Abstract
Based on the micro-transport mechanism of total dose to nano-strained Si MOS device, the trapped charge is calculated. By solving the two-dimensional Poisson equation, the channel surface potential is obtained, and the influence of the second-order effect is considered. The bandgap narrowing effect and the short channel effect are considered to obtain high-precision-strained Si threshold voltage of the nano NMOS device.. According to the noise power spectrum amplitude defined in the invention, the trap charge and threshold voltage models are calculated in the invention. The analytical model of correlation between the trap charge of strain Si MOSFET and the amplitude of 1/f noise power spectrum under the total dose effect is derived. The analytical model of correlation between trap charge and 1/f noise power spectrum amplitude constructed by the invention has a simple form, clear physical meaning and high calculation accuracy, which provides a feasible theoretical basis for irradiation reliability and circuit application of strained Si-integrated device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
