Abstract
We calculate dwell time of electron in magnetically and electrically confined semiconductor nanostructure (MECSN), which can be experimentally fabricated by patterning a ferromagnetic (FM) stripe and a Schottky metal (SM) stripe on top and bottom of InAs/AlxIn1-xAs, respectively. Spin-dependent dwell time is found thanks to the Zeeman interaction, which gives rise to the separation of electron spins in time dimension. Properly patterning the SM stripe can obviously improve electron-spin polarization owing to the SM-stripe dependence of effective potential experienced by electron in the MECSN, achieving a tunable temporal spin splitter for semiconductor spintronics device applications.
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