Photoconductivity Measurements Research Articles

Enhancing the X-ray Sensitivity of Cs2AgBiBr6 Double Perovskite Single Crystals through Cation Engineering.

Owing to their outstanding optoelectronic properties, halide perovskite (HP) materials have been employed in a wide range of applications, including solar cells, light-emitting devices, and X-ray detectors. Among them, lead-free double HPs are characterized by enhanced stability and reduced toxicity compared with lead-based alternatives. Cs2AgBiBr6, in particular, has emerged as a promising candidate for direct X-ray detection. The detection sensitivity, on the other hand, cannot yet compete with that of lead-containing perovskites. Developing schemes to improve X-ray detection efficiency is critical for reducing radiation exposure in medical imaging applications. Here, we investigate the potential of controlled doping and cation substitution with either lanthanides or small organic cations to improve the X-ray detection performance of Cs2AgBiBr6. Our findings reveal that by growing the perovskite in a slightly Bi-poor and Eu-rich environment, the X-ray sensitivity significantly increases 7-fold (from 17 to 120 μC Gyair -1 cm-2) and simultaneously improves the phototo-dark current ratio (from 2.5 to 29). Additionally, Cs-site substitution with imidazolium remarkably enhances the sensitivity over 10-fold (180 μC Gyair -1 cm-2), and ammonium enhances the phototo-dark current ratio to 37. Terahertz photoconductivity measurements reveal a positive correlation between enhanced X-ray sensitivity and improved charge transport properties (e.g., increased scattering time and, thus, carrier mobility) by doping. This study outlines straightforward strategies for boosting X-ray detection and fundamental photoconductivity in lead-free double HP, with potential implications for broader optoelectronic applications.

Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films

This work presents the investigation of the photoconductivity effect in undoped and doped Pb0.5Sn0.5Te epitaxial films, with bismuth (Bi) atoms, at temperatures of 80 and 300 K. The results indicate that the samples show negative photoconductivity effect (NPC) and persistent photoconductivity (PPC). A detailed study was performed on Pb0.5Sn0.5Te sample doped with 0.15 % Bi, which presented higher photoconductivity amplitude than the other samples, by performing Hall effect and photoconductivity measurements in the temperature range of 80–300 K under dark and illuminated conditions. Using Arrhenius model, trap activation energy was extracted and compared with energies found in literature. From the Hall measurement we found that the NPC effect observed is due to a decrease in the mobility when the sample is illuminated while the carrier concentrations are nearly unaltered. It was also found that Pb0.5Sn0.5Te:Bi presented photoconductivity response for a wide range of wavelengths, indicating that it is potentially interesting for application in optic sensor devices.

Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor

We have studied the variations in the temperature-dependent absorption edge of a bulk InSe-layered semiconductor using photoconductivity (PC) measurements. From both the X-ray diffraction (XRD) and Raman experimental results, the structural phase of the as-prepared InSe sample was confirmed to be γ-polytype. Upon heating from 15 K to 300 K, the absorption edge of PC spectra was found to shift significantly toward lower energy, and the absorption edge as a function of temperature was further analyzed by the Varshni’s relationship and Bose–Einstein empirical equation. The Urbach energy as a function of temperature was obtained by fitting the absorption tail below the absorption coefficient of the PC spectrum, and the effective phonon energy can be derived from the temperature-dependent steepness parameter associated with Urbach energy. Our study indicates that the broadening of the absorption edge in the as-synthesized bulk γ-InSe is caused by a combination of electron/exciton–phonon interactions and thermal/structural disorder.

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on the electrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p-Si devices were produced by coating both materials between the semiconductor and the metal using the radio frequency (RF) sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by x-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current–voltage and transient photocurrent measurements were performed and analyzed under different light intensities. While the ideality factor (barrier height) values of the devices produced using CoFe and CoFeNi materials were found to be 11.45 (0.487 eV) and 9.86 (0.513 eV), respectively, in the dark, they were obtained as 13.29 (0.446 eV) and 11.02 (0.484 eV) under 100 mW cm−2 illumination. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current–voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. The results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

Detection of Dirac fermions in capped SnTe film via magnetotransport measurements

In this work, we present the investigation of the magnetotransport properties of a capped SnTe film, grown by molecular beam epitaxy, using Shubnikov–de Haas oscillations for the detection of Dirac fermions. The cap layer used was a 10 nm thick Sn0.98Eu0.02Te film, which can also contribute to the transport such that it is mandatory to isolate its contribution from the electrical transport measured in the sample. To separate the contribution from both layers, photoconductivity measurements were performed. A detailed analysis of the Shubnikov–de Haas oscillations is carried out using theoretical expressions and building the Landau-level indexation. We found that Dirac fermions are detected in the SnTe layer, while the cap layer contributes with trivial fermions, protecting SnTe against deterioration due to exposure to the atmosphere.

Highly intrinsic carrier mobility in tin diselenide crystal accessed with ultrafast terahertz spectroscopy

Tin diselenide (SnSe2), a layered transition metal dichalcogenide (TMDC), stands out among other TMDCs for its extraordinary photoactive ability and low thermal conductivity. Consequently, it has stimulated many influential researches on photodetectors, ultrafast pulse shaping, thermoelectric devices, etc. However, the carrier mobility in SnSe2, as determined experimentally, remains limited to tens of cm2V-1s-1. This limitation poses a challenge for achieving high-performance SnSe2-based devices. Theoretical calculations, on the other hand, predict that the carrier mobility in SnSe2 can reach hundreds of cm2V-1s-1, approximately one order of magnitude higher than experimental value. Interestingly, the carrier mobility could be underestimated significantly in long-range transportation measurements due to the presence of defects and boundary scattering effects. To address this discrepancy, we employ optic pump terahertz probe spectroscopy to access the photoinduced dynamical THz photoconductivity of SnSe2. Our findings reveal that the intrinsic carrier mobility in conventional SnSe2 single crystal is remarkably high, reaching 353.2 ± 37.7 cm2V-1s-1, consistent with the theoretical prediction. Additionally, dynamical THz photoconductivity measurements reveal that the SnSe2 crystal containing rich defects efficiently capture photoinduced conduction-band electrons and valence-band holes with time constants of ∼20 and ∼200 ps, respectively. Meanwhile, we observe an impulsively stimulated Raman scattering at 0.60 THz. Our study not only demonstrates ultrafast THz spectroscopy as a reliable method for determining intrinsic carrier mobility and detection of low frequency coherent Raman mode in materials but also provides valuable reference for the future application of high-performance SnSe2-based devices.

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys

We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035.

Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals

TiO2 and SrTiO3 are stable and efficient materials for photoelectrochemical (PEC) water splitting. PEC activity is influenced by carrier recombination in crystals of these materials. In this study, we analyzed the effect of dislocations on carrier recombination in TiO2 and SrTiO3 using microwave photoconductive decay measurements on polished and unpolished faces. The apparent slow decay in the unpolished face implies that dislocations trap minority carriers. Based on the different dependences of the injected photon density and temperature, the recombination processes in the polished and unpolished faces differ. A high concentration of oxygen vacancies or hydroxyl in the unpolished face of SrTiO3 was observed by x-ray photoelectron spectroscopy, and dislocations in the unpolished faces of both materials were observed using transmission electron microscopy. Additionally, we found that the photocurrent duration in the unpolished faces was shorter than that in the polished faces for both TiO2 and SrTiO3, confirming that dislocations inhibited photoelectrochemical activity.

Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy

Simultaneous measurements of trPL and microwave photoconductivity facilitate a global fit of charge carrier density in perovskite materials. This enables the extraction of fundamental rate constants and the mobility ratio of electrons and holes.

Investigation on the growth aspects and properties of rubidium hydrogen succinate hydrate single crystal for NLO applications.

A novel semiorganic nonlinear optical single crystal of rubidium hydrogen succinate hydrate (RbHSH) was grown at room temperature using the slow evaporation solution growth technique (SEST) with water as a solvent for nonlinear optical applications. The grown crystal is a triclinic system with a centrosymmetric space group of P1̄ and the compound is stabilized by intramolecular O-H-O and C-H-O bonding. FTIR spectral studies were used to determine the various functional groups present in the material. The optical transmission spectra of the grown crystal demonstrated that a transparency of 89%, with a low cut off wavelength of 240 nm and an energy band gap of 5.21 eV, which is beneficial to developing advanced photonic and optoelectronic devices in the solar blind UV area. The grown crystal is thermally stable upto 174 °C. The electrical properties of RbHSH crystal exhibit low dielectric loss and a low dielectric constant at high frequencies tends to have good optical characteristics. Mechanical analysis demonstrated that the grown crystal shows the normal indentation size effect (ISE) and falls into the hard material category with n = 1.4. Photoconductivity measurements revealed negative photoconductivity. Photoluminescence studies showed that RbHSH emits blue light with a wavelength of 484 nm. Hirshfeld surface analysis was used to analyze intermolecular interactions in the RbHSH crystal. The grown RbHSH crystal piezoelectric charge coefficient have been calculated (d33 = 13 pC N-1) and it is suitable for piezoelectric device applications. Under continuous-wave laser excitation, the third order nonlinear refractive index (n2), absorption coefficient (β), and susceptibility (χ(3)) of the RbHSH crystal were found to be 1.6639 × 10-12 (cm2 W-1), 1.1739 × 10-5 (cm W-1) and 4.86331 × 10-9 esu, respectively.

Temperature‐Dependent Interplay between Structural and Charge Carrier Dynamics in CsMAFA‐Based Perovskites

AbstractState‐of‐the‐art triple cation, mixed halide perovskites are extensively studied in perovskite solar cells, showing very promising performance and stability. However, an in‐depth fundamental understanding of how the phase behavior in Cs0.05FA0.85MA0.10Pb(I0.97Br0.03)3 (CsMAFA) affects the optoelectronic properties is still lacking. The refined unit cell parameters a and c in combination with the thermal expansion coefficients derived from X‐ray diffraction patterns reveal that CsMAFA undergoes an α–β phase transition at ≈280 K and another transition to the γ‐phase at ≈180 K. From the analyses of the electrodeless microwave photoconductivity measurements it is shown that shallow traps only in the γ‐phase negatively affect the charge carrier dynamics. Most importantly, CsMAFA exhibits the lowest amount of microstrain in the β‐phase at around 240 K, corresponding to the lowest amount of trap density, which translates into the longest charge carrier diffusion length for electrons and holes. Below 200 K a considerable increase in deep trap states is found most likely related to the temperature‐induced compressive microstrain leading to a huge imbalance in charge carrier diffusion lengths between electrons and holes. This work provides valuable insight into how temperature‐dependent changes in structure affect the charge carrier dynamics in FA‐rich perovskites.

In‐gap States and Carrier Recombination in Quasi‐2D Perovskite Films

In‐gap states and their effect on recombination rates in quasi‐2D lead–iodide‐based perovskites, intercalated with various spacer molecules, are studied using a combination of scanning tunneling spectroscopy and temperature‐dependent photoconductivity measurements. The results are further analyzed by a Shockley–Read–Hall model. Indications for shallow in‐gap states, positioned at about 0.15–0.2 eV below the bottom of the conduction band, are found. These states are identified as dominating the recombination route of photogenerated carriers in these systems, with a relatively large capture coefficient of about 10−5–10−6 cm3 s−1 at room temperature. First‐principles calculations based on density functional theory imply that these states are not an intrinsic effect of the inclusion of the spacer molecules, but rather one that arises from chemical defect formation or structural deformation of the perovskite layers. The results suggest that further improvement of the performance of solar cells that are based on quasi‐2D perovskites requires, along with enhancing carrier mobility, efforts to suppress the concentration of these detrimental defect states.

Intrinsic Photoconductivity Spectral Dependence as a Tool for Prediction of Open-Circuit Voltage in Organic Solar Cells

Organic materials are known for their variety of molecules. Methods to predict the parameters of organic photovoltaic (OPV) cells are required to avoid the time- and resource-consuming processes of manufacturing and testing OPVs. Usually, the open-circuit voltage (Uoc) is estimated as the difference between the ionization energy level of the electron donor molecule (Id) and the electron affinity level of the electron acceptor molecule (EAa). Various measurement methods are used to determine the energy level values of pure materials, which, when combined with energy level shifts due to the donor:acceptor interactions, make these estimations less precise. In this work, photoconductivity measurements were applied to the donor:acceptor films. Near threshold energy, the electron can be directly transferred from the donor to the acceptor molecule. The obtained charge transfer energy (ECT) shows the difference between Id and EAa in the film. This difference was compared to the Uoc value of an OPV made of the same donor:acceptor combination. We show that this approach provides less scattered results and a higher correlation coefficient compared to the Uoc estimation using energy level values.

Transiently delocalized states enhance hole mobility in organic molecular semiconductors.

Evidence shows that charge carriers in organic semiconductors self-localize because of dynamic disorder. Nevertheless, some organic semiconductors feature reduced mobility at increasing temperature, a hallmark for delocalized band transport. Here we present the temperature-dependent mobility in two record-mobility organic semiconductors: dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene (DNTT) and its alkylated derivative, C8-DNTT-C8. By combining terahertz photoconductivity measurements with atomistic non-adiabatic molecular dynamics simulations, we show that while both crystals display a power-law decrease of the mobility (μ) with temperature (T) following μ ∝ T -n, the exponent n differs substantially. Modelling reveals that the differences between the two chemically similar semiconductors can be traced to the delocalization of the different states that are thermally accessible by charge carriers, which in turn depends on their specific electronic band structure. The emerging picture is that of holes surfing on a dynamic manifold of vibrationally dressed extended states with a temperature-dependent mobility that provides a sensitive fingerprint for the underlying density of states.

Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation.

By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.

High-Efficiency Photoinduced Charge Separation in Fe(III)carbene Thin Films.

Symmetry-breaking charge separation in molecular materials has attracted increasing attention for optoelectronics based on single-material active layers. To this end, Fe(III) complexes with particularly electron-donating N-heterocyclic carbene ligands offer interesting properties with a 2LMCT excited state capable of oxidizing or reducing the complex in its ground state. In this Communication, we show that the corresponding symmetry-breaking charge separation occurs in amorphous films of pristine [Fe(III)L2]PF6 (L = [phenyl(tris(3-methylimidazol-2-ylidene))borate]-). Excitation of the solid material with visible light leads to ultrafast electron transfer quenching of the 2LMCT excited state, generating Fe(II) and Fe(IV) products with high efficiency. Sub-picosecond charge separation followed by recombination in about 1 ns could be monitored by transient absorption spectroscopy. Photoconductivity measurements of films deposited on microelectrode arrays demonstrated that photogenerated charge carriers can be collected at external contacts.

Bias-voltage photoconductance and photoluminescence for the determination of silicon-dielectric interface properties in SiO2/Al2O3 stacks

This paper presents an advanced measurement method for controlling the surface charge carrier density of passivated silicon wafers during photoconductance and photoluminescence measurements, by employing semitransparent poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) electrodes with an applied bias voltage. This is employed to study and analyze charge carrier dynamics in dielectric layers by measuring their direct influence on effective lifetime. With this method, the carrier population at the surface and the effective carrier lifetimes of n- and p-type samples can be investigated, from which the fixed charge carrier density Qf of the passivation can be extracted. Additionally, the defect density Dit can also be derived from the minimum lifetime values at flatband voltage. In SiO2/Al2O3 stacks with varying SiO2 interlayer thickness, it was shown that by changing the SiO2 thickness, the carrier density Qf can be tuned to a wide range of values, which corresponds to the results obtained in other studies. An increase in interlayer thickness resulted in a decrease in Qf. Varying the SiO2 thickness, the behavior of the respective effective lifetime under bias voltage also changes, exhibiting hysteresis-like effects, which are attributed to additional charges getting trapped at the surface during bias-voltage application. This effect is much more pronounced for samples with a thinner SiO2 layer as well as for the n-type samples. Additionally, the doping type also influences the magnitude of Qf, with p-type samples generally reaching lower absolute values. It was also shown that aging of the samples had a significant effect on the measured Qf, which was increased compared to the initial Qf of the passivation. This effect was more pronounced for the n-type samples. The measurements were realized by a cost-effective and easy-to-use microcontroller-based potentiostat, which can be used as a simple add-on to existing photoconductance or photoluminescence measurement setups.

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS2 Field-Effect Transistors at Low Temperatures.

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS2 FETs, synthesized using the mechanical exfoliation of bulk MoS2 crystal, on the Si/SiO2 substrate. Our MoS2 FET show a room-temperature field-effect mobility μFE ~40 cm2·V-1·s-1, which increases with decreasing temperature, stabilizing at 80 cm2·V-1·s-1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, Peff (0.02 μW < Peff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW-1, and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

Microstructural, electrical, and optoelectronic properties of BaSi2 epitaxial films grown on Si substrates by close-spaced evaporation

BaSi2, an earth-abundant photovoltaic material with a limiting efficiency of 32 %, has the interesting property that grain boundaries do not significantly degrade the film properties. In this study, we investigated the microstructure and its effect on the electrical and optoelectronic properties of the BaSi2 films grown by close-spaced evaporation. Microstructural analysis confirmed the (100)-oriented epitaxial growth on both Si(100) and Si(111) substrates. In addition to conventional epitaxial relationships, lattice matching with the BaSi2(01¯3) plane parallel to Si(110) was observed on Si(100) substrates. The density of the epitaxial domain boundary was found to decrease with increasing film thickness, increasing growth temperature, and using Si(100) substrates instead of Si(111). Hall effect measurements revealed the conductivity type transition at a temperature between 900 and 1000 ∘C and a decreasing tendency of carrier density with film thickness. There was no obvious correlation between mobility and grain boundary density, consistent with previous reports. Carrier recombination kinetics were evaluated by the microwave-detected photoconductivity decay method and the photoconductivity measurement under constant optical irradiation. Both analyses revealed weak negative correlations between excess carrier lifetime and grain boundary density, which clarified the superiority of large-grained BaSi2 films for photovoltaic applications.

Atmosphere-Dependent Electron Relaxation of the Ag-Decorated TiO2 and the Relations with Photocatalytic Properties

In the current research, the atmosphere effects on the photoinduced electron relaxations of the undecorated TiO2 and Ag-decorated TiO2 (Ag/TiO2) were carefully studied by means of the in situ photoconductance and diffuse reflection measurements. In pure N2 atmosphere, the results showed that the electron relaxation mainly occurs through the transfer to the residual O2, and the Ag nanoparticles form a fast electron transfer pathway. It was seen that the apparent activation energy of the electron transfer to O2 was greatly reduced by the Ag decoration. In the methanol-containing N2 atmosphere, the electron relaxation can still occur via the transfer to residual O2 in the case of the undecorated TiO2, while the relaxation mechanism changes for the Ag/TiO2 as the relaxations are decreased with the temperatures. It is possible that the methanol molecule adsorbed on the Ag/TiO2 perimeters could act as the bridge for the recombination of the holes and the electrons stored in the Ag nanoparticles. Reducing the Ag nanoparticle size from 15 nm to 3 nm can greatly increase the electron relaxations due to the increase in Ag dispersion and Ag/TiO2 interconnection. Although the electron transfer to O2 was increased, both the photocatalytic oxidations of acetone and isopropanol showed a decrease after the Ag decoration. The results indicated that the photocatalytic oxidation was not limited by the electron transfer to O2. The increased electron transfer to O2 contributed to the recombination around the Ag/TiO2 perimeters, and the photocatalytic activities were decreased.