Position-Induced Controllable Growth of Vertically Oriented Graphene Using Plasma-Enhanced Chemical Vapor Deposition.

Abstract

Because the morphology of vertically oriented graphene (VG) synthesized by the plasma-enhanced chemical vapor deposition process determines the application performance of VG, morphology control is always an important part of the research. A concise correspondence between plasma and the morphology of VG is the key to investigating the morphology control of VG, which is still under research. In this study, a simple but effective parameter, position, is used to grow VG, by which the continuous morphology evolution of VG is realized. As a result, the morphology of VGs varies from a porous structure to a "wall-like" structure, thus leading to a continuous change in its hydrophobicity and thermal emissivity. An ultrahigh emissivity of 0.999 with superhydrophobicity is obtained among these VGs, showing great potential in the area of the black body and infrared thermometer. Finally, the states of active particles in plasma depending on the positions are diagnosed to investigate their relations with the morphology of VGs.