Bias-controllable electron-momentum filter based on a magnetically and electrically confined semiconductor heterostructure

Abstract

We apply a bias to an electron-momentum filter constructed by patterning a ferromagnetic (FM) stripe and a Schottky metal (SM) stripe in a parallel configuration on surface of a GaAs/AlxGa1-xAs heterostructure, and theoretically explore its influence on wave vector filtering (WVF) effect in the device. It is shown that WVF efficiency depends strongly on this applied bias due to bias dependence of effective potential felt by electrons in the device. It is also shown that WVF effect can be modified expediently by adjusting magnitude or sign of applied bias, which may be helpful for developing an electrically-controllable electron-momentum filter.