Abstract
Gallium oxide thin films were deposited by radio frequency magnetron sputtering technique. Structural, optical and photoelectrical properties of Ga2O3 thin films were investigated in detail. The as-grown Ga2O3 thin films were amorphous, while those annealed film were polycrystalline with monoclinic structure. Amorphous and polycrystalline gallium oxide metal-semiconductor-metal photodetectors were fabricated. However, annealed polycrystalline films have no photoresponse for deep ultraviolet light. The responsivity of the photodetector based on as-grown amorphous film is 122.7 μA/W at 256 nm and the ultraviolet (UV)-to-visible rejection ratios were 100, which indicates that the amorphous Ga2O3 thin films have potential application for solar-blind photodetector. High concentration of oxygen vacancies of amorphous film are considered to be responsible for photoresponse in amorphous gallium oxide thin films.
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