Control of nitrogen defects in carbon nanotubes for self-powered memristive systems

Abstract

Recent studies show that the additional introduction of heteroatoms into the structure of CNTs makes it possible to change their electronic and physical properties [1]. Of great interest is the process of doping CNTs with nitrogen atoms [2]. The introduction of nitrogen defects into a lattice of carbon atoms makes it possible to modify the CNT structure up to the demonstration of anomalous properties that are not appropriate for this material [3]. It has been shown that multi-walled N-CNTs can exhibit memristive and piezoelectric properties [4]. The parameters of CNTs during synthesis can be controlled by the plasma enhanced chemical vapor deposition (PECVD) method. The addition of ammonia (NH3) to the carbonaceous gas in the PECVD process allows CNTs to be doped directly during growth. At the same time, the dopant concentration and the type of nitrogen defects have a significant effect on the properties of CNTs. The memristive properties of CNTs have already been sufficiently studied [5], however, for their application in self-powered systems, additional studies of the parameters of the piezoelectric module of N-CNTs are required. The aim of this work is to study the effect of ammonia flow on the concentration, type of nitrogen defects, and the value of the piezoelectric modulus during growth of CNTs by the PECVD. Silicon (100) substrates were used as samples with films of a buffer (Mo, 100 nm) sublayer and a catalytic layer (Ni, 15 nm). CNTs were grown at a temperature of 550 °C in an atmosphere of acetylene (C2H2, 35 sccm) and NH3. The C2H2 flow was kept constant, while the NH3 flow was changed in the C2H2:NH3 ratio from 1:1 to 1:10. Based on the obtained SEM images, it was found that with an increase in the ratio of C2H2:NH3 flowes, an increase in the density of nanotubes in the array were observed. This occurs due to more active growth of N-CNTs on small nickel catalytic centers due to the accelerated process of hydrogen desorption and its binding with ions in ammonia plasma, which leads to an increase in the growth rate of nanotubes on smaller catalytic centers. Thus, the area of the catalytic center is one of the limiting factors of the growth rate and allows one to control the aspect ratio and density of CNTs in the array. An analysis of the XPS spectra showed that with an increase in the ratio of C2H2:NH3 flows from 1:1 to 1:10, a nonlinear change in the concentration of the nitrogen dopant in N-CNTs from 8.4 to 12 at % is also observed. This led to a nonlinear change in the piezoelectric modulus of nanotubes from 8.7 to 20.6 pm/V and a change in their memristive properties. It has been established that an increase in the concentration of doping nitrogen leads to an increase in the piezoelectric modulus of N-CNTs, which is the source of the memristive effect. The obtained results can be used in the development of energy-efficient piezoelectric nanogenerators based on an array of vertically aligned N-CNTs for autonomous memristive systems.