Abstract
We investigate the valley-dependent transport properties of electrons in a magnetic-strain graphene under the modulation of the Schottky metal (SM) stripe. The valley polarization can be achieved in such a graphene due to the effect of the strained barrier rather than the SM stripe. However, the SM stripe can play an important effect on the degree of the valley polarization, which can be easily controlled through changing the position and/or width of the SM stripe. Furthermore, the applied voltage on the SM stripe also can easily modulate the valley polarization. This study is very useful for understanding and designing the valleytronic devices.
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