The impact of multi-layered dielectrics on the electrical performance of ZnO thin-film transistors

Abstract

The electrical performance of ZnO thin film transistors (TFTs) fabricated on three different dielectric layers is investigated using an inverted staggered bottom gate thin film transistor structure. This work demonstrated the potential of integrating high-k dielectrics in ZnO TFTs in a dielectric multi-layered stack using SiO2 as the support layer for all the hero-dielectrics layers. In order to achieve this, ZnO thin film semiconducting layers were deposited at room temperature by radio frequency (RF) sputtering method and with no post deposition heat treatment, making them suitable candidates for low cost large area electronics on low temperature substrates (such as plastics). The dielectric films investigated were aluminium nitride (AlN), silicon nitride (SiN) and silicon dioxide (SiO2). The effective mobility of SiN devices was about half that observed in AlN devices. However, the dielectric layers exhibited hysteresis of approximately 0 V, 2 V and 7 V for the SiO2, AlN and SiN respectively. In addition, SiO2 TFTs have lowest threshold voltage (VT) and turn-on voltage (Von). The capacitance-voltage measurement for these device show that the flatband and threshold voltage of SiN and AlN MOS capacitors shifted towards more negative voltages instead when compared with the single layer SiO2 devices.