Schottky Metal Stripe Research Articles

Electron wave-vector filtering in a magnetoelectric nanostructure consisting of a δ-magnetic-barrier and a δ-electric-barrier

Based on a δ-magnetic-barrier and a δ-electric-barrier, we propose a magnetoelectric nanostructure, which can be constructed by patterning a half-infinitely wide ferromagnetic (FM) stripe and a narrow Schottky-metal (SM) stripe in a parallel configuration on the surface of GaAs/AlxGa1-xAs heterostructure. An obvious wave-vector filtering (WVF) effect occurs thanks to an essentially two-dimensional process for electron across the magnetoelectric nanostructure. WVF efficiency is associated with electronic energy, transverse wave vector and magnetic field; especially it can be modulated by rationally fabricating the SM stripe. These interesting features are helpful for developing electron-momentum filter (EMF) in nanoelectronics.

Spin separation in time dimension for electron in magnetically and electrically confined semiconductor nanostructure

We calculate dwell time of electron in magnetically and electrically confined semiconductor nanostructure (MECSN), which can be experimentally fabricated by patterning a ferromagnetic (FM) stripe and a Schottky metal (SM) stripe on top and bottom of InAs/AlxIn1-xAs, respectively. Spin-dependent dwell time is found thanks to the Zeeman interaction, which gives rise to the separation of electron spins in time dimension. Properly patterning the SM stripe can obviously improve electron-spin polarization owing to the SM-stripe dependence of effective potential experienced by electron in the MECSN, achieving a tunable temporal spin splitter for semiconductor spintronics device applications.

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

We theoretically explore the manipulation of a temporal electron-spin splitter by a δ-potential in an embedded magnetic-electric-barrier microstructure (EMEBM), which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Spin polarization of the dwell time remains, even though a δ-potential is inserted by atomic-layer doping. Both the magnitude and sign of the spin-polarized dwell time can be manipulated by changing the weight or position of the δ-potential. Thus, a structurally controllable temporal electron-spin splitter can be obtained for spintronics device applications.

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

We theoretically investigate spin polarization for electrons in magnetically and electrically confined semiconductor microstructure, which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on top and bottom of GaAs/AlxGa1-xAs heterostructure, respectively. Both Zeeman interaction and spin–orbit coupling are taken into account; however, electron-spin polarization comes mainly from the latter due to a small effective g-factor for GaAs. Besides, both magnitude and sign of spin polarization can be manipulated by changing interfacial confining electric field or strain engineering, resulting in a tunable electron-spin filter for spintronics device applications.

Control of Spin-Dependent Dwell Time by δ-Doping for Electron in Embedded Magnetic-Electric-Barrier Nanostructure

We report a theoretical investigation on effect of a δ-doping on spin-dependent dwell time for electron in embedded magnetic-electric-barrier nanostructure (EMEBN), which is fabricated by depositing a ferromagnetic stripe and a Schottky-metal stripe on top and bottom of InAs/AlxIn1−xAs heterostructure, respectively. Dwell time still remains spin related after a δ-doping is comprised in EMEBN by atomic-layer doping. Moreover, due to a δ-doping dependent effective potential experienced by electron in this EMEBN, both magnitude and sign of spin-polarized dwell time can be controlled by changing δ-doping. Therefore, this EMEBN can serve as a controllable temporal spin splitter for spintronics device applications.

Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/AlxIn1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Schottky-Metal Stripe

We theoretically explore dwell time for electrons in a semiconductor microstructure, which is constructed on the surface of the InAs/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-<i>x</i></sub> As heterostructure by patterning a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in a parallel configuration. Dwell time is found to be dependent on electron spins. Spin-polarized dwell time can be controlled by changing an applied voltage to SM stripe. Thus, electron spins can be separated in time dimension, and such a semiconductor microstructure can be used as an electrically tunable temporal spin splitter for spintronics device applications.

Bias-controllable electron-momentum filter based on a magnetically and electrically confined semiconductor heterostructure

We apply a bias to an electron-momentum filter constructed by patterning a ferromagnetic (FM) stripe and a Schottky metal (SM) stripe in a parallel configuration on surface of a GaAs/AlxGa1-xAs heterostructure, and theoretically explore its influence on wave vector filtering (WVF) effect in the device. It is shown that WVF efficiency depends strongly on this applied bias due to bias dependence of effective potential felt by electrons in the device. It is also shown that WVF effect can be modified expediently by adjusting magnitude or sign of applied bias, which may be helpful for developing an electrically-controllable electron-momentum filter.

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

We theoretically study spin-polarized transport induced by spin-orbit coupling (SOC) as well as the Zeeman interaction for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure, which is constructed on surface of GaAs/AlxGa1-xAs heterostructure by patterning a ferromagnetic stripe and a Schottky-metal stripe in parallel configuration. Electron-spin polarization is found to originate mainly from spin-orbit coupling. Spin polarization can be manipulated by adjusting Rashba or Dresselhause-SOC strength, which may result into a tunable spin filter for spintronics devices.

Spin-orbit coupling induced spin polarisation in both magnetically and electrically modulated semiconductor heterostructure

ABSTRACTSpin polarisation is investigated for electrons in a spin–orbit coupled, magnetically and electrically modulated semiconductor heterostructure, which can be fabricated by patterning a ferromagnetic stripe and a Schottky-metal stripe in the parallel configuration on the surface of GaAs/AlxGa1-xAs heterostructure. It is shown that spin polarisation comes mainly from spin–orbit coupling. It is also shown that spin polarisation can be modified by Rashba or Dresselhaus spin-orbit coupling, leading to a controllable spin filter and benefiting future spintronics devices.

Wave vector filtering effect for electrons in magnetically and electrically confined semiconductor heterostructure

Wave vector filtering effect is explored for electrons in magnetically and electrically confined semiconductor heterostructure, which can be realized experimentally by depositing a ferromagnetic stripe and a Schottky metal stripe in parallel configuration on the surface of [Formula: see text] heterostructure. Adopting improved transfer matrix method to solve Schrödinger equation, electronic transmission coefficient is calculated exactly, and then wave vector filtering efficiency is obtained by differentiating transmission probability over longitudinal wave vector. An obvious wave vector filtering effect appears, due to an essentially two-dimensional process for electron transmission through a magnetic nanostructure. Besides, wave vector filtering efficiency is associated closely with width, position and externally applied voltage of Schottky metal stripe, which makes wave vector filtering effect become controllable and results in a manipulable momentum filter for nanoelectronics.

Tunable Wave-Vector Filtering Effect for Electrons in a Magnetically and Electrically Confined Semiconductor Heterostructure with a δ-Doping

We theoretically investigate how to manipulate the wave-vector filtering effect by δ-doping for electrons in a magnetically and electrically confined semiconductor heterostructure, which can be constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe in a parallel configuration on the surface of the GaAs/AlxGa1−xAs heterostructure. The δ-doping dependent transmission is calculated by exactly solving the Schrodinger equation with the help of an improved transfer matrix method. An appreciable wave-vector filtering effect is revealed. Its wave-vector filtering efficiency is found to be tunable by changing the weight or position of the δ-doping. Thus, a structurally controllable momentum filter can be obtained for nanoelectronics device applications.

Dependence of valley polarization on Schottky metal stripe in magnetic-strain graphene

We investigate the valley-dependent transport properties of electrons in a magnetic-strain graphene under the modulation of the Schottky metal (SM) stripe. The valley polarization can be achieved in such a graphene due to the effect of the strained barrier rather than the SM stripe. However, the SM stripe can play an important effect on the degree of the valley polarization, which can be easily controlled through changing the position and/or width of the SM stripe. Furthermore, the applied voltage on the SM stripe also can easily modulate the valley polarization. This study is very useful for understanding and designing the valleytronic devices.

Effects of ferromagnetic and Schottky metal stripes on electronic transport in a GMR device

Based on transfer matrix method, the giant magnetoresistance (GMR) effect of 2-dimensional electron gas (2DEG) under magnetic and electrical potential is investigated. Such system can be obtained easily by depositing two ferromagnetic (FM) stripes and one schottky metal (SM) on the surface of semiconductor heterostructure. Our study shows a great difference in electrons tunneling through parallel (P) and antiparallel (AP) magnetization of FM stripes. The corresponding magnetoresistance ratio (MRR) depends strongly on the magnetic intensity of magnetic barrier (MB) and the height (U(x)) of electric barrier (EB). Furthermore, we also study the effect of SM stripe width (ds) on MRR for a given value of U(x). It indicates that the MRR of the device is sensitive to the ds. These results may offer an alternative to get a tunable GMR device by adjusting U(x) and width of the SM stripe.

Spin-polarized transport of the electron in a device with a Schottky metal stripe and a δ-doping

We theoretically investigate the electron transport properties in a nanostructure modulated by a ferromagnetic stripe (FM) and a Schottky metal stripe (SM) as well as a [Formula: see text]-doping with the help of transfer-matrix method. It is found that the position and the weight of the [Formula: see text]-doping, the width of the SM and the electrical potential, all play an important role in the electron transmission probability and the spin polarization. Therefore, we can control the electron transport properties through adjusting the SM and the [Formula: see text]-doping. These interesting phenomena may be very helpful for designing the spintronic devices.

Electric control of wave vector filtering in a hybrid magnetic-electric-barrier nanostructure

We theoretically investigate how to manipulate the wave vector filtering effect by a traverse electric field for electrons across a hybrid magnetic-electric-barrier nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe and a Schottky-metal stripe on top and bottom of a GaAs/Al x Ga1−xAs heterostructure, respectively. The wave vector filtering effect is found to be related closely to the applied electric field. Moreover, the wave vector filtering efficiency can be manipulated by changing direction or adjusting strength of the traverse electric field. Therefore, such a nanostructure can be employed as an electrically controllable electron-momentum filter for nanoelectronics applications.

Lateral Shifts for Spin Electrons in a Hybrid Magnetic-Electric-Barrier Nanostructure Modulated by Spin-Orbit Couplings

We theoretically investigate how to modulate spin-dependent lateral shifts by the spin-orbit coupling (SOC) in a hybrid magnetic-electric-barrier (MEB) nanostructure, which can be experimentally realized by depositing a ferromagnetic (FM) stripe and a Schottky metal (SM) stripe on the top and bottom of the semiconductor heterostructure, respectively. Two kinds of ROCs, Rashba SOC (RSOC) and Dresselhaus SOC (DSOC), are taken into account fully. The Schrodinger equation of the spin electron in the hybrid MEB nanostructure is exactly solved by using the improved transfer-matrix method (ITMM), and the lateral shift and its spin polarization are numerically calculated with the help of the stationary phase method (SPM). Theoretical analysis indicates that the spin polarization effect in the lateral shift still exists in the hybrid MEB nanostructure when the SOCs are considered. Numerical simulations show that both magnitude and sign of the spin polarization effect in lateral shifts vary strongly with the strengths of RSOC and DSOC. These interesting features may offer an effective means to control the behavior of spin-polarized electrons in the semiconductor nanostructure, and such a hybrid MEB nanostructure serves as a SOC-manipulable spatial spin splitter for spintronic applications.

Manipulable wave-vector filtering in a hybrid magnetic-electric-barrier nanostructure

We theoretically explore the control of the wave-vector filtering (WVF) effect in a hybrid magnetic-electric-barrier nanostructure, which can be experimentally realized by depositing a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe on top and bottom of a GaAs/Al\(_{\text {x}}\)Ga\(_{1-x}\)As heterostructure, respectively. It is shown that an obvious WVF effect appears in such a device. It is also shown that the degree of the WVF effect is related to the width and position of the SM stripe. In particular, the WVF effect can be tuned by the applied voltage to the SM stripe, and thus a manipulable momentum filter can be obtained for nanoelectronics applications.

Transport properties in a monolayer graphene modulated by the realistic magnetic field and the Schottky metal stripe

Based on the transfer-matrix method, a systematic investigation of electron transport properties is done in a monolayer graphene modulated by the realistic magnetic field and the Schottky metal stripe. The strong dependence of the electron transmission and the conductance on the incident angle of carriers is clearly seen. The height, position as well as width of the barrier also play an important role on the electron transport properties. These interesting results are very useful for understanding the tunneling mechanism in the monolayer graphene and helpful for designing the graphene-based electrical device modulated by the realistic magnetic field and the electrical barrier.

Spin filtering in a hybrid ferromagnet, Schottky metal and semiconductor nanostructure

Abstract We report a theoretical study of spin-dependent transport in a magnetic nanostructure, which can be experimentally realized by depositing a ferromagnetic metal (FM) stripe and a Schottky metal (SM) stripe on the top and at the bottom of the semiconductor heterostructure. Theoretical analysis reveals that the intrinsic symmetry in a single FM-stripe magnetic system can be broken by the SM stripe placed at the bottom of the heterostructure, and thus a sizeable spin polarization effect appears. Numerical calculation shows that not only amplitude of the spin polarization but also its sign varies with the width and/or the position of the SM stripe.

Transport properties in a graphene-based magnetic nanostructure modulated by a Schottky metal stripe

Using the transfer matrix method, we theoretically study the electron transport properties in a graphene-based magnetic nanostructure modulated by a Schottky metal (SM) stripe, which can be experimentally realized by depositing a ferromagnetic metal (FM) stripe and a SM stripe on the top and bottom of the monolayer graphene. From the numerical results, we find that the electron transmission and the conductance strongly depend not only on the incident angle of carriers and the strength of the magnetic field, but also on the applied voltage on the SM stripe and the width of the SM stripe as well as the position of the SM stripe. These results may be very helpful for understanding the electron tunneling in graphene and for designing the graphene-based nanodevices.