Effects of Diethoxymethylsilane/Helium Flow Rate Ratio on Low-k Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

Abstract

As the semiconductor industry has continuously reduced the integrated circuit (IC) chip size, a resistance-capacitance (RC) delay emerged, causing deterioration of the chip performance. To reduce the RC delay, low dielectric constant (low-k) films with suitable mechanical strengths have been adopted as intermetal dielectrics (IMDs). In this study, low-k plasma-polymerized diethoxymethylsilane (ppDEMS) films were fabricated by plasma-enhanced chemical vapor deposition of the DEMS precursor with a flow rate ratio of the DEMS precursor to helium (He) carrier gas (DEMS/He FRR) as a key parameter. As the DEMS/He FRR increased, the refractive index was reduced from 1.401 to 1.386, and the k value decreased from 2.77 to 2.10. From high-resolution scans of C1s, O1s, and Si2p peaks of X-ray photoelectron spectroscopy, the carbon contents increased, and the oxygen contents decreased, along with a decrease in the film density. With the increased DEMS/He FRR, hardness decreased from 2.5 to 1.8 GPa, and elastic modulus decreased from 17.08 to 11.50 GPa. Leakage current densities for all the ppDEMS films were less than 10−7 A cm−2 at 1 MV cm−1. The ppDEMS films could be suggested as the IMDs according to their electrical and mechanical performance.