Plasma-enhanced Chemical Vapor Deposition System Research Articles

Cotton fabric surface treatment by plasma-deposited hexamethyldisilazane thin films

In the realm of fabric finishing, achieving the best wettability in cotton fabric is often a desired outcome. To accomplish this, a plasma-enhanced chemical vapor deposition (PECVD) system was used to deposit Hexamethyldisilazane (HMDSN) thin films onto cotton fabric for two different durations: 15 and 30 minutes. Various fabric properties were evaluated to determine the effectiveness of the treatment, including wettability, surface morphology, chemical structure, the effect of deposition on fabric stiffness, and the film fastness on the abrasion and washing. These properties were assessed using SEM, FTIR, and Martindale tester. Results indicated that both treatment durations improved the fabric's wicking ability. However, the film did not have a good fastness on abrasion and washing.

Protection of Si Nanowires against Aβ Toxicity by the Inhibition of Aβ Aggregation.

Alzheimer's disease (AD) is a progressive neurodegenerative disease characterized by the accumulation of amyloid beta (Aβ) plaques in the brain. Aβ1-42 is the main component of Aβ plaque, which is toxic to neuronal cells. Si nanowires (Si NWs) have the advantages of small particle size, high specific surface area, and good biocompatibility, and have potential application prospects in suppressing Aβ aggregation. In this study, we employed the vapor-liquid-solid (VLS) growth mechanism to grow Si NWs using Au nanoparticles as catalysts in a plasma-enhanced chemical vapor deposition (PECVD) system. Subsequently, these Si NWs were transferred to a phosphoric acid buffer solution (PBS). We found that Si NWs significantly reduced cell death in PC12 cells (rat adrenal pheochromocytoma cells) induced by Aβ1-42 oligomers via double staining with 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) and fluorescein diacetate/propyl iodide (FDA/PI). Most importantly, pre-incubated Si NWs largely prevented Aβ1-42 oligomer-induced PC12 cell death, suggesting that Si NWs exerts an anti-Aβ neuroprotective effect by inhibiting Aβ aggregation. The analysis of Fourier Transform Infrared (FTIR) results demonstrates that Si NWs reduce the toxicity of fibrils and oligomers by intervening in the formation of β-sheet structures, thereby protecting the viability of nerve cells. Our findings suggest that Si NWs may be a potential therapeutic agent for AD by protecting neuronal cells from the toxicity of Aβ1-42.

The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films

This study reports the impact of film microstructure and composition on the Young’s modulus and residual stress in nanocrystalline diamond (NCD) thin films (≈250nm thick) grown on silicon substrates using a linear antenna microwave plasma-enhanced chemical vapor deposition (CVD) system. Combining laser acoustic wave spectroscopy to determine the elastic properties with simple wafer curvature measurements, a straightforward method to determine the intrinsic stress in NCD films is presented. Two deposition parameters are varied: (1) the substrate temperature from 400°C to 900°C, and (2) the [P]/[C] ratio from 0ppm to 8090ppm in the H2/CH4/CO2/PH3 diamond CVD plasma. The introduction of PH3 induces a transition in the morphology of the diamond film, shifting from NCD with larger grains to ultra-NCD with a smaller grain size, concurrently resulting in a decrease in Young’s modulus. Results show that the highest Young’s modulus of (1130±50)GPa for the undoped NCD deposited at 800°C is comparable to single crystal diamond, indicating that NCD with excellent mechanical properties is achievable with our process for thin diamond films. Based on the film stress results, we propose the origins of tensile intrinsic stress in the diamond films. In NCD, the tensile intrinsic stress is attributed to larger grain size, while in ultra-NCD films the tensile intrinsic stress is due to grain boundaries and impurities.

Carbon Nanowalls as Anode Materials with Improved Performance Using Carbon Nanofibers.

In this paper, a new synthesis of carbon nanofibers (CNFs)/carbon nanowalls (CNWs) was performed to improve the characteristics of anode materials of lithium-ion batteries by using the advantages offered by CNWs and CNFs. Among the carbon-based nanomaterials, CNWs provide low resistance and high specific surface area. CNFs have the advantage of being stretchable and durable. The CNWs were grown using a microwave plasma-enhanced chemical vapor deposition (PECVD) system with a mixture of methane (CH4) and hydrogen (H2) gases. Polyacrylonitrile (PAN) and N,N-Dimethyl Formamide (DMF) were stirred to prepare a solution and then nanofibers were fabricated using an electrospinning method. Heat treatment in air was then performed using a hot plate for stabilization. In addition, heat treatment was performed at 800 °C for 2 h using rapid thermal annealing (RTA) to produce CNFs. A field emission scanning electron microscope (FE-SEM) was used to confirm surface and cross-sectional images of the CNFs/CNWs anode materials. Raman spectroscopy was used to examine structural characteristics and defects. Cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and constant current charge/discharge tests were performed to analyze the electrical characteristics. The synthesized CNFs/CNWs anode material had a CV value in which oxidation and reduction reactions were easily performed, and a low Rct value of 93 Ω was confirmed.

SiOx/polysilicon selective emitter prepared by PECVD-deposited amorphous silicon plus one-step firing enabling excellent J0,met of < 235 fA/cm2 and ρc of < 2 mΩ·cm2

Boron(B)-doped polysilicon (poly-Si) is the key element to achieve high efficiency and low-cost bifacial tunnel oxide passivated contact (TOPCon) silicon solar cells. In this work, we explore the feasibility of using a plasma-enhanced chemical vapor deposition (PECVD) system to prepare the high-performance poly-Si fingers as selective emitters (poly-finger SE) through depositing nano SiOx and B-doped amorphous silicon plus one-step annealing process. It is found that the poly-finger SE not only reduces the recombination current density under metal contacts (J0,met) from ∼ 1300 fA/cm2 to ∼ 230 fA/cm2, while maintaining a low contact resistivity (ρc) of ∼ 1.6 mΩ·cm2. Additionally, numerical simulations indicate that n-type Si solar cells with poly-finger SE can achieve a high efficiency of 25.36% based on the most advanced device manufacturing technology and the above-mentioned passivation and contact performances. The open-circuit voltage (Voc) increased by 11.1 mV and 4.8 mV compared to controlled and laser SE TOPCon solar cells, manifesting the efficiency increase of 0.39% and 0.20%. Overall, this work presents a new method to enhance the efficiency of TOPCon devices.

Improving the Electromigration Life of Advanced Interconnects through Graphene Capping

Since the discovery of graphene, 2D materials are establishing a rapidly growing and promising field, with great potential for diverse applications given their excellent conductivity and high transparency. In particular, graphene can isolate external chemical reactions when applied to back-end-of-line (BEOL) interconnect metals, thereby preventing the oxidation of the interconnect metals. In addition, it can improve the conductivity and breakdown current density of interconnects. However, the thermal budget remains an important problem in BEOL interconnects. We demonstrate an advanced graphene deposition method using an in-house plasma plasma-enhanced chemical vapor deposition system, which offers low thermal budget and high stability. We also optimize carbon precursors to improve the quality of graphene on Ru and Co thin films. We show the improvement of electrical conductivity, electromigration lifetime, and maximum breakdown current density after capping Ru and Co interconnects with graphene. The electromigration lifetimes of the Ru and Co interconnects increase by 4 and 4.5 times, respectively, and their maximum breakdown current density increases by 17.6 and 10.6%, respectively. The results show that capping with graphene has a high potential in BEOL applications.

Fluorobenzene and Water-Promoted Rapid Growth of Vertical Graphene Arrays by Electric-Field-Assisted PECVD.

Vertical graphene (VG) arrays show exposed sharp edges, ultra-low electrical resistance, large surface-to-volume ratio, and low light reflectivity, thus having great potential in emerging applications, including field emission, sensing, energy storage devices, and stray light shields. Although plasma enhanced chemical vapor deposition (PECVD) is regarded as an effective approach for the synthesis of VG, it is still challenging to increase the growth rate and height of VG arrays simultaneously. Herein, a fluorobenzene and water-assisted method to rapidly grow VG arrays in an electric field-assisted PECVD system is developed. Fluorobenzene-based carbon sources are used to produce highly electronegative fluorine radicals to accelerate the decomposition of methanol and promote the growth of VG. Water is applied to produce hydroxyl radicals in order to etch amorphous carbon and accelerate the VG growth. The fastest growth rate can be up to 15.9µm h-1 . Finally, VG arrays with a height of 144µm are successfully synthesized at an average rate of 14.4µm h-1 . As a kind of super black material, these VG arrays exhibit an ultra-low reflectance of 0.25%, showing great prospect in stray light shielding.

Effects of High-Quality Carbon Nanowalls Ionization-Assisting Substrates on Surface-Assisted Laser Desorption/Ionization Mass Spectrometry Performance.

Surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS) is performed using carbon nanowalls (CNWs) for ionization-assisting substrates. The CNWs (referred to as high-quality CNWs) in the present study were grown using a radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) system with the addition of oxygen in a mixture of CH4 and H2 gases. High-quality CNWs were different with respect to crystallinity and C-OH groups, while showing similar wall-to-wall distances and a wettability comparable to CNWs (referred to as normal CNWs) grown without O2. The efficiency of SALDI was tested with both parameters of ion intensity and fragmental efficiency (survival yield (SY)) using N-benzylpyridinuim chloride (N-BP-CI). At a laser fluence of 4 mJ/cm2, normal CNWs had an SY of 0.97 and an ion intensity of 0.13, while 5-sccm-O2- high-quality CNWs had an SY of 0.89 and an ion intensity of 2.55. As a result, the sensitivity for the detection of low-molecular-weight analytes was improved with the high-quality CNWs compared to the normal CNWs, while an SY of 0.89 was maintained at a low laser fluence of 4 mJ/cm2. SALDI-MS measurements available with the high-quality CNWs ionization-assisting substrate provided high ionization and SY values.

Controlling Surface Wettability and Plasmonic Resonance of Au/ZnO Heterostructured Films

This work investigated the (0002) textured ZnO films without and with the addition of an Au continuous top layer and its effects on their surface wettability and plasmonic resonance characteristics. The ZnO films were directly fabricated onto glass substrates at the synthesized temperature of 300 °C via a plasma-enhanced chemical vapor deposition (PECVD) system, and the as-synthesized ZnO film exhibited an average optical transmittance value of 85%. The ultraviolet (UV) light irradiation can be applied to enhance the hydrophilicity, changing it from a hydrophobic status to hydrophilic status due to the existing and adjustable characteristics of the photocatalytic activity. On the other hand, the surface wetting/contact angle (CA) value of the ZnO film with a controllable surface wettability switched from 94° (hydrophobicity) to 44° (hydrophilicity), after it was exposed to UV light irradiation for 5 min, and stably reversed back to hydrophobicity (92°) via a post-annealed treatment using rapid thermal annealing (RTA) at 350 °C for 5 min in air. A fast, simple, and reversible method for switching between hydrophilic and hydrophobic status is claimed in this present work. The improved surface plasmonic resonance is owning to the coupled electron and photon oscillations that can be obtained and produced at the interface between the flat Au layer and ZnO (metal/metallic oxide) heterostructured films for future applications of various wide-bandgap compound semiconductors.

Effect of low-pressure deposition on the mechanical and tribological properties of a-C:H films deposited via modified pulsed-DC PECVD with active screen as an additional cathode

Due to their attractive mechanical, chemical, tribological, and biological properties, diamond-like carbon (DLC) coatings are widely used in many industrial applications. Normally, the deposition of amorphous hydrogenated carbon (a-C:H) films is obtained via the plasma-enhanced chemical vapor deposition (PECVD) technique. Recently, a modified pulsed-DC PECVD technique has attracted attention in this field due to its making it possible to grow a-C:H films at low-pressures (up to 0.1 Pa) in a collision less regime, leading to the achievement of improved mechanical and tribological properties. The incorporation of an additional cathode allows the confinement of electrons and ions, stabilizing and densifying the cold plasma at much lower pressure than conventional PECVD systems. This method is distinguished by higher energy and acceleration of the C+ ions, simpler reactor system equipment, and lower operating cost. In the present investigation, hydrogenated amorphous carbon films were grown on AISI 316 stainless steel using a thin amorphous silicon interlayer to improve interface adherence. The characterization of the coatings allowed identifying the influence of the deposition pressure on the microstructural, mechanical, and tribological properties and the film's adherence. The main results indicate that obtaining films with high hardness, low compressive stress, low coefficient of friction, high wear resistance, and appropriate adhesion is possible at deposition pressures almost 100 times lower than conventional PECVD techniques.

Optical and Mechanical Properties of Europium-Doped Silicon Oxynitride Thin Films

Light emission from silicon-based systems has gained significant interest over the past few decades with the vision of developing an optoelectronic platform that can be integrated with the existing metal-oxide-semiconductor (MOS) technology [1]. Rare earth doping of silicon-based materials is a promising approach to fabricating efficient light emitting devices because of their excellent luminescence properties and their chemical stability [2]. Europium (Eu) ions are attractive dopants for silicon photonic applications due to their intense emission in the visible spectral region. The efficiency of such photonic devices can be influenced by the mechanical properties of the Eu-doped films. Thus, the integration of these films in photonic devices requires an understanding of their mechanical properties as well. In this work, we discuss the relationship between the photoluminescence (PL) behavior and the elasticity and hardness of Eu doped silicon oxynitride (SiON) thin films.We have fabricated thin films using an electron cyclotron resonance plasma-enhanced chemical vapor deposition system with integrated magnetron sputtering system [3] on p-type 3” Si (100) substrates. Silane (diluted in 90% argon) and nitrogen (diluted in 90% argon) were used as precursor gases, while a 99.9% pure Eu sputtering target was used as a sputtering source. Different sets of samples were fabricated by changing the sputtering power and argon flow rate to understand the effect of deposition parameters on the dopant concentration and the optical and mechanical properties. Post-deposition annealing in nitrogen and a mixture of nitrogen with hydrogen (5%) were performed over a wide range of temperatures from 600° to 1100° C. The effect of hydrogen passivation was studied as well. The atomic concentration of the constituents was identified by Rutherford backscattering spectrometry. Optical properties were investigated by variable angle spectroscopic ellipsometry (VASE) analysis. The PL spectra were obtained at room temperature with a laser diode excitation source, operating at a wavelength of 375nm. Finally, we performed nanoindentation measurements to understand the deformation behavior of SiON films with the incorporation of Eu. The indentation hardness and Young’s modulus of the films were investigated, respectively, for different Eu concentrations and different deposition parameters.Reference[1] A. Moadhen, H. Elhouichet, M. Oueslati, and M. Férid, “Photoluminescence properties of europium-doped porous silicon nanocomposites,” J. Lumin., vol. 99, no. 1, pp. 13–17, 2002, doi: 10.1016/S0022-2313(02)00322-8.[2] Z. Lin R. Huang, H. Wang, Y. Wang, Y. Zhang, Y. Gao, J. Song, C. Song, H. Li, “Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films,” J. Alloys Compd., vol. 694, pp. 946–951, 2017, doi: 10.1016/j.jallcom.2016.10.132.[3] J. W. Miller, Z. Khatami, J. Wojcik, J. D. B. Bradley, and P. Mascher, “Integrated ECR-PECVD and magnetron sputtering system for rare-earth-doped Si-based materials,” Surf. Coatings Technol., vol. 336, pp. 99–105, 2018, doi: 10.1016/j.surfcoat.2017.08.051.

Effect of precursor gas inlet position relative to hot wire cells in HWC-IP-PECVD systems for low-temperature graphene growth

ABSTRACT Graphene growth at low temperatures was investigated by integrating a hot wire cell made from coil-shaped tungsten into a plasma-enhanced chemical vapour deposition (PECVD) system. It was found that the suitable position of the hot wire was such that the precursor gas comes out of the end of the gas pipeline and directly flows into the hot wire along its axis. This position puts the gas pipeline outside of plasma area, yielding uninterrupted plasma. The obtained films, which were grown at a low temperature between 290 °C to 300 °C, showed the presence of sharp G band in Raman spectra, indicating the presence of graphitic carbon structure and was confirmed by X-Ray Diffraction data. Also, sharp D band was detected in Raman spectra, which indicated that the film contains many defects. In addition to the nature of ion bombardment in the PECVD process, the defects were due to the addition of O-H functional groups and the formation of sp3 C-H in the samples, as shown in the FTIR spectra. Due to these defects, the Raman spectra obtained of the films showed very weak 2D bands, suggesting that our samples were in the form of graphene oxide.

Experimental Study of the Influence of CH4 and H2 on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.

Silicon carbide (SiC) has become an extraordinary photonic material. Achieving reproducible self-formation of silicon quantum dots (SiQDs) within SiC matrices could be beneficial for producing electroluminescent devices operating at high power, high temperatures, or high voltages. In this work, we use a remote plasma-enhanced chemical vapor deposition system to grow SiC thin films. We identified that a particular combination of 20 sccm of CH4 and a range of 58–100 sccm of H2 mass flow with 600 °C annealing allows the abundant and reproducible self-formation of SiQDs within the SiC films. These SiQDs dramatically increase the photoluminescence-integrated intensity of our SiC films. The photoluminescence of our SiQDs shows a normal distribution with positive skewness and well-defined intensity maxima in blue regions of the electromagnetic spectrum (439–465 nm) and is clearly perceptible to the naked eye.

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

We present a systematic study of emitter formation with dopant diffusion from boron (B)-doped hydrogenated silicon oxide (a-SiOx:H) deposited on textured n-type monocrystalline silicon (n-c-Si) wafers using a 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD) system. The B atoms in the a-SiOx:H are activated and diffused into the n-c-Si wafer during a high-temperature annealing to form a p/n junction for solar cell application. Afterward, the B-doped SiOx layer is removed by hydrofluoric acid selective etching to obtain a clean surface for the deposition of AlOx passivation and SiNx antireflection layers. With the optimization of the PECVD deposition and the following annealing/etching processes, the B diffused region with a sheet resistance of 60–100 Ω/sq and a junction depth of 1.2–1.5 μm is obtained. A champion implied open-circuit voltage (iVoc) of 705 mV and a single-side saturated recombination current density (J0,s) of 17.6 fA/cm2 are obtained from a double-sided B diffused sample after the passivation with an atomic-layer-deposition (ALD) AlOx. In addition, the contact resistivity (ρc) at the metal/emitter interface is lower than 5 mΩcm2, where the metal contact is a Ti/Pd/Ag tri-layer structure. All of the material properties meet the requirements of high-efficiency solar cell. With the optimized emitter in the front, we made a SiOx and heavily phosphorus-doped polycrystalline silicon carbide (n-poly-SiCx) stack on the rear surface to form tunnel oxide passivated contact (TOPCon) solar cells. The results show that the iVoc of semi-finished TOPCon solar cell before metallization is more than 725 mV. Finally, a TOPCon solar cell with an efficiency of 24.24% is obtained, which is comparable with the TOPCon solar cells with the industrial thermally diffused emitter.

Thermal and Mechanical Properties of Amorphous Silicon Carbide Thin Films Using the Femtosecond Pump-Probe Technique

Nanoscale amorphous silicon carbide (a-SiC) thin films are widely used in engineering applications. It is important to obtain accurate information about their material properties because they often differ from those of the bulk state depending on the fabrication technique and process parameters. In this study, the thermal and mechanical properties of a-SiC thin films were evaluated using the femtosecond pump-probe technique, which provides high spatial and temporal resolutions sufficient to measure films that have a thickness of less than 300 nm. a-SiC films were grown using a plasma-enhanced chemical vapor deposition system, and the surface characteristics were analyzed using ellipsometry, atomic force microscopy, and X-ray reflectometry. The results show that the out-of-the-plane thermal conductivity of the films is lower than that of bulk crystalline SiC by two orders of magnitude, but the lower limit is dictated by the minimum thermal conductivity. In addition, a decrease in the mass density resulted in a reduced Young’s modulus by 13.6–78.4% compared to the literature values, implying low Si-C bond density in the microstructures. The scale effect on both thermal conductivity and Young’s modulus was not significant.

Scaffolds with isolated carbon nanowalls promote osteogenic differentiation through Runt-related transcription factor 2 and osteocalcin gene expression of osteoblast-like cells

Carbon nanowalls (CNWs) with average wall-to-wall distances ranging from 100 to 3300 nm were synthesized using a radical injection plasma-enhanced chemical vapor deposition system. Application of a negative high voltage to the growth substrate using an inductor energy storage (IES) circuit provided CNWs with wall-to-wall distances depending on the nano-second pulse voltage of the IES circuit. Sparse isolated CNWs with average wall-to-wall distances of 700 nm were used for culturing Saos-2 cells. These cells showed better adhesion than the control after 2 days’ incubation and enhanced gene expression of the osteogenic differentiation genes Runt-related transcription factor 2 (Runx2) and osteocalcin after 10 days’ incubation. Sparse isolated CNW scaffolds hold promise for regulating the differentiation of osteoblast-like cells.

Growth Properties of Carbon Nanowalls on Nickel and Titanium Interlayers.

This research is conducted in order to investigate the structural and electrical characteristics of carbon nanowalls (CNWs) according to the sputtering time of interlayers. The thin films were deposited through RF magnetron sputtering with a 4-inch target (Ni and Ti) on the glass substrates, and the growth times of the deposition were 5, 10, and 30 min. Then, a microwave plasma-enhanced chemical vapor deposition (PECVD) system was used to grow CNWs on the interlayer-coated glass substrates by using a mixture of H2 and CH4 gases. The FE-SEM analysis of the cross-sectional and planar images confirmed that the thickness of interlayers linearly increased according to the deposition time. Furthermore, CNWs grown on the Ni interlayer were taller and denser than those grown on the Ti interlayer. Hall measurement applied to measure sheet resistance and conductivity confirmed that the electrical efficiency improved significantly as the Ni or Ti interlayers were used. Additionally, UV-Vis spectroscopy was also used to analyze the variations in light transmittance; CNWs synthesized on Ni-coated glass have lower average transmittance than those synthesized on Ti-coated glass. Based on this experiment, it was found that the direct growth of CNW was possible on the metal layer and the CNWs synthesized on Ni interlayers showed outstanding structural and electrical characterizations than the remaining interlayer type.

Effect of Heating Rate on the Photocatalytic Activity of Ag–TiO2 Nanocomposites by One-Step Process via Aerosol Routes

Ag–TiO2 nanocomposite films, based of Ag and TiO2 nanoparticles, were fabricated in a one-step aerosol route employing the simultaneous plasma-enhanced chemical vapor deposition and physical vapor deposition systems. The as-fabricated films were subjected to different heating rates (3 to 60 °C/min) with a constant annealing temperature of 600 °C to observe the significant changes in the properties (e.g., nanoparticle size, crystalline size, crystallite phase, surface area) toward the photocatalytic performance. The photocatalytic activity was evaluated by the measurement of the degradation of a methylene blue aqueous solution under UV light irradiation, and the results revealed that it gradually increased with the increase in the heating rate, caused by the increased Brunauer–Emmett–Teller (BET) specific surface area and total pore volume.

High Performance of IZO Coated on PET Substrate for Electroluminescence Device Using Oxygen Plasma Treatment

Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity ( 2.83 × 10 − 3 Ω · cm ), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration ( 4.93 × 10 21 c m − 3 ) and hall mobility (42.12 cm2/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m2 and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.

Plasmonic Carbonaceous Nanotemplates for Microplastics Raman Detection

Plasmonic Carbonaceous Nanotemplates for Microplastics Raman Detection