Abstract
Abstract Ga2O3 is a fast-developing wide band semiconductor for solar-blind ultraviolet (SBUV) photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga2O3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga2O3 films, which show high performance manifested in high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA/W, a photo-to-dark current ratio of 3.2×104 and a detectivity of 3.8×1013 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga2O3 films in the field of high-performance devices.
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