Abstract
Based on transfer matrix method, the giant magnetoresistance (GMR) effect of 2-dimensional electron gas (2DEG) under magnetic and electrical potential is investigated. Such system can be obtained easily by depositing two ferromagnetic (FM) stripes and one schottky metal (SM) on the surface of semiconductor heterostructure. Our study shows a great difference in electrons tunneling through parallel (P) and antiparallel (AP) magnetization of FM stripes. The corresponding magnetoresistance ratio (MRR) depends strongly on the magnetic intensity of magnetic barrier (MB) and the height (U(x)) of electric barrier (EB). Furthermore, we also study the effect of SM stripe width (ds) on MRR for a given value of U(x). It indicates that the MRR of the device is sensitive to the ds. These results may offer an alternative to get a tunable GMR device by adjusting U(x) and width of the SM stripe.
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