Photodetectors Research Articles

Self-powered Schottky barrier photodetectors based on P3HT:PC61BM bulk heterojunction films

By employing the classic system poly(3-hexylthiophene-2,5-diyl): [6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PC61BM), organic bulk heterojunction films were applied on an indium tin oxide substrate using a one-step spin-coating method, without requiring any complex manufacturing processes, to obtain self-powered photodetectors (PDs) with a simple preparation process. The fullerene material was introduced to create a bulk heterojunction film with proper phase separation and greatly enrich the donor/acceptor dissociation interface, thus improving the high exciton binding energy and short exciton diffusion distance. The built-in electric field formed by the Schottky junction at the interface between the active layer and electrode can enhance the separation of excitons and the transport of charge carriers, realizing optical detection without external energy sources. Moreover, femtosecond transient absorption was employed to investigate the exciton dynamics in organic films and analyze the working mechanism of self-powered detection performance. The long-lived behavior of carriers and the formation of charge transfer states were further verified, which contributed to the enhanced performance of the device. As a result, the self-powered PD-based Schottky bulk heterojunction presents a high light on/off ratio of over 104 (0 V) and fast response speed with rise and decay times of 33 and 36 µs, respectively, under a 532 nm light illumination. These results provide theoretical and experimental verification of this technique for the development of self-powered PDs in the field of organic materials.

Investigation of spin polarized semiconductor Cs2XMoBr6 (X = Li, Na) compounds for spintronic and optoelectronic applications

This study has applied the density functional theory (DFT) to calculate the structural, magnetoelectronic, optical, and thermoelectric characteristics of Cs2XMoBr6 (X = Li, Na). The magnetic stability of studied compounds is examined by minimizing their total ground state energies. Also, both compounds exhibit cubic stability by tolerance factor as well as negative enthalpy of formation. The analysis of spin-dependent electronic properties reveals the semiconductor nature of mentioned materials in both spin-up/dn versions. The computed Eg of 0.90/1.99 eV in spin-up/dn sections for Cs2NaMoBr6 while Cs2LiMoBr6 reveals Eg of 1.99/1.21 eV in spin-up/dn version. The optical properties show that incident light is optimally absorbed in visible to ultraviolet areas, indicating their potential use in UV-based photo sensors and other photovoltaic gadgets. The Mo-atom primarily participate to the total magnetic moment (μB(Tot)) for Cs2XMoBr6. Further, the material's high figure of merit (ZT) >0.7 within the 300 - 800 K temperature range for Cs2XMoBr6 indicate its high efficiency in thermoelectric (TE) applications. Semiconducting electronic bands with highly asymmetric spin polarization as well as greater TE efficiency, Cs2XMoBr6 materials are appropriate for uses in spintronics and energy harvesting.

Balancing Carrier Dynamics in Oxygen-Vacancy-Tuned Amorphous Ga2O3 Thin-Film Self-Powered Photoelectrochemical-Type Solar-Blind Photodetector Arrays for Underwater Imaging.

Underwater imaging technology plays a pivotal role in marine exploration and reconnaissance, necessitating photodetectors (PDs) with high responsivity, fast response speed, and low preparation costs. This study presents the synergistic optimization of responsivity and response speed in self-powered photoelectrochemical (PEC)-type photodetector arrays based on oxygen-vacancy-tuned amorphous gallium oxide (a-Ga2O3) thin films, specifically designed for solar-blind underwater detection. Utilizing a low-cost one-step sputtering process with controlled oxygen flow, a-Ga2O3 thin films with varying oxygen vacancy (VO) concentrations are fabricated. By balancing the trade-offs among electrocatalytic reactions, charge transfer, carrier recombination, and trapping, both the responsivity and response speed of a-Ga2O3-based self-powered PEC-PDs are simultaneously improved. Consequently, the optimized PEC-PDs demonstrated exceptional performance, achieving a responsivity of 33.75mA W-1 and response times of 12.8ms (rise) and 31.3ms (decay), outperforming the vast majority of similar devices. Furthermore, a pronounced positive correlation between anomalous transient photocurrent spikes and the concentration of VO defects is observed, offering compelling evidence for VO-mediated indirect recombination. Finally, the proof-of-concept solar-blind underwater imaging system, utilizing an array of self-powered PEC-PDs, demonstrated clear imaging capabilities in seawater. This work provides valuable insight into the potential for developing cost-effective, high-performance a-Ga2O3 thin-film-based PEC-PDs for advanced underwater imaging technology.

A Flexible Multifunctional Sensor Based on an AgNW@ZnONR Composite Material.

A multifunctional sensor comprising flexible and transparent ultraviolet (UV) photodetectors (PDs) with strain gauges based on Ag nanowire (AgNW)@ZnO nanorods (ZnONRs) was fabricated using a cost-effective, simple, and efficient method. High-aspect ratio silver nanowires were synthesized using the polyol method. An AgNW@ZnONR composite was formed via the hydrothermal method to ensure the multifunctional capability of the flexible sensors. After refining the process parameters, the size of the ZnO nanorods was decreased to fabricate pliable multifunctional sensors using AgNW@ZnONRs. At a deposition of 0.207 g of AgNW@ZnONRs, the sensor achieves its maximum switching ratio and fastest response time under conditions of 2000 μW/cm2 UV optical power density. With a ton (rise time) of 2.7 s and a toff (fall time) of 2.3 s, the ratio of Ion to Ioff current is 1151. Additionally, the sensor's maximum optical current value correlates linearly with UV light's power density. The maximum response current increased from 222.5 pA to 588.1 pA, an increase of 164.3%, when the bending angle was increased from 15° to 90° for the sensor with a deposition of 0.276 g of AgNW@ZnONRs. There was no degradation in the response of the sensors after 10,000 bending cycles, as they have excellent stability and repeatability, which means they can meet the requirements of wearable sensor applications. Therefore, there is great potential for the practical application of multifunctional AgNW@ZnONRs in flexible sensors.

Modulating Eco-friendly Colloidal AgGaS2 Quantum Dots for Highly Efficient Photodetection and Image Sensing via Direct Growth of Ternary AgInS2 Shell.

Tailoring the optoelectronic characteristics of colloidal quantum dots (QDs) by constructing a core/shell structure offers the potential to achieve high-performing solution-processed photoelectric conversion and information processing applications. In this work, the direct growth of wurtzite ternary AgInS2 (AIS) shell on eco-friendly AgGaS2 (AGS) core QDs is realized, giving rise to broadened visible light absorption, prolonged exciton lifetime and enhanced photoluminescence quantum yield (PLQY). Ultrafast transient absorption spectroscopy demonstrats that the photoinduced carrier separation and transfer kinetics of AGS QDs are significantly optimized following the AIS shell coating. As-synthesized environmentally benign AGS/AIS core/shell QDs are employed to fabricate photodetectors (PDs), showing a remarkable responsivity of 38.4 AW-1 and a detectivity of 2.4×1012 Jones under visible light illumination (405 nm). Moreover, the fabricated QDs-PDs exhibit superior image-sensing capability to record complex patterns with high resolution (160×160 pixels) under visible light illumination at 405 and 532 nm. The findings indicate that the direct growth of multinary narrow-band shell materials on eco-friendly QDs holds great promise to implement future "green", cost-effective and high-performance optoelectronic sensing/imaging systems.

Interfacial modification of CuO/Ga2O3 by plasmonic Pt for high performance self-powered solar-blind UV photodetector

Applications for solar-blind photodetectors (PDs) vary widely and include space communications, ozone monitoring, and more. In this study, pulsed laser deposition (PLD) and ion sputtering were employed to develop an unusual self-powered deep ultraviolet (UV) photodetector based on CuO/Ga2O3 with a Pt nanoparticles (NPs) interface. The Pt NPs interface transforms the device design from heterojunction to Schottky junction. The device features a low dark current of 83.2 fA and performs a high photo-to-dark current (Iphoto/Idark) ratio of 1.72 × 104, a specific detectivity (D*) of 9.98 × 1011 Jones, and a quick decay time of 56 ms upon 254 nm UV light at 196.5 μW/cm2 without any power supply. The CuO/Pt/Ga2O3 Schottky junction-based device outperforms the CuO/Ga2O3 heterojunction-based device in terms of detection capabilities in both biased and non-biased settings. This is explained by the Schottky barrier creation mechanism with both Ga2O3 and CuO films, as well as how the plasmon resonance effect (PR effect) balances the barrier on the Ga2O3 side. Furthermore, Pt NPs serve as a potential well, offering an additional recombination channel that accelerates the decay process when the light is turned off. Our findings pave the way for more optoelectronic uses of Ga2O3-based solar-blind UV photodetectors in the future.

Characterizing third-order intermodulation distortion of photodetectors based on de-coupling and de-embedding modulation distortion of modulators

A novel, to the best of our knowledge, electro-optical modulation method is proposed for measuring third-order intermodulation distortion of photodetectors (PDs) based on de-coupling and de-embedding modulation distortion of modulators. The method utilizes dual parallel intensity modulation to generate electro-optical stimulus signals with fast and fine sweeping capability, and it eliminates the nonlinear impact of modulators by using low-frequency bias swing, allowing a direct extraction of the third-order output intercept point (OIP3) of PD from the combined nonlinear response contributed by both the modulators and the PD. The OIP3 of PD is frequency-swept measured with our method and compared to those with the conventional method to check for consistency. The proposed method enables a modulator-distortion-free, fast, and fine sweeping measurement of PDs using a simple system.

Metal-semiconductor-metal UVA photodetector based on TiO2 thin films synthesized via liquid phase deposition method

In this work, titanium dioxide (TiO2) thin film-based metal-semiconductor–metal (MSM) ultraviolet (UV) photodetectors (PDs) were fabricated on glass substrates via liquid phase deposition (LPD) technique at various deposition time in the range of 3–6 h. Varying deposition time significantly impacted the physical properties of the films. Increasing the deposition time revealed a mixture of clusters and hexagonal-like structures in film’s morphology. The energy band gap of the TiO2 films decreased from 3.30 to 3.09 eV upon increasing the deposition time. Photodetection characteristics were examined by exposing the MSM UV PD to 390 nm UV light with an intensity of 1.6 mW cm−2 and a bias voltage of 5 V. The fabricated PDs implied characteristics of I-V ohmic contact. The optimum photodetection characteristics were achieved for TiO2 film deposited at 6 h which exhibited 36.9 μA maximum photocurrent, 20080.3% sensitivity, 201.80 gain, 225 mA W−1 responsivity, 81.07% external quantum efficiency, 0.276 s response time, and 0.274 s recovery time. The photoelectric properties of the films were strongly affected by the increased grain size and improved crystallinity of the films due to the prolonged deposition time. The optimum film demonstrated its potential to be a promising candidate for UV PD applications.

Enabling Low‐Noise, High‐Detectivity, Stable, and Flexible Perovskite Mesh Nanowire Photodetectors by Phenylethylamine Iodine Doping Strategy

AbstractThe poor stability, high noise, and low detectivity (D*) of perovskite mesh nanowire (PMN) photodetectors (PDs) seriously hinder their practical applications. Here, a phenylethylamine iodine doping strategy (PIDS) is introduced to solve these problems. The PIDS leads to the formation of 2D perovskite PEA2MAx‐1PbxI3x+1 (PEA = phenylethylamine, MA = methylamine) within MAPbI3 PMN, which not only prevents water and oxygen erosion to thwart PMN degradation but also inhibits the transport of dark state carriers to reduce dark current. As a result, the noise, D*, and stability of the PMN PD are simultaneously improved. The device exhibits low noise current (7.61 × 10−15 A Hz−1/2) and high D* of 3.2 × 1014 Jones, the highest D* value for PMN PDs reported to date. Moreover, the unpacked device sustains 100% of its initial performance after 2880 h of storage in the air (45–55% humidity), enabling it as the most stable MAPbI3 perovskite micro/nanostructure PD reported to date. Furthermore, the flexible device with PIDS exhibits comparable performance to that of the rigid device as well as great mechanical stability. Finally, the flexible device with PIDS demonstrates excellent optical imaging capability and a higher precision optical imaging potential than the commercial silicon photodiode S2386.

Vertically Stacked Broadband GNIF‐MoS2/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response

AbstractThe proposed model structure, featuring a gold (Au) nano‐island film (GNIF) integrated with a vertically stacked van der Waals heterojunction and offering an elegant platform for high‐performance, efficient, and sensitive photodetection across a broad spectral range, is designated as GNIF‐MoS₂/p‐Ge(MoS2 = Molybdenum disulfide, p‐Ge = p type germanium). The GNIF is fabricated via ultrathin film deposition, based on the surface dewetting properties of MoS2. The as‐fabricated photodetector (PD), offering ≈20 times reduction in dark current and characterized by wavelength‐dependent high responsivity (R(λ)), photoconductive gain (G(λ)), and detectivity (D(λ)), respond to a broad spectral range from visible light (400 nm) to short wave infrared (SWIR) (1600 nm). The ultrahigh transient response (τr) is found to be ≈2.5 and 16 µs for the 470 (visible light) and 1550 (SWIR) nm wavelengths, respectively, resulting in 3‐dB bandwidths of up to ≈48 kHz, which is considered high for such devices. To understand the inherent mechanisms of broadband detection and the high photoresponse and ultrafast transient response of PDs, a meticulous investigation is conducted on the wavelength‐dependent behaviors, depletion width changes, and material properties. The results provide valuable insights and a basis for the construction of suitable PDs based on nanometer‐thin metal films, 2D semiconductors, and a 3D hybrid structure.

Enhancing broadband absorption and photocurrent generation in carbon dots via P3HT integration

The growing interest in carbon dots (CDs) arises from their diverse applications and unique properties. This study addresses challenges in CDs for photodetector (PD) applications, specifically surface defects and trap states hindering efficient charge transport. CDs/P3HT composites were prepared to overcome these issues by incorporating CDs in a poly(3-hexylthiophene) (P3HT) matrix. Broad absorption in spectroscopic characterization revealed its utility in fabricating a broadband PD. The CDs/P3HT PD displays a remarkable broadband photoresponse, spanning both UV and visible regions. The CDs and P3HT are effectively combined via non-covalent π-π interactions constituted by their conjugated systems. The π-π interaction increases electron delocalization and facilitates efficient charge transfer due to band alignment at the junction interface. Hence, fabricated CDs/P3HT PD demonstrated enhanced photocurrent compared to pure CDs, exhibiting high responsivity of 6.12 × 10−3 AW−1 and detectivity of 0.69 × 109 Jones. This study highlights the potential of CD/P3HT composites for broadband photodetector applications with enhanced photoelectric conversion.

Localized surface plasmon resonance enhanced deep ultraviolet photodetectors based on Pd@Nb2CTx/AlGaN van der Waals heterojunctions

Localized surface plasmon resonance (LSPR) has been proven as an effective means to improve the performance of optoelectronic devices from infrared to ultraviolet region. However, due to the lack of suitable plasmon materials in the deep ultraviolet (DUV) region, studies in this field were relatively rare. Herein, a simple solution reduction method was proposed to decorate palladium nanoparticles (Pd NPs) onto two-dimensional (2D) niobium carbide Nb2CTx (MXene) nanosheets to fabricate Pd@Nb2CTx/aluminum-gallium nitride (AlGaN) van der Waals heterojunction (vdWH) DUV photodetectors (PDs). Thanks to the plasmon coupling between Pd@Nb2CTx and AlGaN, the obvious enhanced optical absorption and carrier excitation of the as-fabricated DUV PDs have been observed with a peak responsivity of 0.86 A/W, as well as a fast response (rise/decay time of 37.8/14.5 ms) under −3 V bias and 254 nm DUV illumination. This study provides direct evidence for LSPR of Pd NPs in the DUV region, which will develop an optional pathway for the structure design of DUV PDs.

Inorganic Semiconductor-Based Flexible UV Photodetector Arrays Achieved by Specific Flip-Chip Bonding.

In recent years, flexible UV photodetectors (PDs) with complex environmental adaptability and great wearability have attracted the attention of researchers worldwide. Wide bandgap inorganic semiconductor materials with excellent optoelectronic properties and mechanical stability are key functional materials for UV PD devices. However, the high temperature processing and inherent brittleness limit the further application of high-quality inorganic semiconductors in the field of flexible optoelectronics. In this work, we develop a specific flip-chip bonding fabrication technique that utilizes high-temperature treated inorganic semiconductor materials for high-performance flexible UV detection devices. Leveraging this technique, a 7 × 7 pixel flexible UV photodetector array (UV-FPDA) device based on a vertical architecture Mg-doped ZnO/NiO (Mg:ZnO/NiO) heterojunction transistor is built. The UV-FPDAs exhibit a high responsivity of 75.8 A/W and an outstanding detectivity of 8.5 × 1012 Jones. Besides, the UV-FPDAs also demonstrate excellent bending stability. Furthermore, the photoresponse characteristics of each pixel are trained and learned by an artificial neural network to achieve clear imaging of UV light information. Our results provide a new pathway for the application of inorganic semiconductors in the field of high-performance flexible UV photodetection.

Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD

Abstract Ga2O3 is a fast-developing wide band semiconductor for solar-blind ultraviolet (SBUV) photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga2O3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga2O3 films, which show high performance manifested in high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA/W, a photo-to-dark current ratio of 3.2×104 and a detectivity of 3.8×1013 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga2O3 films in the field of high-performance devices.

ε-InSe-based heterojunction photodetector and its performance modulation by growth pressure

Indium selenide (InSe) is a III-VI semiconductor with excellent optoelectronic properties that has been widely studied. In this work, a series of InSe films are successfully prepared by pulsed laser deposition (PLD) under different growth pressures ranging from 0.1 to 10 Pa. The structural characterization shows that the InSe films have a ε phase structure with the best film quality obtained at 1 Pa. The photoresponse of ε-InSe/Si heterojunction photodetectors (PDs) is thoroughly investigated under illumination of different laser wavelengths and powers. The results demonstrate that the photoresponse is strongly dependent on the growth pressure of the InSe films, with the optimal performance achieved at a growth pressure of 1 Pa. The ε-InSe/Si heterojunction PD at 1 Pa exhibits an ultra-broadband photoresponse spanning from 360 to 1064 nm with the best responsivity (R) of 6.68 × 10-2 A/W, detectivity (D) of 6.51 × 1010 Jones, external quantum efficiency (EQE) of 12.4 %, and response times of ∼ 35 ms. The influence of growth pressure on the PD performance can be attributed to its effects on the structural and morphological properties of the InSe film. This work provides a promising approach for the preparation of high-performance InSe-based optoelectronic devices.

Self-Driven Perovskite/Organic Quasi-Tandem Photodetectors Operating in Both Narrowband and Broadband Regimes.

Dual-band photodetectors (PDs) have attracted extensive research attention due to their great potential for diverse and refreshing application scenarios in full-color imaging, optical communication, and imaging detection. Here, a self-driven dual-band PD without filters and other auxiliary equipment to achieve a narrowband response in Mode 1 and a broadband response in Mode 2 was designed based on carrier-selective transmission narrowing (CSTN). The polymer material poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), which has the appropriate energy level, was selected to be the carrier-selective transmission layer. In Mode 1, the dual-band PD exhibits a near-infrared (NIR) narrowband response in 750-900 nm, which indicates a responsivity of 360 mA/W, a full-width at half-maximum (fwhm) of 81 nm, and a specific detectivity (D*) of 7.49 × 1010 Jones at 810 nm. Simultaneously, in Mode 2, the dual-band PD exhibits a UV-visible-NIR broadband responsivity of 180 mA/W and a specific detectivity (D*) of 3.8 × 1010 Jones at 520 nm. Our study provides a reliable idea for the commercial applications of dual-function photodetectors.

Self‐Powered Cs3Bi2I9/ZnO Heterojunction Photodetector with Dual‐Band Photoresponse

AbstractCs3Bi2I9/ZnO heterostructures are constructed by the growth of Cs3Bi2I9 layer onto the spin‐coated ZnO films by a modified antisolvent recrystallization method, a series of Cs3Bi2I9/ZnO heterojunction photodetectors (PDs) with varied growth times of Cs3Bi2I9 layer are fabricated. The construction of Cs3Bi2I9/ZnO heterojunction contributes to their improved photoelectric performance compared to ZnO‐based PD, and the Cs3Bi2I9 layer thickness plays an important role in tuning the photoelectric performance of these PDs. At 405 nm and 0 V bias, the optimized 6‐Cs3Bi2I9/ZnO PD generates a high photocurrent of −3.03 µA, a medium on/off ratio of 144.3, and a short response time of 16.4 ms/16.8 ms. It also exhibits superior dual‐band self‐powered photoresponse with two responsivity and detectivity peaks at 380 nm in the UV region and at 430 nm in the visible light region. At 380 nm, this PD presents the highest responsivity of 33.2 mA W−1 and detectivity of 1.07 × 1010 Jones. It is believed that the optimized growth of the Cs3Bi2I9 layer generates a depletion layer with suitable thickness near the interface, and the as‐promoted charge‐carrier separation and transport result in improved self‐powered properties. The rational construction of perovskite‐based heterojunction has proved as an efficient way to achieve self‐powered photodetection.

Improved UV Photoresponse Performance of ZnO Nanowire Array Photodetector via Effective Pt Nanoparticle Coupling.

Ultraviolet (UV) photodetectors (PDs) based on nanowire (NW) hold significant promise for applications in fire detection, optical communication, and environmental monitoring. As optoelectronic devices evolve towards lower dimensionality, multifunctionality, and integrability, multicolor PDs have become a research hotspot in optics and electronic information. This study investigates the enhancement of detection capability in a light-trapping ZnO NW array through modification with Pt nanoparticles (NPs) via magnetron sputtering and hydrothermal synthesis. The optimized PD exhibits superior performance, achieving a responsivity of 12.49 A/W, detectivity of 4.07 × 1012 Jones, and external quantum efficiency (EQE) of 4.19 × 103%, respectively. In addition, the Pt NPs/ZnO NW/ZnO PD maintains spectral selectivity in the UV region. These findings show the pivotal role of Pt NPs in enhancing photodetection performance through their strong light absorption and scattering properties. This improvement is associated with localized surface plasmon resonance induced by the Pt NPs, leading to enhanced incident light and interfacial charge separation for the specialized configurations of the nanodevice. Utilizing metal NPs for device modification represents a breakthrough that positively affects the preparation of high-performance ZnO-based UV PDs.

Synergistic Effect of Ionic Liquid and Embedded QDs on 2D Ferroelectric Perovskite Films with Narrow Phase Distribution for Self-Powered and Broad-Band Photodetectors.

2D layered metal halide perovskites (MHPs) are a potential material for fabricating self-powered photodetectors (PDs). Nevertheless, 2D MHPs produced via solution techniques frequently exhibit multiple quantum wells, leading to notable degradation in the device performance. Besides, the wide band gap in 2D perovskites limits their potential for broad-band photodetection. Integrating narrow-band gap materials with perovskite matrices is a viable strategy for broad-band PDs. In this study, the use of methylamine acetate (MAAc) as an additive in 2D perovskite precursors can effectively control the width of the quantum wells (QWs). The amount of MAAc greatly affects the phase purity. Subsequently, PbSe QDs were embedded into the 2D perovskite matrix with a broadened absorption spectrum and no negative effects on ferroelectric properties. PM6:Y6 was combined with the hybrid ferroelectric perovskite films to create a self-powered and broad-band PD with enhanced performance due to a ferro-pyro-phototronic effect, reaching a peak responsivity of 2.4 A W-1 at 940 nm.

Interfacial passivation by using an amorphous hafnium oxide thin layer toward improved CH3NH3PbI3/Si heterojunction photodetectors

In this paper, we reported the fabrication of improved CH3NH3PbI3/Si heterojunction photodetectors (PDs) achieved by passivating the interfacial defects by a low-temperature atomic layer deposition-grown thin amorphous HfO2 layer. The results suggested that the HfO2 thin layer effectively passivated the surface defects of Si and slightly improved the qualities of CH3NH3PbI3 thin films in terms of increasing the grain sizes. Current–voltage measurements suggested that the HfO2 thin layer suppressed interfacial Shockley–Read–Hall recombination, which decreased the dark current and simultaneously increased the photocurrent. However, a thick HfO2 layer resulted in a decrease in the photocurrent because of the insulting nature of HfO2. A champion performance was obtained by employing a 5 nm HfO2 layer, where the responsivity and detectivity were 0.6 mA/W and 8.0 × 1010 Jones, respectively, which are two times and four times as high as those PDs without the HfO2 layer. The results will provide a simple strategy for improving the performance of perovskite/Si heterojunction PDs in the future.