Properties Of Semiconductors Research Articles

Investigation of thermoelectric properties of high concentration PEDOT: PSS inks doped with graphene and multi-walled carbon nanotubes

The use of wearable technologies in various aspects of life, particularly in health and entertainment, is experiencing a remarkable increase. This intensity of usage brings with it the energy needs of these devices. Polymer-based thermoelectric generator solutions are one of the most emphasized issues in energy harvesting applications and stand out as a solution method. In this study, we introduce a high-concentration poly(3,4-ethylenedioxy-thiophene): polystyrene sulfonate (PEDOT: PSS)-based conductive polymer ink, which has been doped with graphene and multi-walled carbon nanotubes (MWCNT) for thermoelectric applications. We also explore the film properties derived from this ink. The fabrication process involves cryogenic freezing, lyophilization, and re-dispersion of a mixture of water and dimethyl sulfoxide (DMSO) with a commercial PEDOT: PSS aqueous solution, followed by the addition of specific additives. These added compounds have led to a significant increase in electrical conductivity, resulting in materials with high electrical conductivity levels ranging from 100 to 200 S/cm. Remarkably, even after subjecting the material to 100 bending cycles, no significant change in electrical conductivity was observed. All the materials produced exhibited p-type semiconductor properties, and the high concentration of PEDOT: PSS, along with the addition of graphene and multi-walled carbon nanotubes, notably enhanced the Seebeck coefficient, reaching a maximum of 25 μV K⁻1.

Thermal transport of defective β-Ga2O3 and B(In)GaO3 alloys from atomistic simulations

β-Ga2O3 is a new generation of semiconductor material with a wide bandgap of 4.9 eV. However, the β-Ga2O3 devices inevitably produce defects within them after irradiation, leading to changes in their thermal conductivities. At present, the effect of radiation-damage-induced defects on thermal conductivity of β-Ga2O3 has not been carried out. Herein, we have employed molecular dynamics simulations to investigate the impact of defects on the thermal transport of β-Ga2O3, and the obtained thermal conductivity of non-defect β-Ga2O3 is in good agreement with recent reports. Our findings indicate that the thermal conductivity of β-Ga2O3 at room temperature exhibits a consistent decrease with an increase in the concentration of Ga vacancies, but shows a decreasing and then increasing trend as the number of O vacancies increases. In addition, doping/alloying is found to improve the irradiation resistance of β-Ga2O3 based on reported defect formation energy calculations, so the mechanism of alloying effect on the thermal conductivity is deeply analyzed through first-principles calculations. Moreover, the lattice thermal conductivities of ordered InGaO3 and BGaO3 alloys are predicted by solving the phonon Boltzmann transport equation. The obtained results that κ(Ga2O3) = κ(BGaO3) > κ(InGaO3) are attributed to the combined effect of volume, specific heat capacity, group velocity, and phonon lifetime of the three materials. This work can help to disclose the radiation damage influence on thermal properties of β-Ga2O3 semiconductors.

Anisotropy of Anion Diffusion in All-Inorganic Perovskite Single Crystals.

Ion diffusion is a fundamentally important process in understanding and manipulating the optoelectronic properties of semiconductors. Most current studies on ionic diffusion have been focusing on perovskite polycrystalline thin films and nanocrystals. However, the random orientation and grain boundaries can heavily interfere with the kinetics of ion diffusion, where the experimental results only reveal the average ion exchange kinetics and the actual ion diffusion mechanisms perpendicular to the direction of individual crystal facets remain unclear. Here, the anion (Cl, I) diffusion anisotropy on (111) and (100) facets of CsPbBr3 single crystals is demonstrated. The as-grown single crystals with (111) and (100) facets exhibit anisotropic growth with different halide incorporation, which lead to different resulting optoelectronic properties. Combined experimental characterizations and theoretical calculations reveal that the (111) CsPbBr3 shows a faster anion diffusion behavior compared with that of the (100) CsPbBr3, with a lower diffusion energy barrier, a larger built-in electric field, and lower inverse defect formation energy. The work highlights the anion diffusion anisotropic mechanisms perpendicular to the direction of individual crystal facets for optimizing and designing perovskite optoelectronic devices.

Effect of uniaxial compressive strain on the thermoelectric properties of two-dimensional HfNF

Two-dimensional transition metal nitride halides have shown promise in thermoelectric applications due to their low dimensionality, excellent electron transfer properties, and quantum confinement of carriers. This study focuses on investigating the impact of uniaxial compressive strain on the stability, electronic and thermoelectric properties of monolayer HfNF through first-principles calculations. The research findings reveal that the semiconductor properties of monolayer HfNF remain unchanged under various strain conditions. Furthermore, the thermoelectric properties of monolayer HfNF materials are examined using Slack model and the Boltzmann transport theory under different strain conditions. The findings indicate that applying uniaxial compressive strains at temperatures of 500 K, 700 K, and 900 K increase the Seebeck coefficients of n-type and p-type HfNF, resulting in an enhanced power factor for the material. Specifically, the power factor of p-type HfNF under uniaxial compressive strain increased by 83%, with the ZT value reaching 2.01 at 900 K, which is approximately 40% higher than the ZT value without strain. These results suggest that strain can be utilized as a modulation method to enhance the thermoelectric properties of materials. Moreover, the study suggests that two-dimensional HfNF holds great promise for thermoelectric applications when subjected to uniaxial compressive strain.

Achieving the conversion from Room-Temperature phosphorescence to photothermal properties by Carbon-Regulated bandgap

Bandgap tunability plays an important role in controlling the photophysical properties of semiconductor material. In this work, we propose a powerful carbon component engineering strategy for regulating the optical bandgap of scandium/cysteine functional materials (Sc/Cys-FMs) that are synthesized by a facile one-pot hydrothermal method. The band structure of Sc/Cys-FMs is closely related to the Cys ligands. As Cys amount rises, the obtained Sc/Cys-FMs exhibit the red-shifted room-temperature phosphorescence (RTP) emission from Sc/Cys-FMs-50 (3.01 eV) to Sc/Cys-FMs-150 (2.14 eV), accompanied by a decrease in quantum efficiency and an increase in lifetime. Meanwhile, the Sc/Cys-FMs show a unique time-dependent phosphorescence color (TDPC) phenomenon, with a dynamic transition of RTP color from yellow to green as the decay time prolongs because of the emission-dependent lifetime. As the amount of Cys further increases, the bandgap can be continuously reduced to 1.88 eV (Sc/Cys-FMs-300) and 1.56 eV (Sc/Cys-FMs-600), causing the quenching of RTP emission and significantly enhanced photothermal properties. The continuously decreasing bandgap has been proven to be directly ascribed to the increase of carbon component in Sc/Cys-FMs. Considering the TDPC properties, Sc/Cys-FMs can be well used for dynamic phosphorescent anti-counterfeiting. This work not only develops a scalable method for preparing functional materials with superior RTP and photothermal properties, but also proposes the carbon component engineering strategy to achieve bandgap tunability of materials.

Probing the impact of Ba on properties of ZnO at the nanoscale: optical, dielectric and antibacterial activity evolution

The sol–gel dip coating technique was used to manufacture undoped and Barium doped zinc oxide thin films. Doping is extensively used to refine semiconductor properties. Without and with varying ratios of Ba 1–9 wt% dopant, ZnO thin films have been manufactured. The effect of Ba on the dielectric, structural, antibacterial, optical and morphological characteristics of ZnO was investigated. The optical properties demonstrate that the bandgap of the pure ZnO thin film is higher than that of Ba-doped ZnO films, which is beneficial for improving solar cell performance. According to the XRD data, all films of ZnO have hexagonal wurtzite structures According to XRD structural analysis; the incorporation of Ba lowers the crystallinity of ZnO thin films by reducing the crystallite size. The Ba doping changes the surface roughness and morphology. The hopping process defines the dielectric characteristics that follow Koop’s theory as well as the Maxwell–Wagner model. A lower dielectric constant makes it ideal for high-frequency devices. These films exhibit ferromagnetism. Barium-doped zinc oxide photocatalyst could successfully decompose methylene blue dye by making it suitable for wastewater treatment. Ba doping effectively kills both gram-negative and gram-positive bacteria. They have antimicrobial applications in the food industry and biomedicine.

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization.

Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3-PbTiO3, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit.

MXene-enhanced multi-phonon resonance Raman scattering of ZnS for sensitive and reliable glioma detection

Multi-phonon resonance Raman scattering (MRRS) has shown significant promise in clinical diagnosis and medical research. However, the limited intensity of MRRS signal has impeded its advancement and practical application. Herein, Ti3C2Tx MXene was employed to composite with ZnS and amplify the MRRS signal of ZnS, resulting in an impressive enhancement factor of up to 1.5 × 107. This ZnS/Ti3C2Tx MXene composites was subsequently utilized as bioprobes for the highly sensitive and reliable detection of glial fibrillary acidic protein (GFAP), achieving a limit of detection (LOD) of 104.4 ag mL−1 with a linear range spanning from 1 fg mL−1 to 10 ng mL−1. This represents a three-order decrease in the LOD and an extension of the linear range by three orders of magnitude compared to that of ZnS bioprobes. The successful detection of serum GFAP further validates the clinical potential of this technique. This work introduces a novel strategy for effectively enhancing MRRS. It also provides a method for the adjustment of semiconductor electron-phonon coupling property and thus hopefully in the improvement of optoelectronic performance.

Effect of O-doping on electronic and optical properties of monolayer MoSe2 under shear deformation.

In this study, the electronic structures and optical properties of the pure MoSe2 and O-doped MoSe2 systems under different shear deformations are calculated based on the first-principles approach. It is hoped to provide new possibilities for the design of novel controllable optoelectronic devices and to provide guidance for the application of MoSe2 in the field of optoelectronic devices. The findings indicate that both pure MoSe2 and O-doped MoSe2 systems are somewhat impacted by shear deformation. The pure MoSe2 undergoes a transition from direct to indirect and then to direct bandgap under shear deformation, but still maintains the semiconductor properties. The bandgap of the doped system changes from a direct to an indirect bandgap at 8% shear deformation. According to the examination of the density of states, we find that the density of states of the pure MoSe2 system is mainly contributed by the Mo-d and Se-p orbitals, and the total density of states of the system after O-atom doping mainly originates from the results of the contributions of the Mo-d, Se-p, and O-p orbitals. Optical property analysis reveals that the conductivity and peak value of the pure MoSe2 system are gradually red-shifted toward the low-energy region with the increase of shear deformation. The dielectric function of the O-doped MoSe2 system is red-shifted in the region of 6~10% shear deformation, and the degree of red-shift rises with deformation amount. The findings demonstrate that the electrical structure and optical characteristics of the O-doped MoSe2 system may be modulated effectively by shear deformation, providing a theoretical foundation for expanding the usage of MoSe2 materials in the field of optoelectronic devices. This study is founded on the CASTEP module in the Materials-Studio software within the first-principles of the density-functional theory framework. The photoelectric properties of the intrinsic and doped systems under shear deformation are calculated using the Perdew-Burke-Ernzerh (PBE) of generalized function under the generalized gradient approximation (GGA). The Monkhorst-Pack special K-point sampling method is used in the calculations, and a 5 × 5 × 1 K-point grid is used for the calculations with a plane-wave truncation energy of 400 eV in the optimization of the structure of each model. After geometrical optimization, the energy convergence criterion for each atom is 1 × 10-5 eV/atom, the force convergence criterion is 0.05 eV/Å, and a vacuum layer of 20 Å in the c-direction is set.

Reconfigurable multifunctional neuromorphic memristor fabricated from two-dimensional ReSe2 ferroelectric nanosheet films

Memristor-based neuromorphic computing is beneficial for artificial intelligence to process external information autonomously with high speed and high efficiency. Two-dimensional (2D) layered van der Waals rhenium selenide (ReSe2) has optoelectronic and semiconductor properties, but its ferroelectricity has not been confirmed fully experimentally and the application exploration is currently limited. Here, we experimentally confirmed the room-temperature ferroelectricity of 2D ReSe2 and proposed a reconfigurable ReSe2 memristor that can realize multiple functions. The device can realize the conductance bidirectional regulation, and under the action of electrical signals, it exhibits the high 0.99 and 0.98 linearity and accurate bidirectional update of weights. Under the complementary effect of ReSe2 ferroelectric polarization flipping and interface defects, the device exhibits the memcapacitor and memristor reconfigurable behavior and multiple functions such as visible light perception, logical “OR” calculation, and long/short-term synaptic plasticity. In addition, the six-layer convolutional neural network built based on ReSe2 memristors can perform feature extraction and classification recognition of handwritten digital pictures, and its recognition accuracy can reach 97.04%. In addition to obtain substantial experimental evidence for the ferroelectricity of 2D ReSe2, this work also provides a new avenue for the implementation of ReSe2 ferroelectric memristors in the neuromorphic computing system with the front-end sensing and back-end processing.

First-principles study of the electronic and optical properties of Nb-doped MoSe2 by tensile strain

A first-principles method was used to explore the influence of tensile strain on the electrical and optical characteristics of Nb-doped MoSe2. The tensile strain has been discovered to have a higher influence on the electrical structure of the Nb-doped MoSe2 system than pure monolayer MoSe2. According to the energy band structure study, the pure monolayer MoSe2 is a direct bandgap semiconductor, but the system doped with Nb instead of Mo atoms is a p-type-doped semiconductor. The bandgap of the Nb-doped MoSe2 system decreases gradually with the increase of tensile strain, but still maintains the p-type semiconductor properties, and the bandgap of the pure monolayer MoSe2 also decreases gradually with the increase of tensile strain. From the density of states analysis, it is found that for the total density of states of the doped system at different tensile strains, it is mainly contributed by the Mo-4d and Se-4p orbitals. The optical properties analysis showed that the doped system under tensile strain had higher absorption coefficient and reflectance peak than the Nb-doped MoSe2 system without tensile strain. Additionally, the doped system showed redshift phenomenon in both the absorption and reflection peaks as the tensile strain increased.

An Overview of the Copper Oxide Nanofillers Integrated in Food Packaging Systems

Recently, functional nanomaterials with unique sizes, shapes, and surface chemistry have been fabricated for various applications in all facets of science and technology. Among these diverse nanomaterials, copper oxide nanoparticles (CuO NPs) have garnered considerable attention due to their unique physicochemical parameters and semiconductor properties. Doping various functional materials in CuO NPs and the fabrication of CuO nanofillers functionalized with natural or synthetic moieties delivers improved antibacterial efficacy in food packaging applications. Moreover, the bactericidal effect of modified CuO NPs against foodborne pathogens largely contributes to their usage in food packaging technology. Therefore, it is essential to fabricate effective antimicrobial CuO nanofillers with minimal or no adverse side effects. This review discusses the synthesis, characterization, surface modification, antibacterial properties, food packaging applications, and toxicological implications of the diverse CuO nanofillers integrated in films and composites. In addition, it highlights their adverse side effects and ways to combat adverse situations. The forthcoming generation is expected to lead a groundbreaking surge of inventive food packaging systems (FPS) based on CuO hybrid nanofillers in food packaging industries.

Manipulable ferromagnetic properties and half-metallic behavior in hole-doped PbClI monolayer: A DFT study

The remarkable performance exhibited by two-dimensional (2D) materials holds tremendous promise for transformative applications in the domains of electronics and spintronics. This study through first-principles calculations presents a systematic investigation of the novel 2D material PbClI monolayer. It is found that the PbClI monolayer exhibits desirable semiconductor properties, characterized by a large gap of 3.75 eV. Furthermore, it has been observed that mechanical strain can effectively tune this bandgap. Importantly, due to its unique flat valence band edge, hole doping in PbClI gives rise to pronounced features of ferromagnetism and half-metallicity, and hole doping levels can effectively tune its magnetic properties, including magnetic coupling strength, easy magnetization axis, and Curie temperature. In addition, PbClI monolayer shows outstanding multidirectional piezoelectricity. The calculations serve as a pivotal theoretical framework for the realization of stable magnetism in 2D materials.The study uncovers the vast possibilities in PbClI monolayer to position it as a potential candidate in the domains of spintronics and optoelectronics.

Structure and electrical properties of double-walled silicon nanotubes depending on 585 defects and applied electric fields by SCC-DFTB method

The geometric structural and electronic properties of 585 defective double-walled silicon nanotubes (DWSiNTs) by using the self-consistent charge density functional tight-binding (SCC-DFTB) method. Furthermore, we investigated the impact of external electric field and intensity on the electronic properties. After the relaxation of perfect tubes, the structure of the tube changes significantly, and the winding direction of the tube wall changes. The buckling value of the tube wall is most closely related to the geometric shape and atomic arrangement order of tubes. The overall stability of zigzag tubes is higher than armchair tubes, and (6,6)@(10,10) stability is significantly affected by defects. The partially defected zigzag tubes change from direct band gap semiconductor properties to indirect band gap semi-metal properties. A transformation of the semiconductor-semimetal properties, direct-indirect band gap of DWSiNTs is realized. The charge transfer amplitude of the defect tubes is greater than the perfect tube. The applied electric field makes the stability of all tubes decrease linearly, and the stability of the defect tubes is higher than the perfect tube. Part of the electric field strength changes the defect tubes from semiconductor properties to semi-metal properties, and semi-metal properties to metal properties. These theoretical studies provide a reference for the preparation and future application of DWSiNTs.

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10–3 to 103 cm2V–1s–1 and lifetimes varying between 10–9 and 10–3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

In situ decorated 2D vanadium disulphide on optimized reduced graphene oxide-based interface for highly sensitive nonenzymatic glutamate detection

2D layered transition metal dichalcogenides (TMDs) possess eccentric nanostructures, large surface areas, and unique semiconducting properties, making them exceptional for non-enzymatic applications compared to metal oxides. However, TMDs like vanadium disulfide (VS2), with peroxidase-like nanozymatic characteristics, suffer from limited electronic conductivity, restricting their use as electrochemical (EC) sensors. To address this, reduced graphene oxide (rGO) is introduced to enhance electronic conductivity and leverage the enzyme-like property of VS2. This study introduces a novel enzyme-free EC sensor, rGO/VS2 nanocomposite-based, for accurate and efficient glutamate (Glut) detection. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) demonstrated that rGO/VS2 electrodes with varying rGO to VS2 composition ratios exhibit superior EC properties compared to pure VS2 electrodes. The EC response of the rGO/VS2 modified electrode towards Glut was investigated using CV and differential pulse voltammetry (DPV). The fabricated electrode displayed a linear relationship with Glut concentration (4–300 μM) (normal levels 30–80 μM), boasting a low limit of detection (LOD) (0.056 μM) and higher sensitivity (0.797 μA/(mM·cm2)) compared to existing non-enzymatic Glut sensors. Structural and morphological characterizations employed Raman spectroscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDX). Furthermore, the proposed electrode's electroanalytical activity was assessed in spiked real samples, establishing its reliability and precision in Glut detection. The developed rGO/VS2-based EC sensor holds practical utility in biomedical research, clinical diagnostics, and environmental monitoring, where Glut detection is essential.

The study of electronic and optical properties of ZnO/MoS2 and its vacancy heterostructures by first principles

AbstractBased on the first principles calculation, the effects of vacancies on the structural, electronic and optical properties of ZnO/MoS2 heterostructure are investigated in this work. The results show that vacancies could exist stably in the heterojunctions and cause a significant decrease in bandgap. ZnO/MoS2 with an O vacancy maintains semiconductor property with a bandgap of 0.119 eV, while heterostructure with a Zn vacancy exhibits metallic characteristic. Furthermore, the absorption capability of defective heterojunctions has been extended to infrared light region with obvious redshift. To sum up, vacancy engineering effectively changes the electronic and optical properties of ZnO/MoS2 heterostructure, which provides a feasible approach for adjusting the optoelectronic properties of two‐dimensional heterostructures and broadening their application in functional nanoelectronic and optoelectronic devices.

In Situ Local Band Engineering of Monolayer Graphene Using Triboelectric Plasma.

Graphene, a promising material with excellent properties, suffers from a major limitation in electronics due to its zero bandgap. The gas molecules adsorption has proven to be an effective approach for band regulation, which usually requires a harsh environment. Here, O2 - ions produced with triboelectric plasma are used for in situ regulation of graphene, and the switching ratio can reach 1010. The O2 - ions physical adsorption will reduce the Fermi-level (EF) of graphene. As the EF of graphene is lower than the lowest unoccupied molecular orbital (LUMO) level of O2-, the adsorption of O2 - changes from uniform physical adsorption to local chemical adsorption, thereby realizing the semiconductor properties of graphene. The local graphene bandgap is calculated to be 83.4meV by the variable-temperature experiment. Furthermore, annealing treatment can restore to 1/10 of the initial conductance. The C─O bond formed by O2 - adsorption has low bond energy and is easy to desorb, while the C═O bond formed by adsorption on defects and edges has higher bond energy and is difficult to desorb. The study proposes a simple in situ method to investigate the microscopic process of O2 - adsorption on the graphene surface, demonstrating a new perspective for local energy band engineering of graphene.

Profiling Electronic and Phononic Band Structures of Semiconductors at Finite Temperatures: Methods and Applications

Semiconductor devices are often operated at elevated temperatures that are well above zero Kelvin, which is the temperature in most first-principles density functional calculations. Computational approaches to computing and understanding the properties of semiconductors at finite temperatures are thus in critical demand. In this review, we discuss the recent progress in computationally assessing the electronic and phononic band structures of semiconductors at finite temperatures. As an emerging semiconductor with particularly strong temperature-induced renormalization of the electronic and phononic band structures, halide perovskites are used as a representative example to demonstrate how computational advances may help to understand the band structures at elevated temperatures. Finally, we briefly illustrate the remaining computational challenges and outlook promising research directions that may help to guide future research in this field.

Optical, magnetic, and transport properties of two-dimensional III-nitride semiconductors (AlN, GaN, and InN) due to acoustic phonon scattering.

In this paper, the magneto-optical transport (MOT) properties of III-nitride Pöschl-Teller quantum well (QW) semiconductors, including AlN, GaN, and InN, resulting from the acoustic phonon interaction are thoroughly investigated and compared by applying the technique of operator projection. In particular, a comparison is made between the Pöschl-Teller QW results and the square QW ones. The findings demonstrate that the MOT properties of III-nitride QW semiconductors resulting from acoustic phonon scattering are strongly influenced by the quantum system (QS) temperature, applied magnetic field, and QW width. When the applied magnetic field and QS temperature increase, the absorbing FWHM in AlN, GaN, and InN increases; on the other hand, it diminishes when the QW's width increases. The absorbing FWHM in GaN is smaller and varies slower compared with AlN; inversely, it is larger and varies faster compared with InN. In other words, the absorbing FWHM in AlN is the largest and the smallest in InN. Compared to the square QW in AlN, GaN, and InN, the absorbing FWHMs in the Pöschl-Teller QW vary more quickly and have greater values. The absorbing FWHMs resulting from the acoustic phonon interaction in III-nitrides are strongly dependent on the nanostructure's geometric shape and parameters. Our findings provide useful information for the development of electronic devices.