23.1: Controllable Growth of Conjugated Polymer Monolayer: from Field‐Effect Transistors to Integrated Circuits

Abstract

The charge transport of planar organic field‐effect transistors (FETs) occurs in the nearest molecular layer to the dielectric layer. Therefore, organic monolayer FETs with two‐dimensional transport properties have been widely studied, and is considered to be promising for applications in bottom‐up integrated circuits. Based on the semiconducting polymer PffBT4T‐2DT, we fabricate the high‐performance monolayer FETs and unipolar inverters. Resultant polymer monolayer FETs exhibited excellent and uniform performance with a 107 on/off current ratio and ultra‐low leakage current with a magnitude of 10‐12 A. More importantly, the corresponding intrinsic gain of 1000 V/V is achieved, which surpass Si MOSFET. Zero‐VGS inverters based on these polymer monolayer FETs exhibit steep level transitions with a voltage gain of 70 V/V, which is among the record for inverters based on organic monolayer.