Abstract
Single-crystal chemical vapour deposition (CVD) diamond samples with asymmetric Schottky contacts were used for the fabrication of vertical metal-semiconductor-metal detectors for deep ultraviolet (UV–C) radiation. Spectral photoconductivity measurements, performed in the 190 ÷ 1100 nm wavelength range, returned an ultraviolet-to-visible (UV/Vis) rejection ratio of 6.8 × 103 under photovoltaic operating conditions, ensuring solar blindness and zero power consumption at the same time. When applying bias, UV/Vis rejection ratio reached excellent values (>104) even at very low electric fields (0.01 V/μm), thanks to the excellent structural quality and the superior charge transport properties of the diamond bulk, as inferred from Raman analysis and spectral photoconductivity measurements. Mobility-lifetime (μτ) product of the photogenerated carriers was indeed measured to be about 5 × 10−3 cm2/V in the case of holes, which is the highest room-temperature μτ value ever reported for CVD diamond, enabling a response speed in the nanosecond range even at zero-bias operating conditions.
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