Abstract
In this work, titanium dioxide (TiO2) thin film-based metal-semiconductor–metal (MSM) ultraviolet (UV) photodetectors (PDs) were fabricated on glass substrates via liquid phase deposition (LPD) technique at various deposition time in the range of 3–6 h. Varying deposition time significantly impacted the physical properties of the films. Increasing the deposition time revealed a mixture of clusters and hexagonal-like structures in film’s morphology. The energy band gap of the TiO2 films decreased from 3.30 to 3.09 eV upon increasing the deposition time. Photodetection characteristics were examined by exposing the MSM UV PD to 390 nm UV light with an intensity of 1.6 mW cm−2 and a bias voltage of 5 V. The fabricated PDs implied characteristics of I-V ohmic contact. The optimum photodetection characteristics were achieved for TiO2 film deposited at 6 h which exhibited 36.9 μA maximum photocurrent, 20080.3% sensitivity, 201.80 gain, 225 mA W−1 responsivity, 81.07% external quantum efficiency, 0.276 s response time, and 0.274 s recovery time. The photoelectric properties of the films were strongly affected by the increased grain size and improved crystallinity of the films due to the prolonged deposition time. The optimum film demonstrated its potential to be a promising candidate for UV PD applications.
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