Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors

Abstract

Recently, amorphous gallium oxide (a-Ga2O3) thin films are gaining more and more attention due to their advantages of low cost and low temperature growth. However, a-Ga2O3 solar-blind ultraviolet photodetectors are plagued by issues such as slow response speed and high dark current. In this work, radio frequency magnetron sputtering was used for a-Ga2O3 deposition, and a novel approach of plasma treatment (including oxygen, argon and hydrogen plasmas) was employed to tailor the device performance using a plasma-enhanced chemical vapor deposition system. It is demonstrated that: (i) the oxygen atoms and ions in the oxygen plasma effectively reduce the oxygen vacancy concentration and improve the respond speed of a-Ga2O3 photodetectors; (ii) the argon ions in the argon plasma create additional defects (such as dangling bonds and oxygen vacancies) and improve the responsivity of a-Ga2O3 photodetectors; (iii) the hydrogen atoms in the hydrogen plasma may incorporate into the film and form an ultra-thin passivation layer near the surface, which gives rise to a balance between responsivity and response speed. Finally, through the detailed analysis of the optical emission spectra and photoelectric performance, the underlying physical mechanism based on the energy band diagram has been proposed to interpret the obtained experimental results.