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Abstract
The automotive industry is experiencing a remarkable move from the internal combustion engine (ICE) to an all-electric power platform. This natural shift is essentially supported by electric drive development where wide-bandgap (WBG) materials are at the center of this transformation. The shift to gallium nitride (GaN)- or silicon carbide (SiC)-based power electronics is taking place due to the theoretical limits of Si MOSFETs that has been reached by the industry for many power systems. Battery charging is maybe the first high-volume market to demonstrate GaN adoption, and SiC devices are now increasingly used in high-voltage power converters with stringent size, weight, and power requirements <xref ref-type="bibr" rid="ref1" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1]</xref> . Definitively, EVs are considered the heart of the global push toward a more sustainable future.
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