 2022 (accepted for publication) Figure 1

Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance

The reliability and robustness of power devices are key areas of research for increasing the adoption of wide bandgap power semiconductors. This paper benchmarks the robustness under short-circuit (SC) and unclamped inductive switching (UIS) of 650 V SiC trench MOSFETs, SiC planar MOSFETs and silicon super-junction MOSFETs. The performance is characterised at 75 °C and 150 °C and the results show that the SiC MOSFETs have reduced temperature sensitivity under both SC and UIS conditions, which will be beneficial from the application point of view. In the case of the silicon MOSFET, increasing the temperature enhances the short-circuit withstand time as the peak short-circuit current is reduced. The opposite trend is observed for UIS, with a reduction of robustness as the temperature is increased. The absolute SC and avalanche energies are lower for the SiC MOSFETs, but if the chip areas are considered, the energy densities are higher in the SiC MOSFETs, with the SiC Trench having a superior critical SC energy and the SiC planar having a higher avalanche energy density. The higher critical SC and UIS energy densities in SiC MOSFETs, together with their higher thermal resistances result in higher peak junction temperatures and clear hotspots are identified using Finite Element simulations.

What Is Next for Automotive Electronics? [Automotive Electronics

The automotive industry is experiencing a remarkable move from the internal combustion engine (ICE) to an all-electric power platform. This natural shift is essentially supported by electric drive development where wide-bandgap (WBG) materials are at the center of this transformation. The shift to gallium nitride (GaN)- or silicon carbide (SiC)-based power electronics is taking place due to the theoretical limits of Si MOSFETs that has been reached by the industry for many power systems. Battery charging is maybe the first high-volume market to demonstrate GaN adoption, and SiC devices are now increasingly used in high-voltage power converters with stringent size, weight, and power requirements <xref ref-type="bibr" rid="ref1" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1]</xref> . Definitively, EVs are considered the heart of the global push toward a more sustainable future.

Comparative analysis of dual active bridge dc–dc converter employing Si, SiC and GaN MOSFETs for G2V and V2G operation

Electric vehicles (EVs) are ideally suited for carbon footprint reduction and energy-efficient transportation. EV battery chargers comprise of cascade connection of ac–dc and dc–dc converters. With the bidirectional dc–dc converters, EV chargers can implement grid-to-vehicle (G2V) and vehicle-to-grid (V2G) functionality. Dual active bridge (DAB) converter is a bidirectional dc–dc converter that can support G2V and V2G operation. DAB converters are operated at high switching frequencies (fsw) leading to higher switching loss. This issue can be addressed by employing SiC and GaN-MOSFETs, which work with lesser switching losses and can operate at much higher fsw. This paper presents a detailed comparative analysis of DAB converter employing Si, SiC and GaN MOSFETs for G2V and V2G operation. The EV charging system with a DAB converter employing V2G and G2V operation is modeled in PSIM software. Single phase shift (SPS) modulation technique is employed for DAB converter. The system operation is analyzed for V2G and G2V operation with the fsw of 20 kHz, 50 kHz, 100 kHz and 200 kHz. The performance comparison reveals that DAB converter with GaN-MOSFETs has the highest operating efficiency. To validate the DAB operation with SPS modulation, experimental studies have been carried out with SPS modulation being implemented on TMS320F28335 DSP using SimCoder Module of PSIM. A step-by-step procedure to implement the modulation technique with SimCoder is also provided.

An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A–40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.

Performance Evaluation of Silicon and GaN Switches for a Small Wireless Power Transfer System

In the last few years, the wide diffusion of rechargeable devices has fueled the research interest in wireless power transfer (WPT) technology that offers advantages such as safety, flexibility, and ease of use. Different standards have been developed over the years but a significant part of the global interest is focused on the inductive resonant wireless power transfer. By increasing the resonance frequency, an improvement in the transfer efficiency between transmit and receive coils is generally observed, at the expense, however, of an increase in losses in the switching devices that constitute the transmitting and receiving circuits. This study concerned the performance evaluation of a WPT transmitting circuit built using Gallium Nitride (GaN) or conventional silicon (Si) switching devices, to assess their specific contribution to the overall efficiency of the system. The overall performance of two circuits, respectively based on GaN HEMTs and Si MOSFETs, were compared at frequencies of the order of MHz under different operating conditions. The theory and design choices regarding the WPT circuit, the coils, and the resonant network are also discussed. The comparison shows that the GaN circuit typically performs better than the Si one, but a clear advantage of the GaN solution cannot be established under all operating conditions.

Current source gate drivers for 3-phase VSI operated in small-scale wind turbine systems

The paper is dedicated to the improvement of efficiency of small-scale wind turbines’ (SSWT) power electronic converters. An efficiency of the 3-phase voltage source inverter that operates with low output voltage (<60 V) and high grid-side input voltage (380 V) is investigated. Such a solution allows skipping the intermediate DC/DC boost converter and thus reducing conversion losses and complexity of a system. The inverter has to oaperate with low duty cycles, which, in turn, demands increasing of switching speed and thus requires application of advanced transistors. To evaluate the switching performance, studies were carried out with various types of switches, namely Si IGBT, Si MOSFET, Cascode SiC JFET, SiC MOSFET using classic gate drivers and proposed current source drivers. Detailed switching waveforms were obtained using the double pulse method and analyzed for each type of the switch. The switching speed was assessed and losses were evaluated. Two types of transistors were selected for testing in the VSI paired with an EMRAX 228 generator. Inverter efficiency data was obtained and analyzed for two types of transistors/drivers and the speed-torque curve applicable for a 3 kW turbine. It is shown that the suggested solution improves the efficiency of SSWTs’ inverters.

Study on amplitude of the noise power spectrum for nano-strained Si NMOSFET

Based on the micro-transport mechanism of total dose to nano-strained Si MOS device, the trapped charge is calculated. By solving the two-dimensional Poisson equation, the channel surface potential is obtained, and the influence of the second-order effect is considered. The bandgap narrowing effect and the short channel effect are considered to obtain high-precision-strained Si threshold voltage of the nano NMOS device.. According to the noise power spectrum amplitude defined in the invention, the trap charge and threshold voltage models are calculated in the invention. The analytical model of correlation between the trap charge of strain Si MOSFET and the amplitude of 1/f noise power spectrum under the total dose effect is derived. The analytical model of correlation between trap charge and 1/f noise power spectrum amplitude constructed by the invention has a simple form, clear physical meaning and high calculation accuracy, which provides a feasible theoretical basis for irradiation reliability and circuit application of strained Si-integrated device.

Enhanced breakdown voltage of Si-GaN monolithic heterogeneous integrated Cascode FETs by the device structure design

In this work, the factors affecting the breakdown voltage of Si-GaN monolithic heterogeneous integrated Casccode FET fabricated by transfer printing were investigated. These two factors are the avalanche breakdown resistance of the Si device and the thickness of SiN electrical isolation layer. Two kinds of device structures, Si MOSFET and Si laterally-diffused MOSFET (LDMOSFET), were designed to study the effect of the avalanche breakdown resistance of the Si devices on the breakdown characteristics of Cascode FET. The effect of the thickness of SiN electrical isolation layer was analyzed. Finally, the breakdown voltage of monolithic integrated Cascode FET reached 770 V.

Operation and Efficiency Analysis of a Five-Level Single-Phase Hybrid Si/SiC Active Neutral Point Clamped Converter

The ability to improve both the size and efficiency of multilevel single-phase converters is a key to uplift them as an attractive solution for industries, while the high number of switches and complex modulation techniques understandably make them unattractive. Five-level active neutral point clamped (ANPC) converter, due to its inherent advantages such as employing different switching frequencies and using different switch technologies, presents an ideal candidate for study. This article performs a comprehensive analysis of the converter to highlight the advantages of it. This analysis results in a modified hybrid modulation that effectively regulates the neutral point (NP) of the dc link. Consequently, the combination of the topology and the modified modulation make the converter ideal to utilize two different switch technologies—in this article, silicon carbide (SiC) and Si MOSFET. To evaluate the analysis and the effectiveness of modulation, a 2-kW hybrid five-level ANPC is built. The converter current behavior is analyzed to determine the power loss in the filter and switches. The efficiency measurement is performed and compared with the calculated efficiency. There is a close coherency between the measurement and the calculated results and a peak efficiency of 98.4% is achieved.

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors

The severe scattering at metal-oxide-semiconductor (MOS) interfaces, manifesting as carrier mobility declining, is always a puzzle in the field of Si-based field-effect transistors (FETs) towards high-performance devices. In this work, an elaborate study on interfacial scattering suppression through process optimization is reported. Dry oxidation is proved to be more efficient in the construction of a damage-free oxide/semiconductor interface. Meanwhile, a thick thermal-SiO2 interlayer (i.e. a long growth time), together with a long-duration post-annealing treatment, is beneficial for interface planarization. Such an interface roughness scattering control, combined with Coulomb and defect scattering restrictions, can be realized with an optimized FET process flow. On this occasion, the as-fabricated Si MOSFETs show a higher gate-controlled drain current, and are with a peak electron mobility of ∼8372 cm2 V−1 s−1 at 1.6 K. Moreover, confined magnetotransport properties of two-dimensional electron gas are further revealed by the integer quantum Hall effects. Notably, our work presents a feasible integration flow to fabricate high-mobility Si MOS devices via scattering suppression, which may promote the evolution of Si-based MOS quantum dots for potential solid-state quantum computing.