Photoconductivity Measurements Research Articles

Sankaranarayanan-Ramasamy (SR) technique L- threonine lithium chloride single crystal: Unidirectional growth, optical and mechanical studies

L-Threonine Lithium Chloride (LTLC), an effective semi-organic NLO material, was successfully produced as a bulk single crystal using the Sankaranarayanan Ramasamy (SR) process. According to a study of a single crystal's X-ray diffraction, LTLC crystallises in an orthorhombic system with space group P212121. From the powder XRD method, unidirectional development along the plane (110) was established. The optical absorption spectra reveals that LTLC has a broad bandgap of 3.75 eV and is very transparent over the whole visible region. On the magnified crystal, photoconductivity measurements show positive photoconductivity. According to the photoluminescence investigation, LTLC emits green light with a wavelength of 535 nm. Vickers microhardness testing was done to determine the crystal's mechanical strength. At different temperatures and frequencies, the dielectric constant and dielectric loss were calculated. In addition to the density functional theory (DFT) calculations such as frontier molecular orbital’s (FMOs), analysis was carried out. Utilizing Kurtz's Nd:YAG Laser, powder testing is another method used to assess the produced crystal's SHG activity.

First-principles calculations integrated with experimental optical and electronic properties for MoS2-graphene heterostructures and MoS2-graphene-Au heterointerfaces

We present a computational and experimental study for various heterostructures and heterointerfaces comprising two-dimensional (2D) molybdenum disulfide (MoS2) and graphene (Gr) supported on gold (Au). These structures are useful for photo-electrochemical and nanophotonic applications, as well as for hydrogen generation. The frequency-dependent dielectric function, the refractive index, and the reflectivity are calculated using light polarization parallel and perpendicular to the respective monolayer c axis. We identify the transitions within MoS2 and graphene, which correspond to peaks in the imaginary part of the frequency-dependent dielectric function. The Gr-MoS2 dielectric function appears as a composition of the corresponding dielectric functions from the isolated monolayers with their peaks being shifted. However, for the Gr-MoS2-Au heterointerfaces, some of these peaks from the isolated monolayers are no longer detected. Charge transfers and work function calculations show that MoS2 and graphene are n and p-type semiconductors, respectively, which agree with our experimental local photoconductivity measurements. The heterojunction behavior for Gr-MoS2 is attributed to the interlayer electronic coupling, while minimizing Fermi level pinning at the MoS2/Au interface and charge transfers from graphene to MoS2. Thus, interfacing MoS2 with graphene signifies substrate engineering, allowing tunable MoS2 physical properties for diverse applications across the electromagnetic spectrum.

Semiconducting Conjugated Coordination Polymer with High Charge Mobility Enabled by "4 + 2" Phenyl Ligands.

Electrically conductive coordination polymers and metal-organic frameworks are attractive emerging electroactive materials for (opto-)electronics. However, developing semiconducting coordination polymers with high charge carrier mobility for devices remains a major challenge, urgently requiring the rational design of ligands and topological networks with desired electronic structures. Herein, we demonstrate a strategy for synthesizing high-mobility semiconducting conjugated coordination polymers (c-CPs) utilizing novel conjugated ligands with D2h symmetry, namely, "4 + 2" phenyl ligands. Compared with the conventional phenyl ligands with C6h symmetry, the reduced symmetry of the "4 + 2" ligands leads to anisotropic coordination in the formation of c-CPs. Consequently, we successfully achieve a single-crystalline three-dimensional (3D) c-CP Cu4DHTTB (DHTTB = 2,5-dihydroxy-1,3,4,6-tetrathiolbenzene), containing orthogonal ribbon-like π-d conjugated chains rather than 2D conjugated layers. DFT calculation suggests that the resulting Cu4DHTTB exhibits a small band gap (∼0.2 eV), strongly dispersive energy bands near the Fermi level with a low electron-hole reduced effective mass (∼0.2m0*). Furthermore, the four-probe method reveals a semiconducting behavior with a decent conductivity of 0.2 S/cm. Thermopower measurement suggests that it is a p-type semiconductor. Ultrafast terahertz photoconductivity measurements confirm Cu4DHTTB's semiconducting nature and demonstrate the Drude-type transport with high charge carrier mobilities up to 88 ± 15 cm2 V-1 s-1, outperforming the conductive 3D coordination polymers reported till date. This molecular design strategy for constructing high-mobility semiconducting c-CPs lays the foundation for achieving high-performance c-CP-based (opto-)electronics.

Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon

In recent years, infrared photodetectors using silicon hyperdoped with deep-level dopants started to demonstrate extended light detection beyond the silicon’s absorption edge. The reported responsivities or external quantum efficiencies, however, are typically low. Focusing on gold-hyperdoped silicon and using time-resolved terahertz spectroscopy, a non-contact photoconductivity measurement, we investigated how hyperdoping parameters affect charge carrier lifetimes. Correlating the observed lifetime characteristics with dopant distribution profiles, we identify factors that impact carrier lifetime most significantly. Specifically, the charge carrier lifetime reduces with increasing gold concentrations, increasing ion implantation energies, and increasing pulsed-laser melting fluences. Both ion implantation energy and laser fluence affect the dopant incorporation depths. The total gold dose implanted and laser fluence affect the carrier distribution profile, particularly the concentration spike toward the surface. Oxide passivation and the number of laser pulses do not impact the carrier lifetime significantly. Our findings benefit future device developments.

Singular Time‐Dependent Photoconductivity Response of MAPbI3 Samples Deposited by Vacuum Processing on Different Substrates

Organo–inorganic halide perovskites continue to generate enormous interest for their potential use in various optoelectronic devices. Among the different fabrication methods, vacuum thermal deposition allows uniform films over large areas, providing good material quality without using organic solvents. However, the influence of the substrate on the properties of the material deposited by vacuum processing is a point that deserves further investigation. Herein, time‐dependent photoconductivity measurements are used to investigate the dynamics of charge carriers under illumination in planar films of CH3NH3PbI3. The samples are deposited by thermal sublimation on different substrates: PbI2, TaTm, C60, and glass. Experimentally, it is shown that the substrate has a profound effect on perovskite behavior and that photoconductivity is sensitive enough to probe these behaviors. Furthermore, a model based on Shockley–Read–Hall statistics is proposed, explaining the different photoconductivity responses by changing only the relative values of the different capture coefficients and the position of the Fermi level. It is argued that the substrate changes the stoichiometry of the evaporated material, affecting the transient photoconductivity response.

Complexation study of a 1,3-phenylene-bridged cyclic hexa-naphthalene with fullerenes C60 and C70 in solution and 1D-alignment of fullerenes in the crystals.

To investigate the host ability of a simple macrocycle, 1,3-phenylene-bridged naphthalene hexamer N6, we evaluated the complexation of N6 with fullerenes in toluene and in the crystals. The complexes in the solid-state demonstrate the one-dimensional alignment of fullerenes. The single-crystals of the C60@N6 composite have semiconductive properties revealed by photoconductivity measurements.

Enhancement of Light Induced Transport Properties in Beetroot Dye-Based Biological Schottky Device Using Titanium Dioxide (TiO2) Nanoparticles

In response to the growing demand for electronics, scientists are actively investigating alternative nonconventional, bio-compatible electronic materials suitable for electronic and optoelectronic device applications. This study focuses on enhancing the photoconductivity and photosensitivity of a beetroot (BR) dye-based Schottky device through the incorporation of Titanium dioxide (TiO2 ) nanoparticles. To achieve this, ITO(Indium tin oxide)/BR/Al (Aluminium) and ITO/BR+TiO2 /Al devices were fabricated through the spin coating technique, and their light-induced charge transport properties were examined. The thin films were also characterized through UV-Vis and FESEM analyses. Initial measurements of photoconductivity, sensitivity, and photoresponsivity of the device yielded unsatisfactory results, indicating the need for improvement to enable effective device applications. To address this, we incorporated Titanium dioxide nanoparticles with the dye by making nano-composite, leading to a remarkable enhancement in photoconductivity, increasing from 2.78×10 -8 S/m to 1.75×10 -7 S/m, and a significant boost in photosensitivity, rising from 1131.03 to 2157.67. Furthermore, we estimated other light transport properties, including diffusion length, transit time, and effective mobility, for a comprehensive analysis of the device's performance. These additional parameters also exhibited notable enhancements in the presence of TiO2 nanoparticles. This research contributes valuable insights into the application of TiO2 nanoparticles in enhancing the performance of organicbased optoelectronic devices, and it offers potential avenues for further exploration and refinement of bio-compatible electronic materials in electronic and optoelectronic applications.

Analysis of current-voltage curves of ZnO thin films under dark and optical stimulus

In this work, we are reporting the current conduction mechanism in ZnO thin films of various thicknesses under the dark and optical stimulus. The ZnO thin films of different thicknesses (45, 70, 110, 160, 220 nm) were grown on a glass substrate at 250 °C using the spray pyrolysis method. For photoconductivity measurements, electrodes were made using silver paste by putting a ∼1 mm gap between the electrodes. The photocurrent under UV illumination increases with increasing film thickness. Linear fitting of the data suggests the major role of space charges in the film for the rise in the photocurrent. Therefore the obtained conduction mechanism is found to be space charge-limited conduction in ZnO thin films under UV illumination.

Temperature-dependent zero-field splittings in graphene

The topological bandgap of graphene induced by intrinsic spin-orbit coupling is so narrow that it was experimentally identified for the first time only in 2019. In this work, the authors use a specific electron spin resonance technique, based on photoconductivity measurements using graphene-based terahertz detectors, to probe zero-field splittings of graphene as a function of temperature. They demonstrate experimentally that the intrinsic spin-orbit coupling and the staggered sublattice potential, which reduces the topological gap, are both temperature dependent.

Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

Within a p-i-n LED structure, energy band gaps of MOCVD grown %10 In content InGaN and GaN layers were obtained through traditional UV–Visible transmission-absorption measurements and utilizing surface photovoltage (SPV) and spectral photoconductivity (SPC) measurements. Moreover, all applied techniques determined that the total band offset between InGaN and GaN layers were around 0.3–0.4 eV. Furthermore, the temperature dependence of band gaps of each InGaN and GaN layer was analyzed through a modified Varshni relation where both Varshni coefficients and band tail energy width were explored. Band tails in a modified Varshni relation, SPV and SPC measurements were in agreement with each other and originated Franz-Keldysh Effect attributed to the presence of photon assisted tunneling.

A Photoconductance Mechanism for Oil Shale Pyrolysis Process Detection

Abstract Kerogen in oil shale plays a crucial part in the shale oil and gas generation. Here, photoconductive measurement was used to evaluate the decomposition process of Huadian oil shale. The photoconductivity of the semi-coke is a clear indicator of different pyrolysis stages, including moisture evaporation, primary pyrolysis of kerogen, decomposition of asphalt monomer, and mineral decomposition. Furthermore, the distribution model of electrical resistance (R) and photoconductance (ΔI) for Huadian oil shale is plotted, indicating an inverse proportion between R and ΔI. We believe that the photoconductive measurement will be a valuable means for the nondestructive characterization of oil shale pyrolysis, which is helpful to optimize the comprehensive utilization of this unconventional resource.

Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory

Optical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionization cross sections are fitted by a phenomenological model considering electron–phonon coupling. The obtained fitting parameters: thermal ionization (zero-phonon transition) energy, Franck–Condon shift, and effective phonon energy are compared with corresponding values predicted by first principle calculations based on density functional theory. A (+/0) donor level ∼0.85 eV above the valence band maximum and a (0/−) acceptor level ∼2.1 eV below the conduction band minimum are consistently derived. Temperature-dependent electrical resistivity measurement at elevated temperatures (up to 1000 K) yields a thermal activation energy of 2.1 ± 0.1 eV, consistent with the position of the Co acceptor level. Furthermore, the results show that Co doping is promising for producing semi-insulating β-Ga2O3 crystals.

(Invited, Digital Presentation) Photoactivated In2O3/GaN NW Sensors for Monitoring NO2 with High Sensitivity and Low Power

We report and discuss our results on the performance of our photoactivated In3O2/GaN NW sensors, for monitoring NO2 at various levels of relative humidity and operating power. A 1ppm sensitivity as high as 29% was demonstrated at operating power of 5 mW and relative humidity 40%.Nanostructure-based semiconductor gas sensors such as nanowires, nanotubes or nanorods have seen significant progress in recent years, owning to their large surface-to-volume ratio proprieties, which lead to considerably increased sensitivity and improve the time response to analyte gases. In particular, Gallium Nitride (GaN) nanostructure-based gas sensors have generated a lot of interest due to its unique combination of sensor “friendly” properties such as, direct bandgap, excellent carrier mobility, high heat capacity and high breakdown voltage. These properties combined with suitable surface engineering make GaN and GaN-based nanostructures an excellent candidate for portable gas sensors.In this work, Gallium Nitride (GaN) nanowire (NW)-based NO2 sensors, functionalized with either pure In2O3 or In2O3 covered with an evaporated Au nanolayer, were developed for low operating power and high sensitivity. An AlGaN buffer layer was first deposited on a Si substrate to minimize lattice mismatch and improve adhesion between the Si substrate and the GaN NWs. Then the GaN NWs were patterned by stepper lithography-assisted dry-etching, followed by Induced Coupled Plasma etching using a metal hard mask to protect the GaN NW. The nanowire width target ranged between 200-600nm. Subsequently, electrodes composed of Ti/Al/Ti/Au metal stacks were deposited on top of the GaN to form Ohmic contacts. A thin In2O3 layer metal oxide receptor was deposited on all devices, using RF magnetron sputtering on top of the exposed GaN NW and this was followed for a subgroup of devices by coating the In2O3 with an evaporated Au nanolayer. Finally, rapid thermal annealing (RTA) at 700 0C was performed to crystalize the receptor layers and improve the ohmic contact. The surface quality of the resulting sensors was inspected with the help of Scanning Electron Microscope (SEM) micrographs.Several devices of each group (In2O3 and In2O3/Au ) were wire bonded and mounted onto an array board chamber. The devices were biased under 5V DC. Photoconductivity measurements, humidity testing and NO2 gas testing (1ppm and 10ppm concentration) were conducted. The sensors were illuminated under constant UV LED illumination throughout the duration of the testing at two wavelengths, 265 nm and 365 nm and three irradiance levels, 5mW, 30mW and 60mW. In general, the In3O2 GaN NW sensors where characterized by low sensitivity levels, whereas the In3O2/Au GaN NW sensors achieved excellent sensitivity levels. Fig.1 shows typical dynamic responses to 1ppm NO2 of the In3O2/Au GaN NW sensors under illumination at 265 nm and 365 nm, respectively, and Fig.2 the response at various relative humidity (RH) levels. An increase in resistance upon exposure to NO2 is observed, confirming the oxidizing nature of the NO2 gas. At this NO2 concentration level, the highest response value (29%) was obtained under (5mW, 265 nm) illumination, whereas the sensitivity under (5mW, 365nm) illumination was lower. For (30mW, 265nm) illumination, the sensitivity was 23% and for (30mW, 365nm) illumination it dropped to 15%. This phenomenon has been observed in the past by other authors also, and although its origins are not yet understood unambiguously, it may be caused by a higher rate of phonon energy relaxation at the surface at higher wavelengths, thereby reducing the effectiveness of chemisorption at the surface. In conclusion, room-temperature low-power photoactivated In3O2/Au GaN NW sensors with excellent levels of sensitivity at elevated relative humidity were designed, fabricated and tested. Figure 1

Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO4 , Halide Perovskites, and Amorphous and Crystalline Silicon

Long diffusion lengths of photoexcited charge carriers are crucial for high power conversion efficiencies of photoelectrochemical and photovoltaic devices. Time-resolved photoconductance measurements are often used to determine diffusion lengths in conventional semiconductors. However, effects such as polaron formation or multiple trapping can lead to time-varying mobilities and lifetimes that are not accounted for in the conventional calculation of the diffusion length. Here, a generalized analysis is presented that is valid for time-dependent mobilities and time-dependent lifetimes. The diffusion length is determined directly from the integral of a photoconductivity transient and can be applied regardless of the nature of carrier relaxation. To demonstrate our approach, photoconductivity transients are measured from 100 fs to 1 µs by the combination of time-resolved terahertz and microwave spectroscopy for BiVO4, one of the most studied metal oxide photoanodes for photoelectrochemical water splitting. The temporal evolution of charge carrier displacement is monitored and converges after about 100 ns to a diffusion length of about 15 nm, which rationalizes the photocurrent loss in the corresponding photoelectrochemical device. The presented method is further validated on a−Si:H, c−Si, and halide perovskite, which underlines its potential to determine the diffusion length in a wide range of semiconductors, including disordered materials.Received 14 April 2022Revised 2 August 2022Accepted 12 August 2022DOI:https://doi.org/10.1103/PRXEnergy.1.023008Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasCarrier generation & recombinationDiffusionElectrical conductivityOptical conductivityPhotoconductivityPhotocurrentPhysical SystemsAmorphous materialsAmorphous semiconductorsComplex materialsEnergy applicationsEnergy materialsThin filmsTechniquesMicrowave techniquesTerahertz spectroscopyCondensed Matter, Materials & Applied Physics

Time-resolved terahertz spectroscopy for probing the effects of low-temperature annealing on CsPbBr3 evaporated thin-films

The fine-tuning of the growth conditions and post-deposition treatments is of fundamental importance to improve the efficiency of photovoltaic devices based on all-inorganic metal halide perovskites like CsPbBr3. In this work, we used time-resolved terahertz spectroscopy (TRTS) in combination with optical characterization techniques, x-ray diffraction (XRD), and scanning electron microscopy, to probe the different properties induced by a low-temperature (180 °C) annealing treatment on evaporated CsPbBr3 thin-films. We observed a faster build-up and relaxation dynamics in the annealed sample, accompanied by a remarkable decrease of the photoluminescence intensity and minor changes in the photoconductivity and XRD measurements as compared to the as-deposited sample. We estimated for both the samples a mobility of cm2 V−1 s−1. Our results suggest that the lattice reorganization induced by low-temperature annealing of evaporated CsPbBr3 could lead to a different charge carrier-phonon coupling and to an increased contribution of non-radiative recombination channels. We found that TRTS can be effectively used to follow the changes induced by post-deposition thermal annealing of CsPbBr3.

Solution-processed CaMnO3−δ -based all oxide solar cells with high open-circuit voltage

Finding a low-cost, stable solar absorber with suitable optical properties is one of the key aspects in promoting solar cell research. Perovskite-structured ${\mathrm{CaMnO}}_{3}$, composed of earth-abundant elements, is an environmentally friendly multifunctional material especially featuring thermoelectricity and G-type antiferromagnetism. In this paper, we explore the potential of $\mathrm{CaMn}{\mathrm{O}}_{3\text{\ensuremath{-}}\ensuremath{\delta}}$(CMO) as an absorber layer in all oxide solar cells. Solution-processed CMO shows strong light absorption capacity in the wavelength range of 400--750 nm with the estimated optical bandgap of 1.77 eV. First-principles calculations show $d\text{\ensuremath{-}}d$ transitions within the upper Mott-Hubbard bands, and lower Mott-Hubbard bands constitute the electronic bandgap, whereas the $p\text{\ensuremath{-}}d$ transitions between the O $2p$ and Mn $3d$ bands contribute to the optical absorption in the visible region. Furthermore, a gradual increase in the current value was observed under illumination in the photoconductivity measurement. We have designed a CMO absorber-layer-based all oxide solar cell using a conventional mesostructured ${\mathrm{TiO}}_{2}$ photo-anode and NiO hole transport layer (HTL). The suitable band alignment of the CMO absorber with both ${\mathrm{TiO}}_{2}$ and NiO enables us to achieve an average open-circuit voltage $({V}_{\mathrm{OC}})$ of 0.92 V with the maximum value of 1.03 V, which is among the highest reported values so far for oxide-based solar cells. Solar cell parameters were also validated using simulations. Our results add a direction in the search for low-cost, stable solar absorber materials.

Ultralong Charge Carrier Recombination Time in Methylammonium Lead Halide Perovskites

Due to their exceptional photovoltaic properties, metal halide perovskites (MHPs) are extensively studied for their potential applications in solar cells. In recent years, the power conversion efficiencies of MHPs-based solar cells rapidly increased from the initial few \% towards more than 25\,\% for single-junction devices. Therefore, also taking into account their low costs and ease of manufacturing, MHPs-based solar cells have become the fastest-advancing photovoltaic technology. In this regard, much of the recent work has been dominated by absorber materials based on methylammonium MHPs, such as MAPbX$_3$, where MA=CH$_3$NH$_3$ and X=Cl, Br and I. Here, we present the results of contactless time-resolved photoconductivity measurements in an exceptionally wide range of temperatures of $4$ to $290\ \text{K}$ that were performed for the various crystalline forms of the three parent MAPbX$_3$, i.e., MAPbCl$_3$, MAPbBr$_3$ and MAPbI$_3$. This approach was made possible by the use of a high quality-factor (Q) microwave resonator, which cooperated with a commercially available microwave bridge equipped with an automatic frequency control (AFC) and a helium gas-flow cryostat.

Long-range charge carrier mobility in metal halide perovskite thin-films and single crystals via transient photo-conductivity

Charge carrier mobility is a fundamental property of semiconductor materials that governs many electronic device characteristics. For metal halide perovskites, a wide range of charge carrier mobilities have been reported using different techniques. Mobilities are often estimated via transient methods assuming an initial charge carrier population after pulsed photoexcitation and measurement of photoconductivity via non-contact or contact techniques. For nanosecond to millisecond transient methods, early-time recombination and exciton-to-free-carrier ratio hinder accurate determination of free-carrier population after photoexcitation. By considering both effects, we estimate long-range charge carrier mobilities over a wide range of photoexcitation densities via transient photoconductivity measurements. We determine long-range mobilities for FA0.83Cs0.17Pb(I0.9Br0.1)3, (FA0.83MA0.17)0.95Cs0.05Pb(I0.9Br0.1)3 and CH3NH3PbI3-xClx polycrystalline films in the range of 0.3 to 6.7 cm2 V−1 s−1. We demonstrate how our data-processing technique can also reveal more precise mobility estimates from non-contact time-resolved microwave conductivity measurements. Importantly, our results indicate that the processing of polycrystalline films significantly affects their long-range mobility.

Photoconductivity on K-feldspar

In the development of most phenomenological models used to explain the infrared excited luminescence, a major assumption is usually made in the degree of freedom the excited charge has. One of the two extremes is normally assumed: charge is free to move anywhere over the whole crystal, or it is confined close to the trap and the centers immediately adjacent to it. Determining which of these extremes is more reasonable is difficult to do on the basis of the temporal behavior of the luminescence intensity alone. However, this assumption has important consequences for the understanding of the dynamics of the luminescence process because of the difference in the number of recombination and trapping centers available to the excited charge. Additional experimental evidence was thus sought on this aspect of charge movement. One such experiment is the detection of photoconductivity in which an electrical current is measured during optical excitation or shortly there-after. In this paper, the details of photoconductivity experiments on K crystal are presented. Photoconductivity measurements were inconclusive as to whether or not there was a current flowing during the 850 nm excitation of a feldspar sample. However, there was a clear current when exciting the same sample with 515 nm light, but there was a complex relationship between the magnitude of the current and the number of emission photons counted. A model was developed to explain the photoconductivity results where electrons migrate through the conduction band aided by thermal excitation and tunneling.

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells (QWs) is investigated. Three sets of high-mobility InGaAs QW structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the QW, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in QW by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.