Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

Abstract

This research presents a comprehensive comparative analysis of the passivation kinetics of OFP-Cu and OF-Cu in simulated repository electrolyte. The study employs a range of techniques, including potentiodynamic polarization, multi-step potentiostatic polarization, electrochemical impedance spectroscopy, and Mott-Schottky analysis, to explore the intricacies of corrosion behavior. The Point Defect Model (PDM) is used to interpret the steady-state physicochemical processes. Utilizing the results of PDM optimization, defect distribution diagrams within the passivation film were constructed, shedding light on the pivotal transition from p-type to n-type semiconductor properties of the film. The study concludes with an interpretation of the experimental data, highlighting the enhancement of copper's corrosion resistance due to phosphorus doping, as elucidated by the Solute-Vacancy Interaction Model.