Abstract
The plasma-enhanced chemical vapor deposition (PECVD) is an effective method for producing vertically-oriented graphene (VG) sheets, but it is also a very complex one because of the complexity associated with the plasma chemistry. In addition to the type of plasma sources discussed in Chap. 3, the morphology and structure of the PECVD-produced VG sheets are also strongly affected by a set of operating parameters, including precursors (e.g., feedstock gas type and composition, plasma gas type), the substrate temperature, and the operating pressure. In this chapter, we discuss two important operating parameters for the synthesis of VG in the PECVD process, specifically precursor and temperature.
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