Properties Of Semiconductors Research Articles

Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

This research presents a comprehensive comparative analysis of the passivation kinetics of OFP-Cu and OF-Cu in simulated repository electrolyte. The study employs a range of techniques, including potentiodynamic polarization, multi-step potentiostatic polarization, electrochemical impedance spectroscopy, and Mott-Schottky analysis, to explore the intricacies of corrosion behavior. The Point Defect Model (PDM) is used to interpret the steady-state physicochemical processes. Utilizing the results of PDM optimization, defect distribution diagrams within the passivation film were constructed, shedding light on the pivotal transition from p-type to n-type semiconductor properties of the film. The study concludes with an interpretation of the experimental data, highlighting the enhancement of copper's corrosion resistance due to phosphorus doping, as elucidated by the Solute-Vacancy Interaction Model.

Electronic Structures of Passive Film Formed on Ti and Cr in a Phosphate Buffer Solution of pH 7

The electronic structures, including the semiconductive properties, of the passive films formed on Cr and Ti in a phosphate buffer solution of pH 7 were evaluated using photoelectrochemical response, electrochemical impedance spectroscopy and X-ray photoelectron spectroscopy (XPS). Based on the results, electronic band structure models of the passive films were proposed: the passive films on Cr consisted of an inner p-type oxide layer with a band gap energy, E g, of 3.6 eV and an outer p-type hydroxide layer with E g of 2.5 eV whereas those on Ti consisted of an inner n-type oxide layer with E g of 3.2 eV and an outer n-type hydroxide layer with E g of 2.5 eV. The type of semiconductor evaluated for the oxide and hydroxide layers was strongly supported by valence-band XPS, which can provide the energy difference between the Fermi energy of the underlying metal and the highest energy of the valence bands of the oxide and hydroxide layers in the passive films.

Optimizing hexafluoro-2,4-pentanedione based Eu(III) complexes: A comprehensive study on the synthesis, spectroscopic characterization with Judd-Ofelt calculation

Utilizing Europium(III), compounds having eight-coordination geometry of the type [Eu(hfpd)3L2] and [Eu(hfpd)3Lʹ] were synthesized [hfpd = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, L = tri-octyl-phosphine oxide (TOPO) and Lʹ = 1,10-phenanthroline (phen), Neocuproine (neoc) and bathocuproine (bathoc)] and characterized through elemental, FTIR, CV and Proton-NMR techniques. Photoluminescent studies and quantum yield helped to understand the role of coordination environment and ligands on the emission intensity. Luminescence decay curves served as the basis for calculating the excited-state lifetimes of the synthesized complexes. JO parameters (Ω2, Ω4) and asymmetry ratio were also evaluated to study the coordination environment around the central metal ion. Solid-state complexes exhibited an intense, monochromatic bright red emission, as characterized by its Commission International de l’Eclairage (CIE) color coordinates. Owing to red luminescence and semi-conducting properties, these Eu(III) complexes can be employed as red-emitting material for fabricating lighting devices.

Applications of 2D semiconductor materials in electronics and optoelectronics

Due to the demand for the higher performance of electronic and optoelectronic devices, the research of 2D semiconductor materials is very important nowadays. Because of the excellent electronic and optoelectronic properties of 2D semiconductor materials can be applied in many fields. This article mainly introduced the preparation, properties and applications of 2D semiconductor materials. The applications in electronics and optoelectronics are mainly discussed, such logic gates, field effect transistors light emitting diodes and high responsivity photodetectors. Compared to traditional semiconductor materials, 2D semiconductor materials have higher mobility and energy efficiency, leading to higher responding speed and lower energy loss. The flexibility of these materials also makes wearable electronic devices possible. However, they are still short in stability and immature in preparation. Future studies should focus more on the stability and preparation of 2D semiconductor materials and9 make the massive production and application of such high-performance materials plausible.

Achieving Zero-Temperature Coefficient Point Behavior by Defect Passivation for Temperature-Immune Organic Field-Effect Transistors.

Organic field-effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature-immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature-sensitive. The zero-temperature coefficient (ZTC) point behavior can be used to achieve a temperature-immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, the Fermi pinning in OSCs is eliminated using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (VT) is negatively correlated with temperature. ZTC point behaviors in OFETs are achieved by compensation between VT and mobility at different temperatures to improve its temperature immunity. A temperature-immune output current can be realized in a variable-temperature bias voltage test over 50000s by biasing the device at the ZTC point. This study provides an effective solution for temperature-immune OFETs and inspiration for their practical application.

Investigating Stable Low-Energy Gallium Oxide (Ga2O3) Polytypes: Insights into Electronic and Optical Properties from First Principles.

This study provides a comprehensive analysis of the electronic and optical properties of low-energy gallium oxide (Ga2O3) polytypes not considered earlier. Among these polytypes, the monoclinic structure (β-Ga2O3) holds significant relevance for both research and practical applications due to its superior stability under typical conditions. The primary aim of this research is to identify new and stable Ga2O3 polytypes that may exist under zero-temperature and zero-pressure conditions. To achieve this objective, we employ the VASP code to investigate electrical and optical properties, as well as stability assessments. Additionally, we examine phonon and thermal properties, including heat capacity, for all polytypes. This study also encompasses the computation of full elastic tensors and elastic moduli for all polytypes at 0 K, with Poisson's and Pugh's ratios confirming their ductile nature. Furthermore, we present the first ever report on the Raman- and infrared (IR)-active modes of these stable Ga2O3 polytypes. Our findings reveal that these mechanically and dynamically stable Ga2O3 polytypes exhibit semiconductive properties, as evidenced by electronic band structure investigations. This research offers valuable insights into the optical characteristics of Ga2O3 polytypes with potential applications spanning various fields.

Inhibition photooxidation of pyrite under illumination via altering photogenerated carrier migration pathways: Role of DTC-TETA surface passivation

The oxidation of pyrite is the main cause of acidic mine drainage (AMD), which is a very serious environmental problem in numerous mining areas around the world. Previous studies have shown that passivation agents create a hydrophobic film on the surface of pyrite, effectively isolating oxygen and water. However, the presence of abundant sulfide minerals in tailings ponds may exacerbate AMD when exposed to solar radiation, due to the semiconductor properties of pyrite. It remains uncertain whether the current surface passivation coating can effectively prevent the oxidation of pyrite under light conditions. This paper is the first to investigate the passivation effect as well as the mechanism of surface passivation coating on pyrite under illumination from the perspective of materials science. The results demonstrated that the triethylenetetramine-bisdithiocarbamate (DTC-TETA) passivation coating on pyrite almost completely suppressed the photooxidation of pyrite under illumination by changing the migration path of photogenerated charge carriers. The formation of NC(S)2-Fe chelating groups provides atomic-level interface channels for DTC-TETA to transfer electrons to pyrite and creates a favorable reduction environment for pyrite. Besides, DTC-TETA coating greatly improves the electron-hole pairs recombination efficiency of pyrite, which significantly inhibits the photogenerated electron reduction of oxygen to generate reactive oxygen species (ROS). Moreover, DTC-TETA coating captures the photogenerated holes, avoiding direct oxidation of pyrite by holes. Density functional theory (DFT) calculations revealed that the DTC-TETA coating increases the adsorption energy barrier for oxygen and water. The results extend the existing knowledge on passivation mechanisms on pyrite and hold significant implications for the future screening, evaluation, and practical application of surface passivating agents.

Theoretical insights into the electronic and optical properties of lithium-based perovskite for solar cell applications

This study explores the influence of central metals and halide anions on the structural, electronic, and optical properties of LiBX3 perovskites (B = Ge, Sn, Pb, X = F, Cl, Br, I) in both unit cell and supercell configurations, aiming for potential applications in photovoltaic devices. Density functional theory calculations reveal that increasing the atomic radius of halogens and central metals directly affects the lattice parameters. Our research indicates that Ge and Sn-based perovskites (except for unit cell LiSnF3) exhibit semiconductor properties with direct band gap energies, while Pb-based perovskites in the unit cell configuration display an indirect band gap. Key factors contributing to the reduction of the band gap energy in most materials include the expansion of the atomic radius of halogens and the examination of perovskites in their supercell state, such that perovskites like LiGeI3, LiSnI3, and LiPbI3 represent a band gap value of 0.001 eV in their supercell configuration. Furthermore, the light absorption characteristics of these perovskites demonstrate a high absorption coefficient ranging from 105 to 106. Among the studied compounds, I-based perovskites exhibit the highest static dielectric constant, surpassing other perovskite variants, with for example, unit cell and supercell of LiSnI3 having static dielectric constant values of 38 and 70, respectively. Additionally, the investigation of perovskites in their supercell form suggests that the number of atoms in the network does not significantly impact their optical properties. In conclusion, based on various analyses, I-based perovskites are proposed as ideal candidates for application in Photovoltaic Solar Cells (PSCs).

Freestanding Serpentine Silicon Strips with Ultrahigh Stretchability over 300% for Wearable Electronics.

Well-functionalized electronic materials, such as silicon, in a stretchable format are desirable for high-performance wearable electronics. However, obtaining Si materials that meet the required stretchability of over 100% for wearable applications remains a significant challenge. Herein, a rational design strategy is proposed to achieve freestanding serpentine Si strips (FS-Si strips) with ultrahigh stretchability, fulfilling wearable requirements. The self-supporting feature makes the strips get rid of excessive constraints from substrates and enables them to deform with the minimum strain energy. Micrometer-scale thicknesses enhance robustness, and large diameter-to-width ratios effectively reduce strain concentration. Consequently, the FS-Si strips with the optimum design could withstand 300% stretch, bending, and torsion without fracturing, even under rough manual operation. They also exhibit excellent stability and durability over 50,000 cycles of 100% stretching cycles. For wearable applications, the FS-Si strips can maintain conformal contact with the skin and have a maximum stretchability of 120%. Moreover, they are electrically insensitive to large deformations, which ensure signal stability during their daily use. Combined with mature processing techniques and the excellent semiconductor properties of Si, FS-Si strips are promising core stretchable electronic materials for wearable electronics.

Enhancement of thermoelectric performance in monolayer AlP3 via Ga and In doping: A first-principles study

Recently, two-dimensional (2D) triphosphides have attracted much attention in the thermoelectric field due to their semiconductor properties and excellent electronic transport properties. In our study, the performances of AlP3, Al0.5Ga0.5P3, and Al0.5In0.5P3 doped monolayers in the thermoelectric transport are studied. First, the dynamic structural stabilities of the three monolayers are verified through phonon dispersion curves. Moreover, all monolayers are indirect band-gap semiconductors, which can be used as thermoelectric materials. The results show that larger electronic relaxation time and carrier mobilities of doped monolayers lead to larger electronic transport parameters and higher dimensionless thermoelectric figure-of-merit (ZT). It is found that after doping via Ga and In, the thermoelectric performances of AlP3 are increased by 1.31–1.79 times. Our findings show that AlP3 and its doped monolayers hold significant promise as thermoelectric materials within the temperature span of 300–700 K and the doping mechanism could significantly improve the thermoelectric properties of 2D structures.

Diffusion-Dominated Luminescence Dynamics of CsPbBr3 Studied Using Cathodoluminescence and Microphotoluminescence Spectroscopy.

Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the nanoscale. However, halide perovskites, which are promising optoelectronic materials, exhibit significantly different decay dynamics in their CL and photoluminescence (PL). We conducted time-correlation CL measurements of CsPbBr3 using Hanbury Brown-Twiss interferometry and compared them with time-resolved PL. The measured CL decay time was on the order of subnanoseconds and was faster than PL decay at an excited carrier density of 2.1 × 1018 cm-3. Our experiment and analytical model revealed the CL dynamics induced by individual electron incidences, which are characterized by highly localized carrier generation followed by a rapid decrease in carrier density due to diffusion. This carrier diffusion can play a dominant role in the CL decay time for undoped semiconductors, in general, when the diffusion dynamics are faster than the carrier recombination.

Advancements in self-assembling peptides: Bridging gaps in 3D cell culture and electronic device fabrication.

Self-assembling peptides (SAPs) show promise in creating synthetic microenvironments that regulate cellular function and tissue repair. Also, the precise π-π interactions and hydrogen bonding within self-assembled peptide structures enable the creation of quantum confined structures, leading to reduced band gaps and the emergence of semiconductor properties within the superstructures. This review emphasizes the need for standardized 3D cell culture methods and electronic devices based on SAPs for monitoring cell communication and controlling cell surface morphology. Additionally, the gap in understanding the relationship between SAP peptide sequences and nanostructures is highlighted, underscoring the importance of optimizing peptide deposition parameters, which affect charge transport and bioactivity due to varying morphologies. The potential of peptide nanofibers as extracellular matrix mimics and the introduction of the zone casting method for improved film deposition are discussed within this review, aiming to bridge knowledge gaps and offer insights into fields like tissue engineering and materials science, with the potential for groundbreaking applications at the interface of biology and materials engineering.

Enhanced performance in doped micro-nano porous organic thin-film transistors

Molecular doping, as an effective technique for controlling the electrical property of organic semiconductors (OSCs) by introducing additional charges, has been proven to adjust important device parameters in organic thin-film transistors (OTFTs). Doping highly crystalline OSCs without disrupting structural order is a crucial challenge, as it significantly affects the charge carrier mobility. Here, we demonstrate a molecular doping method without disrupting the molecular ordering to improve the charge carrier mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) based OTFTs via a simple thermal spin-coating method. The key is to introduce micro-nano pores into C8-BTBT thin-film for channel doping, which is achieved by mixing with the unsubstituted BTBT as it can be easily removed from the thin-film through an ordinary annealing process. Micro-nano pores allow the dopant molecules (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, F4-TCNQ) to access the conductive channel of OTFT, which is beneficial for charge injection. Indeed, we further discover that F4-TCNQ doped porous C8-BTBT thin-films exhibit better charge mobility than those of neat and F4-TCNQ doped C8-BTBT films in OTFTs. This work proposes an effective way to expose OSC conjugated core to the dopant, which not only improves the charge transfer reaction between organic/dopant semiconductor through cofacial stacking, but also reduces the trap density and contact resistance.

Carrier Transport Switching of Ferroelectric BTBT Derivative.

Alkylamide-substituted [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative of BTBT-NHCOC14H29 (1), which has ferroelectric N-H···O= hydrogen-bonding network of alkylamide group and two-dimensional (2D) electric structure of BTBT π-cores, was prepared to design the external electric field-responsive organic semiconductors. The short-chain derivative of BTBT-NHCOC3H7 (1') revealed the coexistence of a 2D electronic band structure based on the herringbone BTBT arrangement and the one-dimensional (1D) hydrogen-bonding chain. 1 formed a smectic E (SmE) liquid crystal phase above 412 K and showed ferroelectric hysteresis in the electric field-polarization (P-E) curves at 403-433 K. The remanent polarization (Pr) and coercive electric field (Ec) of 1 at 408 K, 0.1 Hz were 24.0 μC cm-2 and 5.54 V μm-1, respectively. By thermal annealing of thin-film 1 at 443 K, the molecular assembly structure of 1 changed from a monolayer to a bilayer structure with high crystallinity, resulting in conducting layers of BTBT parallel to the substrate surface. The organic field-effect transistor (OFET) device with thermally annealed thin-film 1 showed p-type semiconducting behavior with the hole mobility of 1.0 × 10-3 cm2 V-1 s-1. Furthermore, device 1 showed switching behavior of semiconducting properties by electric field poling and thermal annealing cycle. The electric field response of ferroelectrics modulated the molecular orientation and conduction properties of organic semiconductors, resulting in external electric field control of carrier transport properties.

Surface functional group regulation of Ti3C2Tx based on atmospheric pressure cold plasma

AbstractThe modulation of surface properties of Ti3C2Tx plays a crucial role in its diverse applications across various fields. However, a straightforward and reliable technique for controlling its surface functional groups remains elusive. In this study, we achieved controlled modification of Ti3C2Tx surface functional groups using atmospheric‐pressure cold plasma. We evaluated the plasma generation characteristics and found that the gas parameters could influence the discharge power and lead to different gas temperatures with the same voltage. Spectral analysis confirmed the presence of numerous reactive species in the plasma, facilitating the breaking and recombination of chemical bonds of functional groups on the Ti3C2Tx surface. The interaction between the plasma jet and Ti3C2Tx film revealed that the semiconductor properties of the Ti3C2Tx film limit the plasma diffusion area, while N2 doping and increased gas flow rates respectively reduce and enlarge the coverage area of cold plasma. A brief one‐minute cold plasma treatment induced a slight etching effect on the Ti3C2Tx film surface, effectively altering the ‐O and ‐F functional groups. However, it is noteworthy that excessive cold plasma treatment in the air may result in partial oxidation of Ti3C2Tx, necessitating the use of custom gas environments in further applications. This research provides valuable insights into surface modification techniques for Ti3C2Tx with potential implications in a wide range of applications.

Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

We have systematically investigated the electronic properties of Si doping germanene under external electric fields by the first-principle calculations. The results show that a wide range of linearly tunable and sizable direct band gaps for the Ge31Si1 and Ge28Si4 systems (3–1048 meV and 6–716 meV) are merely determined by the strength of the electric field. More importantly, the high carrier mobilities of the stable Ge31Si1 and Ge28Si4 systems are largely retained under external electric field. The mechanism of charge transfer confirms the p-type semiconductor properties in the Si doping germanene systems. These results indicate that the electronic properties of Si doping germanene can be effectively modulated under the external electric field, providing a potential application in novel electronic devices, such as Field effect transistors.

A Scanning Microwave Impedance Microscopy Study of α‐In2Se3 Ferroelectric Semiconductor

AbstractVan der Waals ferroelectric semiconductors, which encompass both ferroelectricity and semiconductivity, have garnered intensive research interests for developing novel non‐volatile functional devices. Previous studies focus on ferroelectricity characterization and device demonstration, with little attention paid to the fundamental electronic properties of these materials and their functional structures, which are essential for both device design and optimization. In this study, scanning microwave impedance microscopy (sMIM) is utilized to investigate the ferroelectric semiconductor of α‐phase indium selenide (α‐In2Se3) and its synaptic field effect transistors. α‐In2Se3 nanoflakes of varying thicknesses are visualized through capacitive signal detection, whose responses are consistent with finite element simulations manifesting dependence on both flake thickness and its semiconductor property. sMIM spectroscopy performed on α‐In2Se3‐based metal‐oxide‐semiconductor (MOS) structures reveals typical MOS capacitance‐voltage characteristics, with additional hysteresis arising from the ferroelectric switching of α‐In2Se3. The local conductance state changes of synaptic α‐In2Se3 ferroelectric semiconductor transistors (FeSFET) in response to gate voltage stimuli are effectively detected by in situ sMIM, in good agreement with electrical device transport properties. This work deepens the understanding of ferroelectric semiconductor physics toward their practical device application.

Electrochemical and semiconducting properties of multifunctional smart conductive fabrics based on polypyrrole

AbstractWe have fabricated multifunctional conductive fabrics composed of polypyrrole/BaTiO3/poly(acrylonitrile‐co‐methylacrylate) (PPy/BaTiO3/P(AN‐co‐MA)(PBA) utilizing a simple process including dip coating and in situ chemical polymerization of pyrrole, which oxidized both ammonium persulfate (APS) and ammonium persulfate + iron (III) chloride (APS + FeCl3) for flexible and wearable textile applications. The influence of the oxidant nature, PPy content, and BaTiO3 on the surface structures, electrochemical, and semiconducting characteristics of the fabrics was examined using scanning electrochemical microscopy (SEM), electrochemical impedance spectroscopy (EIS), and the Mott–Schottky (M–S) studies. The study revealed that the size of the polymer nanostructures on fabric has an impact on the electrochemical impedance properties. Specifically, a decrease in diameter (when FeCl3 + APS is used) or the formation of more compact swelling surface structures (when only APS is used) is associated with changes in the conductivity of the coated fabric. Based on the EIS tests, the composite coating (S0.1, S0.2, and S0.3) with FeCl3 has a higher electrical conductivity compared to the coating with APS (PBA). The M–S tests indicate that the semiconducting characteristics of coated fabrics are dependent upon the kind of oxidant, the amount of PPy, and the presence of BaTiO3.

Constructing Heptazine-COF@TiO2 Heterojunction Photocatalysts for Efficient Photodegradation of Acetaminophen under Visible Light.

Constructing heterojunction photocatalysts are widely applied to boost the photocatalytic activity of materials. Here, a novel covalent organic framework (COF) material with heptazine units was developed and hybridized with TiO2 nano particles (NPs) to fabricate the Heptazine-COF@TiO2 photocatalysts for acetaminophen (AAP) photodegradation. The successfully assembled heptazine unit endows the Heptazine-COF with outstanding semiconductor property (optical bandgap is 2.53 eV). The synthesized Heptazine-COF@TiO2 hybrids is proved to have the heterojunction structure with high visible light activity and fast charge-carrier mobility, and exhibits better performance in photodegradation of AAP under visible light. The excellent photodegradation efficiency (rate constant: 0.758 min-1) and high reusability (rate constant: 0.452 min-1 in the 6th cycles) of the optimized sample outperform the traditional inorganic photocatalysts and other heterojunction photocatalysts. In addition, these photocatalysts present universal degradation activity for other dyes and antibiotics.

Comprehensive investigation of ternary dysprosium complexes for white light emission: Synthesis, spectroscopic and colorimetric analyses

Dysprosium (Dy3+) containing four single-molecule complexes with 1,3-diketone ligand, TFPB (4,4,4-trifluoro-1-phenyl-1,3-butadionate) along with neutral co-ligands of varying denticity were synthesized and two of them were explored as potential sources of near-white light emission. The choice of ligand as well as the coordination surroundings of Dy(III) ion significantly influence the blue (B: 4F9/2 → 6H15/2) and yellow (Y: 4F9/2 → 6H13/2) emissions. The inclusion of the auxiliary ligand such as topo in D1 leads to reduction in emission intensity compared to D2-D4 due to less effective sensitization. At room temperature, the CIE color coordinates for complexes D1 and D4 approach the coordinates of perfectly balanced and idealized white light (0.333, 0.333). Furthermore, Correlated Color Temperature (CCT) values for D1 and D4 characterize them as cold-white-light emitters, while the complexes D2 and D3 are categorized as a neutral-light emitter. In addition to their visible emissions, the semi-conducting properties and suitable deactivation lifetime corresponding to these synthesized complexes (D1-D4) have also been extensively studied and found potential applications in basic research, security printing, sensors, detectors and OLEDs.