Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films

Abstract

This work presents the investigation of the photoconductivity effect in undoped and doped Pb0.5Sn0.5Te epitaxial films, with bismuth (Bi) atoms, at temperatures of 80 and 300 K. The results indicate that the samples show negative photoconductivity effect (NPC) and persistent photoconductivity (PPC). A detailed study was performed on Pb0.5Sn0.5Te sample doped with 0.15 % Bi, which presented higher photoconductivity amplitude than the other samples, by performing Hall effect and photoconductivity measurements in the temperature range of 80–300 K under dark and illuminated conditions. Using Arrhenius model, trap activation energy was extracted and compared with energies found in literature. From the Hall measurement we found that the NPC effect observed is due to a decrease in the mobility when the sample is illuminated while the carrier concentrations are nearly unaltered. It was also found that Pb0.5Sn0.5Te:Bi presented photoconductivity response for a wide range of wavelengths, indicating that it is potentially interesting for application in optic sensor devices.