Plasma-enhanced Chemical Vapor Deposition Process Research Articles

Gas sensitivity of PECVD β-Ga2O3 films with large active surface

The gas-sensitive properties of Ga2O3 films, first synthesized by plasma-enhanced chemical vapor deposition (PECVD), with respect to gaseous species of environmental and industrial interest were investigated in detail. The addition of some N2 during the PECVD process made it possible to reduce the inherent high resistance of Ga2O3 material and increase its gas sensitivity. The PECVD-Ga2O3 films demonstrated high responses to H2, O2 and NH3 with maximum response temperatures of 600 °C, 700 °C and 350 °C, correspondingly. The responses of Ga2O3 films to 1 vol % of H2, 40 vol % of O2 and 1 vol % of NH3 at these temperatures were 400.73 %, 480.22 % and 335.35 %, correspondingly. The short response and recovery times of 7.6 s and 31.0 s have been achieved under H2 exposure. A plausible mechanism of the sensory effect of the PECVD-Ga2O3 films was suggested. Thus, the PECVD synthesized Ga2O3 films demonstrate a large potential for the development of high-speed performance H2 and O2 sensors working at high temperatures.

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

In this paper, top-gate thin-film transistors (TFTs) of two stacked double-channel layers derived from atomic layer deposition in combination with the plasma-enhanced chemical vapor deposition (PECVD) process were fabricated. The Hall measurement shows that the Hall mobility of the indium gallium oxide (IGO)/indium gallium zinc oxide (IGZO) active layer is 1.6 times more that of the amorphous In-rich IGZO/IGZO layer due to superior carrier percolation conduction paths from the polycrystalline IGO layer. Furthermore, x-ray photoelectron spectroscopy analysis indicates that the IGO/IGZO film has much less oxygen vacancy concentration, which is advantageous in improving not only mobility but also stability. The optimized IGO/IGZO TFT showed both high mobility (38.0 cm2 V−1 s−1) and high stability (ΔVTH = +0.14 V) of a positive bias stress under post-deposition annealing at 250 °C. This strategy provides a feasible process for realizing high-performance TFTs that is compatible with ALD-derived oxides and commercial PECVD techniques in the industry.

Effect of etchant gases on the structure and properties of carbon nanofibers

The utilization of plasma-enhanced chemical vapor deposition (PECVD) for carbon nanofiber (CNF) growth using NH3 as the etchant gas has been extensively documented. Notably, NH3 serves a dual role by etching excess carbon and providing N heteroatoms. Most studies neglect to address this phenomenon, despite the well-known impact of N-doping on CNF properties. Furthermore, NH3 exhibits specific interactions with C2H2—it not only etches excess carbon, but also suppresses the dissociation of C2H2. The implications of this phenomenon on CNF micro- and macroscale morphology have not been comprehensively investigated. To elucidate the influence of etchant gases on CNF structure and properties, we fabricated two types of CNFs - N-doped CNFs (N-CNF) and undoped CNFs (U-CNF). Both were grown on identical substrates using the same carbon source (C2H2) but different etchants (NH3 and H2). Their microstructure and surface chemistry were analyzed using transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). Electrochemical properties were investigated using cyclic voltammetry (CV). U-CNFs were found to have a larger population density and a more disordered structure than N-CNFs. N-doping was confirmed in N-CNFs using XPS analysis, which also revealed differences in relative amounts of sp2 C and O functional groups. U-CNFs exhibited distinct electrochemical properties, including smaller pseudocapacitance, larger potential window, slower outer sphere redox (OSR) kinetics, and diminished dopamine sensitivity. Electrochemical differences were rationalized based on CNF structure and surface chemistry, which, in turn, were attributed to how different etchant gases influence the PECVD process.

Control of nitrogen defects in carbon nanotubes for self-powered memristive systems

Recent studies show that the additional introduction of heteroatoms into the structure of CNTs makes it possible to change their electronic and physical properties [1]. Of great interest is the process of doping CNTs with nitrogen atoms [2]. The introduction of nitrogen defects into a lattice of carbon atoms makes it possible to modify the CNT structure up to the demonstration of anomalous properties that are not appropriate for this material [3]. It has been shown that multi-walled N-CNTs can exhibit memristive and piezoelectric properties [4]. The parameters of CNTs during synthesis can be controlled by the plasma enhanced chemical vapor deposition (PECVD) method. The addition of ammonia (NH3) to the carbonaceous gas in the PECVD process allows CNTs to be doped directly during growth. At the same time, the dopant concentration and the type of nitrogen defects have a significant effect on the properties of CNTs. The memristive properties of CNTs have already been sufficiently studied [5], however, for their application in self-powered systems, additional studies of the parameters of the piezoelectric module of N-CNTs are required. The aim of this work is to study the effect of ammonia flow on the concentration, type of nitrogen defects, and the value of the piezoelectric modulus during growth of CNTs by the PECVD. Silicon (100) substrates were used as samples with films of a buffer (Mo, 100 nm) sublayer and a catalytic layer (Ni, 15 nm). CNTs were grown at a temperature of 550 °C in an atmosphere of acetylene (C2H2, 35 sccm) and NH3. The C2H2 flow was kept constant, while the NH3 flow was changed in the C2H2:NH3 ratio from 1:1 to 1:10. Based on the obtained SEM images, it was found that with an increase in the ratio of C2H2:NH3 flowes, an increase in the density of nanotubes in the array were observed. This occurs due to more active growth of N-CNTs on small nickel catalytic centers due to the accelerated process of hydrogen desorption and its binding with ions in ammonia plasma, which leads to an increase in the growth rate of nanotubes on smaller catalytic centers. Thus, the area of the catalytic center is one of the limiting factors of the growth rate and allows one to control the aspect ratio and density of CNTs in the array. An analysis of the XPS spectra showed that with an increase in the ratio of C2H2:NH3 flows from 1:1 to 1:10, a nonlinear change in the concentration of the nitrogen dopant in N-CNTs from 8.4 to 12 at % is also observed. This led to a nonlinear change in the piezoelectric modulus of nanotubes from 8.7 to 20.6 pm/V and a change in their memristive properties. It has been established that an increase in the concentration of doping nitrogen leads to an increase in the piezoelectric modulus of N-CNTs, which is the source of the memristive effect. The obtained results can be used in the development of energy-efficient piezoelectric nanogenerators based on an array of vertically aligned N-CNTs for autonomous memristive systems.

Tailoring Mechanical Properties of a-C:H:Cr Coatings

The development of coatings with tunable performances is critical to meet a wide range of technological applications each one with different requirements. Using the plasma-enhanced chemical vapor deposition (PECVD) process, scientists can create hydrogenated amorphous carbon coatings doped with metal (a-C:H:Me) with a broad range of mechanical properties, varying from those resembling polymers to ones resembling diamond. These diverse properties, without clear relations between the different families, make the material selection and optimization difficult but also very rich. An innovative approach is proposed here based on projected performance indices related to fracture energy, strength, and stiffness in order to classify and optimize a-C:H:Me coatings. Four different a-C:H:Cr coatings deposited by PECVD with Ar/C2H2 discharge under different bias voltage and pressures are investigated. A path is found to produce coatings with a selective critical energy release rate between 5–125 J/m2 without compromising yield strength (1.6–2.7 GPa) and elastic limit (≈0.05). Finally, fine-tuned coatings are categorized to meet desired applications under different testing conditions.

Hierarchical carbon-coated manganese nitride 3D porous/nickel nanostructure as an electrode material for supercapacitors

The present work reports an effective synthesis method for developing a carbon-coated three-dimensional (3D) porous manganese nitride electrode on a stainless-steel (SS) substrate. The microstructural studies revealed that the carbon-coated metal nitride was deposited uniformly over the 3D-Ni/SS current collector. The carbon-coated manganese nitride (C-Mn3N2) on the 3D Nickel (3D-Ni) electrode delivered a specific capacitance of 311 F g−1 (156 mF cm−2) at 2 A g−1. Moreover, the electrode retained 97.12 % of its capacitance even after 5000 charge–discharge cycles at 5 A g−1, revealing excellent electrochemical stability. These results highlight that the 3D architecture delivered better electrochemical performance, mainly due to the large electroactive area, open porous structure, and direct attachment of electroactive materials with the current collector.

Effect of Fluoride Layer Growth on the Deposition Rate under Different Microchannel Structures.

In the plasma-enhanced chemical vapor deposition (PECVD) process, a showerhead is used to enhance fluid uniformity in the chamber. The uniformity of the flow field will be affected by changing the microchannel on the showerhead, which in turn directly affects the uniformity of deposition. The showerhead will be etched during the cleaning process due to the presence of HF, which will form a fluoride layer. This layer will cause a decrease in the diameter of the microchannels, resulting in changes in the deposition uniformity. The impact of diameter changes can be reduced by making modifications to the microchannel structure. By adopting a coupling of the Navier-Stokes and Direct Simulation Monte Carlo (NS-DSMC) methods, we obtained the velocity variation of two typical microchannels (equal-diameter type and expansion type) under the same diameter change. The results indicate that compared to the equal-diameter type, the expansion type exhibits a smaller change in velocity for the same change in diameter. For the surface reaction limited regime, a stable velocity leads to a consistent residence time, which is advantageous for maintaining the uniformity of the film thickness. Therefore, compared to the equal-diameter type microchannel, the expansion type can reduce the impact of changes in diameter.

Electrochemical sensing platform based on screen-printed carbon electrode modified with plasma polymerized acrylonitrile nanofilms for determination of bupropion

A original electrochemical sensing platform, based on screen-printed electrodes modification with plasma polymerized acrylonitrile (pp-AN) nanofilms is proposed. For that purpose, plasma-enhanced chemical vapor deposition (PECVD) process was conducted in a parallel plate (13.56 MHz) plasma reactor for 2 min with discharge power of 10 W. The surface topography and electrochemical properties of prepared sensors were investigated by X-ray photoelectron spectroscopy, scanning electron microscopy, energy dispersion spectroscopy, electrochemical impedance spectroscopy, and cyclic voltammetry. The electrochemical characteristics of pp-AN/SPCE and pp-AN/SPAuE sensors was investigated for model redox pair [Fe(CN)6]4−/3−. Conducted research confirmed the excellent chemical stability, durability, wide potential window, high signal-to-noise (S/N) ratio, and, most importantly, the ability to standardize the sensors. The pp-AN/SPCE sensor was applied to the determination of bupropion, an antidepressant drug whose intake has increased dramatically during the COVID-19 pandemic. The voltammetric response of pp-AN/SPCE for BUP was linear in two concentration ranges of 0.63–10.0 and 10.0–50.0 μmol L−1, with a detection limit of 0.21 μmol L−1. Satisfactory recoveries (96.2–102%) and good precision (RSD below 4.1%) obtained for environmental and biological samples confirmed the usefulness of the sensor for the analysis of various kinds of samples.Graphical

Advancements in Plasma-Enhanced Chemical Vapor Deposition for Producing Vertical Graphene Nanowalls.

In recent years, vertical graphene nanowalls (VGNWs) have gained significant attention due to their exceptional properties, including their high specific surface area, excellent electrical conductivity, scalability, and compatibility with transition metal compounds. These attributes position VGNWs as a compelling choice for various applications, such as energy storage, catalysis, and sensing, driving interest in their integration into next-generation commercial graphene-based devices. Among the diverse graphene synthesis methods, plasma-enhanced chemical vapor deposition (PECVD) stands out for its ability to create large-scale graphene films and VGNWs on diverse substrates. However, despite progress in optimizing the growth conditions to achieve micrometer-sized graphene nanowalls, a comprehensive understanding of the underlying physicochemical mechanisms that govern nanostructure formation remains elusive. Specifically, a deeper exploration of nanometric-level phenomena like nucleation, carbon precursor adsorption, and adatom surface diffusion is crucial for gaining precise control over the growth process. Hydrogen's dual role as a co-catalyst and etchant in VGNW growth requires further investigation. This review aims to fill the knowledge gaps by investigating VGNW nucleation and growth using PECVD, with a focus on the impact of the temperature on the growth ratio and nucleation density across a broad temperature range. By providing insights into the PECVD process, this review aims to optimize the growth conditions for tailoring VGNW properties, facilitating applications in the fields of energy storage, catalysis, and sensing.

Position-Induced Controllable Growth of Vertically Oriented Graphene Using Plasma-Enhanced Chemical Vapor Deposition.

Because the morphology of vertically oriented graphene (VG) synthesized by the plasma-enhanced chemical vapor deposition process determines the application performance of VG, morphology control is always an important part of the research. A concise correspondence between plasma and the morphology of VG is the key to investigating the morphology control of VG, which is still under research. In this study, a simple but effective parameter, position, is used to grow VG, by which the continuous morphology evolution of VG is realized. As a result, the morphology of VGs varies from a porous structure to a "wall-like" structure, thus leading to a continuous change in its hydrophobicity and thermal emissivity. An ultrahigh emissivity of 0.999 with superhydrophobicity is obtained among these VGs, showing great potential in the area of the black body and infrared thermometer. Finally, the states of active particles in plasma depending on the positions are diagnosed to investigate their relations with the morphology of VGs.

Methyl ammonium iodide via novel PECVD process for the growth of 2-step vacuum based perovskite (MAPbI3) thin films

MAPbI3 thin films were grown via 2-step vacuum based processes by depositing methyl ammonium iodide (MAI) layer as first step using plasma enhanced chemical vapour deposition (PECVD) technique and then depositing lead iodide (PbI2) layer over it as second step using RF-sputtering technique. To the best of our knowledge MAI layer was deposited for the first time by PECVD technique. MAI solution for PECVD process and PbI2 target for sputtering process were made to deposit these two layers under optimized plasma conditions for the growth of MAPbI3 thin films. Characterization techniques like UV-Vis-NIR spectroscopy and Photoluminescence spectroscopy were performed to study the optical properties. Powder-XRD (PXRD) and glancing incidence XRD (GIXRD) were performed to study structural properties. SEM and cross-SEM were performed for morphological study to view top-view and cross-sectional view of the deposited MAPbI3 perovskite thin film. Perovskite thin films deposited on silicon wafer have been used as perovskite/silicon heterojunction photodiode exhibiting critical performance parameters such as rectifying ratio of 1.58 × 104 at 1.0 V, photo-sensitivity value 7.46 × 102 at light intensity 100 mw/cm2 without biasing.

Poly‐SiOx Passivating Contacts with Plasma‐Assisted N2O Oxidation of Silicon (PANO‐SiOx)

Passivating contacts are crucial for realizing high‐performance crystalline silicon solar cells. Herein, contact formation by plasma‐enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly‐SiOx passivating contacts by combining plasma‐assisted N2O‐based oxidation of silicon (PANO‐SiOx) with a thin film of phosphorus (n+) or boron (p+)‐doped hydrogenated amorphous silicon oxide (a‐SiOx:H) are manufactured. Postannealing is conducted for transitioning a‐SiOx:H into poly‐SiOx. The aim is to achieve a contact with low absorption and high‐quality passivation. It is demonstrated that by tuning the plasma oxidation process time and power, the PANO‐SiOx thickness and its passivation quality can be controlled. A higher SiO2 content is observed in PANO‐SiOx than in the nitric acid oxidation of silicon (NAOS‐SiOx) counterpart. PANO‐SiOx acts as a stronger diffusion barrier for both boron and phosphorus atoms compared to NAOS‐SiOx, affecting the dopant distribution during annealing. Implied open‐circuit voltages up to 751 and 710 mV for n+ and p+ flat symmetric samples, respectively, are demonstrated. With respect to standard thermally grown SiO2 tunneling oxide combined with (in/ex )situ‐doped low‐pressure chemical vapor deposition poly‐Si, this study presents a simple alternative for manufacturing passivating contact fully based on PECVD processes.

Foundations of plasma enhanced chemical vapor deposition of functional coatings

Since decades, the PECVD (‘plasma enhanced chemical vapor deposition’) processes have emerged as one of the most convenient and versatile approaches to synthesize either organic or inorganic thin films on many types of substrates, including complex shapes. As a consequence, PECVD is today utilized in many fields of application ranging from microelectronic circuit fabrication to optics/photonics, biotechnology, energy, smart textiles, and many others. Nevertheless, owing to the complexity of the process including numerous gas phase and surface reactions, the fabrication of tailor-made materials for a given application is still a major challenge in the field making it obvious that mastery of the technique can only be achieved through the fundamental understanding of the chemical and physical phenomena involved in the film formation. In this context, the aim of this foundation paper is to share with the readers our perception and understanding of the basic principles behind the formation of PECVD layers considering the co-existence of different reaction pathways that can be tailored by controlling the energy dissipated in the gas phase and/or at the growing surface. We demonstrate that the key parameters controlling the functional properties of the PECVD films are similar whether they are inorganic- or organic-like (plasma polymers) in nature, thus supporting a unified description of the PECVD process. Several concrete examples of the gas phase processes and the film behavior illustrate our vision. To complete the document, we also discuss the present and future trends in the development of the PECVD processes and provide examples of important industrial applications using this powerful and versatile technology.

Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Temperature plays an important role in the synthesis of graphene by chemical vapor deposition. In the low-temperature plasma-enhanced chemical vapor deposition (PECVD) process, although the cleavage of hydrocarbon precursor no longer depends on growth temperature, which can affect the nucleation and growth of graphene by the diffusion and adsorption of active species, the catalytic ability of substrate and other factors, and ultimately lead to various growth of graphene. In this paper, the nucleation and growth of graphene at different temperatures by PECVD were studied. We noted that the nucleation and growth of graphene varied greatly in different temperature zones. Graphene could not be grown at low temperatures (< 600 ℃). At the medium and low temperature (650 ∼ 800 ℃), high nucleation density of graphene with nanometer size were produced. In the middle and high temperature region (850 ∼ 900 ℃), larger grains of graphene grown, and in the high temperature region (> 950 ℃), the coexistence of large and small grains was finally formed. In addition, the models of the nucleation and growth of graphene in different temperature zones were proposed.

Facile synthesis of homogeneously dispersed carbon nanotubes on TC4 alloy powder by in-situ CVD and its growth behavior

We developed a simple method of in-situ synthesize carbon nanotubes (CNTs) on Ti–6Al–4V (TC4) alloy powder to fabricate CNTs/TC4 compound powders through plasma-enhanced chemical vapor deposition (PECVD). By this approach, CNTs on TC4 alloy powder exhibit better uniform dispersion and morphology compared with the traditional CVD methods. In order to reveal the growth behavior of CNTs during the PECVD process, XRD, SEM, TEM, and Raman spectroscopy were used to analyze the morphology and graphitization of CNTs at different synthesis conditions. The plasma is benefit to the pyrolysis of CH4, but overmuch plasma bombardment also reduces the yield and quality of CNTs. The number of CNTs can be significantly improved with appropriately increasing the temperature and time, but excessive temperature, time and carbon concentration can increase the number of impurities such as amorphous carbon. Significantly, the growth mechanism of CNTs synthesized in TC4 powders is following tip-growth mode in PECVD process. Additionally, the quantity and quality were satisfactory at 600 °C for 30 min with 50 W plasma power. This study about PECVD process lays a foundation for improving the comprehensive properties of CNTs/TC4 composites in the future.

Boron Carbonitride Films with Tunable Composition: LPCVD and PECVD Synthesis Using Trimethylamine Borane and Nitrogen Mixture and Characterization

This study reports the chemical vapor deposition of amorphous boron carbonitride films on Si(100) and SiO2 substrates using a trimethylamine borane and nitrogen mixture. BCxNy films with different compositions were produced via variations in substrate temperature and type of gas-phase activation. The low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) methods were used. The “elemental composition—chemical bonding state—properties” relationship of synthesized BCxNy was systematically studied. The hydrophilicity, mechanical, and optical properties of the films are discussed in detail. The composition of films deposited by the LPCVD method at temperatures ranging from 673 to 973 K was close to that of boron carbide with a low nitrogen content (BCxNy). The refractive index of these films changed in the range from 2.43 to 2.56 and increased with temperature. The transparency of these films achieved 85%. LPCVD films were hydrophilic and the water contact angles varied between 53 and 63°; the surface free energy was 42–48 mN/m. The microhardness, Young’s modulus and elastic recovery of LPCVD films ranged within 24–28 GPa, 220–247 GPa, and 70–74%, respectively. The structure of the PECVD films was close to that of hexagonal boron nitride, and their composition can be described by the BCxNyOz:H formula. In case of the PECVD process, the smooth films were only produced at low deposition temperatures (373–523 K). The refractive index of these films ranged from 1.51 to 1.67. The transparency of these films achieved 95%; the optical band gap was evaluated as 4.92–5.28 eV. Unlike LPCVD films, they were very soft, and their microhardness, Young’s modulus and elastic recovery were 0.8–1.4 GPa, 25–26 GPa, and 19–28%, respectively. A set of optimized process parameters to fabricate LPCVD BCxNy films with improved mechanical and PECVD films with high transparency is suggested.

Zn:DLC films via PECVD-HIPIMS: Evaluation of antimicrobial activity and cytotoxicity to mammalian cells

DLC films were grown with Zn via a combined plasma-enhanced chemical vapor deposition (PECVD) and high-power impulse magnetron sputtering (HIPIMS) process. The films were deposited on textiles in an atmosphere of Ar and C2H2, and the percentage of metal in the DLC was varied by controlling the acetylene gas flow. At first, to evaluate the antimicrobial activity, a screening test with the ISO 22196 standard was carried out. Afterward, AATCC TM100:2019 was used to evaluate the antimicrobial effectiveness of the films on textiles. The antimicrobial effectiveness of the coating was studied against a Gram-negative bacterium (Escherichia coli), a Gram-positive bacterium (Staphylococcus aureus), and a fungus (Candida albicans), after a 24 h contact. In addition, the cytotoxicity of the samples to mammalian cells was evaluated by indirect contact. For this, the samples were soaked into the growth media for 1 and 7 days, and then, the extracts were collected and put in contact with keratinocytes for 24 h. Finally, the properties of the films were also evaluated as a function of the Zn content, such as their structural quality, morphology, hardness, wear resistance, and coefficient of friction. The films showed excellent results against all microorganisms, with 100% effectiveness in some cases. The pure extracts obtained from all the samples with the incorporation of metals were cytotoxic. Despite that, the cell viability after contact with some Zn-DLC diluted extracts (10%) was not different from that observed in the uncoated group. Besides, increasing the Zn content resulted in a film with poorer mechanical properties but did not affect the coefficient of friction of the coating.

Enhanced electrical stability of thin film transistors based on nanocrystalline silicon films

In this work, nanocrystalline silicon (nc-Si) films were achieved by using normally processing method of amorphous silica thin film transistors (a-Si TFTs), plasma enhanced chemical vapor deposition (PECVD). The effects of PECVD process parameters on the crystallization rate of nc-Si films were comprehensively studied and then an optimized nc-Si film has been achieved with a crystallinity of 50.87%. The electrical properties and stability of nc-Si TFTs are further investigated and compared with a-Si TFTs. The ΔV th of the nc-Si TFTs are 0.14 V and −3.32 V under positive bias-temperature-illumination stress (60 °C, 30 V, 6000 nit) and negative bias-temperature-illumination stress (60 °C, −30 V, 6000 nit) after 1 h, which are 1.96 V and −5.51 V for a-Si TFT, respectively. The result reveals better photo stability of nc-Si TFTs than a-Si TFTs which is attributed to fewer defect states in nc-Si films.

Effect of C2H2 flow rate and a Ti/TiN/TiCN interlayer on the structure, mechanical and tribological properties of a-C:H films deposited using a hybrid PVD/PECVD process with an anode-layer ion source

Diamond-like carbon (DLC) films were deposited onto 316L stainless steel using the hybrid physical vapor deposition (PVD)/plasma-enhanced chemical vapor deposition (PECVD) process with an auxiliary anode-layer ion source at C2H2 flow rates of 40–100 sccm to enhance mechanical and tribological properties of a-C:H films. The films were characterized using transmission electron microscope (TEM), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nanoindentation and ball-on-disk rubbing tribometry. The hardness, tribological properties and interfacial bonding were significantly improved in the presence of the Ti/TiN/TiCN interlayer deposited by high-power impulse magnetron sputtering (HiPIMS). Results showed that a-C:H films were uniform and dense, the sp3 C content increased with an increase in the C2H2 flow rate from 40 to 80 sccm, and decreased when it was further increased to 100 sccm. The a-C:H film with the interlayer prepared at 80 sccm C2H2 exhibited the highest hardness (27.2 ± 0.5 GPa), H/E (0.137), and H3/E2 (0.510). Moreover, friction-wear tests demonstrated that the incorporation of the Ti/TiN/TiCN layer increased the wear resistance of the a-C:H film, achieving the lowest coefficient of friction (CoF, 0.148), wear rate (1.08 × 10−9 mm3 N−1 mm−1) and width of the wear track (177 μm) at 80 sccm C2H2.

Beam Trajectory Analysis of Vertically Aligned Carbon Nanotube Emitters with a Microchannel Plate

Vertically aligned carbon nanotubes (CNTs) are essential to studying high current density, low dispersion, and high brightness. Vertically aligned 14 × 14 CNT emitters are fabricated as an island by sputter coating, photolithography, and the plasma-enhanced chemical vapor deposition process. Scanning electron microscopy is used to analyze the morphology structures with an average height of 40 µm. The field emission microscopy image is captured on the microchannel plate (MCP). The role of the microchannel plate is to determine how the high-density electron beam spot is measured under the variation of voltage and exposure time. The MCP enhances the field emission current near the threshold voltage and protects the CNT from irreversible damage during the vacuum arc. The high-density electron beam spot is measured with an FWHM of 2.71 mm under the variation of the applied voltage and the exposure time, respectively, which corresponds to the real beam spot. This configuration produces the beam trajectory with low dispersion under the proper field emission, which could be applicable to high-resolution multi-beam electron microscopy and high-resolution X-ray imaging technology.