Post Deposition Research Articles

Exploring the impact of different annealing conditions on physical properties of CdSeTe thin films for solar cell absorber layer applications

The perovskite and Silicon based single junction solar cells certainly showed higher efficiency but the perovskite solar cells are highly degradable and unstable in environment whereas conventional Silicon solar cells are relatively costly. The CdTe absorber based thin film solar cells have attained efficiency of greater than 22% where doping of Selenium into the CdTe absorber layer seems to improve the photovoltaic performance. The CdCl2 treatment is proven to be critical process which induces the grain growth and recrystallization in CdSeTe films. Thus herein, air and CdCl2 annealing is performed over thermally evaporated CdSeTe thin films to seek out their applicability as an effective absorber for Cd-based thin film photovoltaics. The XRD diffractograms exposed the appearance of cubic phase with (111) preferred orientation where crystallite size is increased with annealing temperature. The optical absorbance is found to be altered with temperature of annealing and Tauc’s plots exhibited that bandgap is found to be changed in the range of 1.40–1.52 eV with increasing annealing temperature. Electrical analysis divulges Ohmic character of films where electrical resistivity and conductivity are affected by nature and temperature of post-deposition annealing. The EDS patterns confirmed the deposition of CdSeTe thin films and post deposition CdCl2 activation treatment. The FESEM images demonstrated alteration in surface morphology by grain growth where the grain size of CdSeTe films is increased from 70 nm to 235 nm with CdCl2 annealing temperature. The findings confirm that annealed CdSeTe thin films showed demanding behavior for solar cell devices as prominent light harvesting absorber layers.

Spectral Response of Solar Blind M-S-M Photodetector With InGaZnO Film Sputter Deposited in Diluted Oxygen Ambience

Indium-gallium-zinc-oxide (InGaZnO) metal-semiconductor-metal (M-S-M) photodetector has been demonstrated here, which shows enhanced spectral response in the solar blind window. It had been found that, while IGZO film (100 nm) for the MSM photodetector was sputtered in argon diluted oxygen ambience (Ar:O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> = 20:2 sccm) deposited film contained higher atomic percentage of gallium as compared to film sputtered in pure argon ambience. Higher Ga content (26.92 – 28.14 %) present in diluted O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ambience sputtered film was found advantageous for stretching spectral response (SR) of detector till the solar blind window. Fabricated detector showed peak responsivity of 1.12 A/W at 255 nm and at 8V when as-deposited diluted O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> sputtered film in it received two consecutive anneals beginning with ozone (O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) at 90°C for 30 minutes followed by a 300°C thermal anneal for 1 hour in nitrogen (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). Substantial improvement in responsivity as found in solar blind window has been attributed to enhanced absorption by IGZO in deep UV band separately characterized using absorption spectra of diluted O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> sputtered and post deposition annealed IGZO films. Enhanced UV-absorption was resulted from structural relaxation of lattice prompted by higher Ga content present in as-deposited films, which reduces ionization energy of deep lying neutral oxygen vacancy states within the IGZO bandgap thereby increases free carrier density impacting extinction coefficient.

Plasma-enhanced atomic layer deposition of nickel and nickel oxide on silicon for photoelectrochemical applications

The production of hydrogen fuel through sunlight-driven water splitting has the potential to harness and store large quantities of solar energy in a clean and scalable chemical state, suitable for later use in a range of energy applications. Silicon (Si) possesses many of the required properties to be used effectively as a photoelectrochemical (PEC) water-splitting photoanode. However, its sensitivity to corrosion during the oxygen evolution reaction limits its performance in photoanode applications, thus requiring additional overlayer materials to protect the underlying Si substrate. Nickel oxide (NiO) is one material that acts as an effective protective layer, being transparent, suitably conductive and stable. In this work, we present NiO deposition via state-of-the-art atomic layer deposition and photoemission studies to grow and characterize NiO and Ni–metal protective films. Early-stage nucleation of deposited thin films is illustrated along with the effects of post-deposition annealing and argon milling on depth profile information. Previous reports on the effects of slow argon milling are explored and counter arguments are proposed. Protective films are subjected to PEC testing, which shows enhancement of stability and photocurrent output as a result of the deposited films and plasma annealing on these thin films.

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been identified by a combination of isothermal capacitance transient spectroscopy (ITS) and X-ray photoelectron spectroscopy (XPS). A post deposition annealing (PDA) at 500 °C in O2 ambient is confirmed to be an effective way to reduce the bulk traps in an atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. The interface and bulk trapping behavior that account for ΔVTH, have been distinguished by ITS. It is revealed that continual charging of bulk traps in the Al2O3 gate dielectric occurred once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such bulk traps probably stem from the Al-O-H component in the as-deposited Al2O3 layers, as detected by XPS. Energy band simulation further illustrates the capture process of the bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH in GaN-based MOS-HEMTs.

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively low crystallization temperature. However, it remains challenging to achieve excellent ferroelectric properties with post deposition annealing (PDA) process at a BEOL compatible temperature. Along these lines, in this work, it is demonstrated that the ferroelectricity of 15 nm thick HZO thin film prepared by PDA process at 400 °C can be improved to varying degrees, via depositing 2 nm thick dielectric layers of Al2O3, HfO2, or ZrO2 at either the bottom or the top of the film. Notably, the HZO thin film with the top-Al2O3 layer exhibits remarkable ferroelectric properties, which are independent of the thickness of HZO. The 6 nm thick HZO thin film shows a total remanent polarization (2Pr) of 31 μC/cm2 under an operating voltage of 2.5 V. These results represent a significant advancement in the fabrication of high-performance, BEOL compatible ferroelectric memories, as compared to previously reported state-of-the-art works.

Palynofacies analysis of the JOG16N-8 borehole, K5 formation from the Maniamba Basin (middle Permian), Mozambique: A contribution for hydrocarbon exploration

The Maniamba Basin in Mozambique is surveyed mainly in regard to coal exploration. However, this basin is also known for containing well preserved fossil plants and vertebrate fossils that shed light to the understanding of Gondwana ecosystems. Nevertheless, organic matter analysis (palynofacies) and its implication for depositional environment and hydrocarbon source rock have not yet been performed. Here, we report for the first time in the Maniamba Basin, results from palynofacies analysis combined with thermal maturation and kerogen typification. Palynofacies analysis was applied on 69 samples from the sediments of the JOGN16N-8 borehole, K5 Formation (middle Permian).The results indicate that sediments are dominated by phytoclasts with less abundant sporomorphs and sparse amorphous organic matter (AOM). Three palynofacies were identified suggesting depositional settings in a general proximal and oxic lacustrine-fluvial deltaic environment. The dominance of opaque phytoclasts may be due to wildfires, oxidation conditions before or post deposition in proximity to terrestrial settings and an environment under obliquity cycle controlled monsoon climate. The organic matter composition combined with Spore Colour Index (SCI), pointed out the existence of an abundant type IV kerogen followed by type III in immature phase suggesting very little or no potential for gas exploration. Very few horizons suggest the existence of kerogen type II. This study, gives significant information for better understanding of the variation of organic matter, palaeoenvironment and source rock potential of the studied area.

Investigating the Superconducting Properties and Surface Morphology of Sputtered Nb Films on Cu Due to Laser Treatment

Bulk niobium is currently the material of choice for superconducting radio frequency (SRF) cavities and is a well matured process. However, it is possible that SRF cavities could be further improved beyond bulk Nb by sputtering thin Nb films onto Cu cavities. Copper has a greater thermal conductivity than Nb and is also easier to machine, whilst sputtering films on the surface reduces the amount of Nb used to fabricate the whole cavity. However, sputtering Nb on Cu produces other issues, for example, the surface quality of the Cu affects the quality of the Nb deposited on the surface and therefore the superconducting parameters. As the Nb on the surface is not perfect, the magnetic field produced by the RF can enter the cavity earlier than expected, producing RF losses, which can in turn lead to a quench. One approach is to treat the Nb post deposition by irradiating the surface using a laser to polish the surface of the Nb and increase the surface magnetic field that the cavity can maintain whilst remaining in the Meissner state. A magnetic field penetration experiment designed and built at Daresbury Laboratory has been used to measure the field of full flux penetration to characterise the effect of the laser treatment on the superconducting properties of the Nb. Surface characterisation and the response of the Nb in a DC magnetic field have also been performed to try and provide an explanation for the change in the superconducting properties. The results demonstrate that the laser treatment can lead to an increase in the magnetic field at which the flux penetrates from one side of the sample to the other, thus it could potentially improve the performance of Nb coated RF cavities.

Growth of few layers of WS2 thin films by pulsed laser deposition

Tungsten disulphide (WS2) is a notable material among 2D transition metal dichalcogenides (TMDCs) for the next generation of optoelectronic devices. Therefore, the fabrication of good quality thin films with controlled growth parameters is essential for device level applications. Pulsed laser deposition (PLD) can be replacement for the conventionally used CVD technique. We report the growth of few layers of 2D WS2 thin films on Si/SiO2 substrates by PLD. A sintered WS2 target was ablated at room temperature using the fourth harmonics of Q-switched Nd:YAG laser (λ = 266 nm, pulse width = 10 ns) followed by a post deposition annealing at different temperatures. Deposited films were characterized by RAMAN, Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Controlled growth of few layers of WS2 thin films can make a remarkable change in the development of novel optoelectronic devices.

Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO&lt;sub&gt;2&lt;/sub&gt;/SiC Lateral MOSFETs

In this paper, the effect of different post oxide deposition nitridation processes in NO on n-channel lateral MOSFETs fabricated on implanted 4H-SiC were investigated. In particular, the electrical behavior of the MOSFETs was deeply investigated not only in terms of SiO2/SiC interface state density and field effect mobility, but also considering the threshold voltage stability effect. The aim of this work was to explore to which extent post oxide deposition annealing in NO is beneficial for the MOS interface behavior and when their detrimental effects start to become predominant on the device performances. Here, the separation of the trapping states at the interface – either close to the conduction and valence band edges – and the near interface oxide traps are reported for the different duration of the post oxide deposition annealing. In fact, cyclic gate bias stress was employed in order to analyze the behavior of the trapping states and to correlate them with the variation of the benefits in terms of the channel mobility (that saturates at about 80 cm2V-1s-1), and on the threshold voltage instability effect. In particular, prolonged PDAs may induce an increase of the amount of trapping states close to the valence band edge and inside the insulator of about 20% and 50 %, respectively.

Effects of electrode materials on the performance of Zr0.75Hf0.25O2-based ferroelectric thin films via post deposition annealing

In this work, the effects of top electrode (TE) and bottom electrode (BE) on the ferroelectric properties of zirconia-based Zr0.75Hf0.25O2 (ZHO) thin films annealed by post-deposition annealing (PDA) are investigated in detail. Among W/ZHO/BE capacitors (BE = W, Cr or TiN), W/ZHO/W delivered the highest ferroelectric remanent polarization and the best endurance performance, revealing that the BE with a smaller coefficient of thermal expansion (CTE) plays a vital role in enhancing the ferroelectricity of fluorite-structure ZHO. For TE/ZHO/W structures (TE = W, Pt, Ni, TaN or TiN), the stability of TE metals seems to have a larger impact on the performance over their CTE values. This work provides a guideline to modulate and optimize the ferroelectric performance of PDA-treated ZHO-based thin films.

Effect of annealing temperature and thickness on the structural and optical properties of strontium bismuth niobate films

Strontium Bismuth Niobate (SBN) thin films were prepared by metal organic decomposition method. The effects of post deposition annealing temperature (500–900 °C) and thickness (200–650 nm) on the structural and optical properties have been discussed. X-ray diffraction studies indicate the formation of single phase structure at annealing temperature of 800°C. The crystallinity of the samples improved with the increase in film thickness (200–500 nm), however, structural changes were observed beyond film thickness 500 nm. The changes in surface morphology of the films have been discussed as a function of annealing temperature and thickness. Although well-defined Raman spectra were obtained at higher annealing temperature (≥700 °C) for low thickness film, low frequency Raman modes were observed for higher thickness film (≥500 nm). The optical transmittance of the film decreases with increase in thickness from 200 to 650 nm. The energy band gap and refractive index have been estimated as a function of annealing temperature and film thickness. The band gap values decreased from 4.38 to 3.88 eV with the increase in film thickness. The correlation between structural and optical properties has been done in order to optimize annealing temperature and film thickness at 800 °C/ 500 nm.

Nanoscale Surface Analysis Reveals Origins of Enhanced Interface Passivation in RbF Post Deposition Treated CIGSe Solar Cells

AbstractAlkali post deposition treatments (PDTs) of Cu(In,Ga)Se2 absorbers have boosted the power conversion efficiency (PCE) of the solar cell devices in the last years. A detailed model explaining how the PDTs impact the optoelectronic properties at the nanoscale is still lacking. Here, via various scanning probe techniques, X‐Ray photo‐electron spectroscopy and high resolution secondary ion mass spectroscopy it is shown that the RbF PDT treatments lead to a one to one exchange of Rb with Cu at the surface. This exchange takes place in the naturally occurring Cu‐depleted CIGSe surface, known as the ordered vacancy compound. A detailed comparison between samples with different PDTs after various cleaning procedures furthermore highlights the necessity to perform all the measurements on NH4OH cleaning surfaces only. After NH4OH, no RbInSe2 phase could be detected at the surface anymore and the surface bandgap, as measured with scanning tunneling spectroscopy is only 1.7 eV. The findings demonstrate that the existence of a RbInSe2 phase is most likely not responsible for the recent improvements in power conversion efficiency for state of the art solar cells. The primary effect of the PDT treatment is a modification of the ordered vacancy compound, where Cu is exchanged with Rb.

Influence of growth time on the properties of CdTe thin films grown by electrodeposition using acetate precursor for solar energy application

Cadmium telluride (CdTe) thin films were deposited using a two–electrode electrodeposition (ED) configuration from an aqueous acidic solution. The electrolyte solution contains 1 M of cadmium acetate dihydrate (Cd (CH3OO) 2.2H2O) as cadmium precursor and 1 ml of tellurium dioxide (TeO2) as tellurium precursor. The thin films were grown for different deposition times of 60, 120, 180, 240, and 300 min to investigate the effect of the deposition period on the structural, optical, electrical, surface morphology, elemental composition, and surface roughness properties of the CdTe thin films in both as–deposited and heat–treated forms. X-ray diffraction (XRD) analysis indicates that the CdTe thin films have polycrystalline cubic zinc blend, orthorhombic and hexagonal structures. The result confirmed that the cubic phase is dominant and the peak for preferred orientation is along the (111) plane. Ultraviolet-visible (UV–vis) spectrophotometry study shows that the band gap of the as-deposited thin films varies from (1.41–1.45) eV, and after heat treatment, the band gap decreased to (1.39–1.42) eV. Photoelectrochemical cell (PEC) measurements show that CdTe thin films haven-type conductivity in both as–deposited and annealed forms. Scanning electron microscopy (SEM) analysis shows that the surface morphology of CdTe thin films changed as the deposition period increases. After heat treatment, increase in grain size was observed. Energy–dispersive x-ray spectroscopy (EDS) analysis shows that the percentage composition of as–deposited and heat-treated CdTe thin films varied with deposition time. After post–deposition treatment (PDT), the concentration of Te decreased, while that of Cd increased due to recrystallization during annealing. For the film deposited for 120 min, stoichiometric composition of CdTe was observed after heat treatment. Scanning probe microscopy (SPM) measurements revealed that the average surface roughness of the thin films varied with deposition time. The maximum average surface roughness was recorded when the film was deposited for 120 min. These results show that the prepared CdTe thin films have potential application as absorber layers in thin film solar cells.

The impact of multi-layered dielectrics on the electrical performance of ZnO thin-film transistors

The electrical performance of ZnO thin film transistors (TFTs) fabricated on three different dielectric layers is investigated using an inverted staggered bottom gate thin film transistor structure. This work demonstrated the potential of integrating high-k dielectrics in ZnO TFTs in a dielectric multi-layered stack using SiO2 as the support layer for all the hero-dielectrics layers. In order to achieve this, ZnO thin film semiconducting layers were deposited at room temperature by radio frequency (RF) sputtering method and with no post deposition heat treatment, making them suitable candidates for low cost large area electronics on low temperature substrates (such as plastics). The dielectric films investigated were aluminium nitride (AlN), silicon nitride (SiN) and silicon dioxide (SiO2). The effective mobility of SiN devices was about half that observed in AlN devices. However, the dielectric layers exhibited hysteresis of approximately 0 V, 2 V and 7 V for the SiO2, AlN and SiN respectively. In addition, SiO2 TFTs have lowest threshold voltage (VT) and turn-on voltage (Von). The capacitance-voltage measurement for these device show that the flatband and threshold voltage of SiN and AlN MOS capacitors shifted towards more negative voltages instead when compared with the single layer SiO2 devices.

Composition and electronic structure of {rm SiO}_{rm x}/{rm TiO}_{rm y}/Al passivating carrier selective contacts on n-type silicon solar cells

Carrier-selective and passivating SiO_{rm x}/TiO_{rm y} heterocontacts are an attractive alternative to conventional contacts due to their high efficiency potentials combined with relatively simple processing schemes. It is widely accepted that post deposition annealing is necessary to obtain high photovoltaic efficiencies, especially for full area aluminum metallized contacts. Despite some previous high-level electron microscopy studies, the picture of atomic-scale processes underlying this improvement seems to be incomplete. In this work, we apply nanoscale electron microscopy techniques to macroscopically well-characterized solar cells with SiO_{rm x}/TiO_{rm y}/Al rear contacts on n-type silicon. Macroscopically, annealed solar cells show a tremendous decrease of series resistance and improved interface passivation. Analyzing the microscopic composition and electronic structure of the contacts, we find that partial intermixing of the SiO_{rm x} and TiO_{rm y} layers occurs due to annealing, leading to an apparent thickness reduction of the passivating SiO_{rm x}. However, the electronic structure of the layers remains clearly distinct. Hence, we conclude that the key to obtain highly efficient SiO_{rm x}/TiO_{rm y}/Al contacts is to tailor the processing such that the excellent chemical interface passivation of a SiO_{rm x} layer is achieved for a layer thin enough to allow efficient tunneling through the layer. Furthermore, we discuss the impact of aluminum metallization on the above mentioned processes.

Optical and physical properties of annealed amorphous niobium oxide thin films.

The physical and optical properties of coatings deposited using physical vapor deposition techniques exhibit changes during post deposition annealing. Optical properties including the index of refraction and spectral transmission vary when coatings are annealed. Physical and mechanical properties such as thickness, density, and stress are also impacted by annealing. In this paper, we study the source of these changes by examining the impact of 150-500°C annealing on N b 2 O 5 films deposited using thermal evaporation and reactive magnetron sputtering. Models based on the Lorentz-Lorenz equation and potential energy considerations explain the data, and rationalize conflicts between previously reported results.

Stability of Cu2ZnSnSe4/CdS heterojunction based solar cells under soft post-deposition thermal treatments

The thermal stability of the Cu 2 ZnSnSe 4 (CZTSe) absorber and CdS buffer layers in SLG/Mo/CZTSe/CdS/i-ZnO/ITO devices is explored by performing a series of soft (∼200 °C) post deposition treatments (PDTs). A comprehensive analysis of a sample comprised by 56 individual devices by means of Raman and photoluminescence spectroscopies coupled with optoelectronic characterization is performed at different PDT steps. This allows isolating the effects of the PDT on the CZTSe absorber and CdS buffer layer separately and reveals clear evidences of: i) a degradation of the absorber due to Cu/Zn disorder that hinders device performance, and ii) an improvement of the buffer layer by the recrystallization of the CdS nanolayer that is the main responsible for the PDT-induced efficiency improvement. As such, it is concluded that CZTSe/CdS based PV devices present a low thermal stability under relatively low temperatures (in the 100–200 °C range), comparable to the temperatures employed at the final production stages of thin film PV devices or even during device operation, that leads to significant changes in solar cell performance and needs to be taken into consideration for the further development of the kesterite PV technology. These results are supported by a novel methodology for easily discerning between changes in Cu/Zn disorder and in point defects concentration in kesterites based on solely on Raman spectroscopy that is proposed in this work and developed through the analysis of a set of CZTSe powder samples with strong variation of the order parameter Q. • The CZTSe/CdS heterojunction is unstable under soft post deposition treatment (PDT). • Soft PDT induced performance improvement arises from a recrystallization of the CdS. • Soft PDT induces detrimental Cu/Zn disorder at the CZTSSe absorber layer. • Raman spectroscopy can discern between changes in disorder and defect concentration.

Improving open-circuit voltage deficit by interface passivation via Li treatment in Cu2ZnSn(S,Se)4 solar cells

Li-doping via LiF post deposition treatment has achieved an enhanced open-circuit voltage in Cu2ZnSn(S,Se)4 solar cells. The Li treatment passivates the defects resulting in the modification of interface band alignment and enhanced charge excitation.

Charge trapping effects in nonvolatile memory cells with HfO2/Al2O3 nanolaminated trapping layer

The charge trapping effects in memory cells with HfO2/Al2O3 nanolaminated stacks with two different thicknesses (2.4 and 3.5 nm) of the tunnel SiO2 layer were investigated. The HfO2/Al2O3 stacks were fabricated by atomic layer deposition and received post deposition annealing in O2. The structures with 3.5 nm tunnel oxide were found to provide higher density of trapped charges. The obtained trapped negative charge density is -3.56×10−6 C/cm2 and the positive one is 4.03×10−6 C/cm2. It is demonstrated that the electron trapping is significantly influenced by the amount of available electrons in the inversion layer. Under illumination, pulses with duration of 1 ms could provide trapped negative charge density equal to ~60% the value obtained at 10 s duration, where a saturation of the trapped charge is found. The hole trapping is not influenced by the illumination of capacitors and it is found to be slower than the electron one. Some aspects of the trapping process as well as some of the peculiarities in the capacitance-voltage curves obtained in the course of the measurements are briefly discussed.

Controlled growth of Ag-ZnO thin films by thermal evaporation technique for optimized thermoelectric power generation

This manuscript is described the facile and cost-effective growth of silver Zinc Oxide (Ag-ZnO) thin films by simple thermal evaporation method for thermoelectric power generation applications. Growth of samples is started by making pellets of pure silver (Ag) and zinc (Zn) powders which are composed of 1:1 ration and evaporated in vacuum tube furnace. The other growth parameters are fixed as; evaporation time (45 min), evaporation temperature (1010 0C) and oxygen flow rate (60 sccm). Five samples are prepared at different source to substrate distances (6.5–8.5 in.) and post deposition annealing of all samples is carried out at 800 °C using semi-programable muffle furnace. Prepared thin films are analyzed using X-Ray Diffraction (XRD), Raman spectroscopy, Scanning Electron Microscope (SEM) and Seebeck measurements to study the impact of various source to substrate distances on the structural morphological and thermoelectric behavior of Ag-ZnO nanocomposite thin films. The obtained results are revealed that different source to substrate distances strongly influence the structural, morphological, and thermoelectric behavior of prepared thin films. Optimal values for electrical conductivity, Seebeck coefficient and powerful factor of synthesized thin films are calculated as 3.05 × 103 S/m, 645 µV/°C and 1.27 × 10−3 Wm−1 oC−2 respectively at source to substrate distance of 7.0 in.