Parameter Extraction Technique Research Articles

Modal Parameter Analysis for Underdamped Mechanical Systems

There are many ways to model and to analyze discrete event systems. In general these systems lead to a non-linear characteristic equation description in linear algebra. This paper presents an analytical method for solving the characteristic equation of higher order, which arise when solving ordinary differential equations of motion of rigid body systems with 2 ≤ p° ≤ 10 degrees of freedom. The objective of this work was to express the characteristic equation in the form of product quadratic polynomial, from which the modal components could be found. To validate the model, the modal parameters extraction technique – Ibrahim Time Domain (ITD) – was used to extract modal parameters from artificial data developed in MATLAB environment. The extracted modal components were compared to those obtained from the analytical model.

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

A novel analytical direct parameter extraction technique for the small-signal equivalent circuit of SiGe HBTs under forward-active-mode operation is presented in this paper. After the extrinsic collector resistance and substrate-network elements removed from the measured S-parameter, several expressions for the related Y-parameter frequency response are derived in the form of rational functions and eight constant terms are simultaneously obtained. The circuit elements are then accurately extracted in an analytical closed-form manner based on the non-linear rational function fitting of device frequency response across the whole frequency range, without any numerical optimization or approximation. The proposed technique is successfully validated to SiGe HBTs with different device sizing and bias conditions from 100MHz to 20.89GHz, and the simulated S-parameters match well with the measured data in the desired frequency range.

Dispersion Management With Microwave Chirped Pulses in Metamaterials in the Negative Refraction Regime

This letter introduces an efficient technique for pulse compression and dispersion compensation using microwave chirped pulses propagating through metamaterials in the negative refraction regime. To accomplish this, we investigated infinitely wide and 1-, 3-, 5-, and 7-cells-thick metamaterial slabs using a finite difference in the time-domain method and parameter extraction technique. We demonstrate that by controlling the chirp of the initial pulse, in association with the metamaterial cell density/geometry and frequency response, it is possible not only to compress the pulse (by a factor of 2), but also to compensate pulse broadening due to chromatic dispersion.

Parameter extraction of solar cell models using mutative-scale parallel chaos optimization algorithm

To simulate solar cell systems or to optimize photovoltaic (PV) system performance, accurate parameter values of solar cell systems are extremely crucial. In this article, the parameter extraction of solar cell models is posed as an optimization process with an objective function minimizing the difference between the measured values and estimated data. A mutative-scale parallel chaos optimization algorithm (MPCOA) using crossover operation and merging operation is proposed for this optimization problem. To verify the performance of MPCOA, it is applied to extract the parameters of different solar cell models, i.e., double diode, single diode, and PV module. Comparison results with other parameter extraction techniques are in favor of the MPCOA, which signifies its potential as another optional method.

Estimation of the Dynamic Properties of Non-linear Packaging Materials Using a Reverse Multiple Input/Single Output Based Approach

During the distribution phase, packaged consignments are exposed to a variety of environmental hazards (such as vibrations) that, if excessively severe, may cause damage to or even destroy the product. Structural deterioration can be tracked by monitoring variations in the packaging system's modal parameters, particularly its natural frequency (stiffness). Natural frequency estimates are often extracted using a least-squares regression curve fit, applied to an estimate of the system's frequency response function (FRF). FRF estimates are generally obtained using the Fourier transform with a single input and single output (SISO). This approach is suitable for many applications; however, as the non-linearity of the system under analysis increases, the ability of this technique to accurately monitor changes in the system will decrease. In addition, when the excitation to the non-linear system is varied (increased or decreased amplitude), a SISO-based approach may indicate a shift in natural frequency (as a result of the varied input) even though no change in the condition of the system has occurred. This paper discusses an approach that is designed to separate the linear component of the system's FRF using a reverse multiple input/single output (RMISO) algorithm. Such separation will allow traditional modal parameter extraction (curve fitting) techniques to be used to monitor the condition of non-linear systems. The paper presents the results of experiments in which expanded polystyrene samples were subjected to broad-band random base excitation with a free-moving load placed atop the cushion sample. Continuous acceleration measurements of the vibration table and the free-moving load were used to compute the FRFs of the cushions, and the differences between a conventional (SISO) approach and the proposed RMISO-based parameter extraction technique were evaluated. Copyright © 2014 John Wiley & Sons, Ltd.

Modeling and parameters extraction of LDMOSFET device

To overcome parasitic parameters of the contact between probes and die in the radio frequency band, a small-signal equivalent circuit model concerning package effect for the LDMOSFET has been established in this paper. By measuring the S-parameter, using comparative experiments and improved Cold-FET technology to extract the parasitic parameters of the bonding wires and die, all the parameters have been obtained. Finally, by comparing the results between experiments and simulations, the accuracy of model and the feasibility of parameters extraction technique have been confirmed.

Authors' reply

This is a reply to comments from Hu etal. regarding, of which there are three concerns. The first concern in the comments is a one-to-one mapping relationship between coupling paths in a transversal array network topology and coupling elements in a physical filter structure. In conclusion, it is not necessary to determine the order of parallel paths corresponding to physical structures, as shown. This is because resonators in parallel paths of a transversal array network topology represent eigenmode resonances appearing in coupled resonators. This physical understanding has already been presented in using an example of a direct-coupled waveguide filter. The viewpoint of the order in parallel paths may come from a conventional design method of direct-coupled resonator filters, where the one-to-one mapping relationships can be easily found because the filters are composed of physically separated resonators. On the other hand, multiple resonances of a multi-mode resonator cannot be divided into physical coupling elements. In such cases, the transversal array network topology is a powerful tool for multi-mode filter designs. Therefore, three multi-mode filters have been demonstrated as examples of applications of our proposed parameter-extraction technique. The second concern in the comments of Hu et al. is the treatment of stray couplings in the transversal array coupling network. The stray couplings such as undesired cross couplings need to be evaluated in conventional filter designs based on direct-coupled resonator filter synthesis theory in order to obtain a desired frequency response. In the transversal resonator array network, as pointed out in, such stray couplings are included into parallel paths of resonators. We think that this is one of the advantages of the transversal resonator array network since coupled-resonator filters may be designed without any decomposition of main and stray couplings. In the initial design step of a filter, a well-known design approach of coupled-resonator filters is useful for intuitive designs, but stray couplings are not taken into account in this design step. In the final design step, the introduction of a transversal coupling network may help the fine adjustments of structural parameters, because all couplings are considered in terms of eigenmodes. To verify this idea, further studies will be needed. A similar design methodology has already been provided. The third concern in the comments of Hu etal. is a reference-phase equation.

Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry

Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for modeling the impact of temperature on device terminal characteristics. Gate metal resistance thermometry (GMRT) is applied to a GaAs pseudomorphic high-electron mobility transistor to measure its gate junction temperature. It is found that gate leakage current due to impact ionization can interfere with dc GMRT measurements. To the best of our knowledge, for the first time it is demonstrated that this can be largely avoided by instead applying an ac version of GMRT. However, the dynamic resistance of the gate leakage current path can interfere with ac GMRT. Measurements and thermal finite element method simulations of devices at constant power dissipation conclude that the bias dependence of the channel heat source profile affects the gate junction temperature. A parameter extraction technique is presented and used in device lifetime calculations to demonstrate MTTF variations of more than an order of magnitude (despite fixed power) due to bias-dependent self-heating.

Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

Direct Tunneling (DT) and Trap Assisted Tunneling (TAT) gate leakage current parameters have been extracted and verified considering automatic parameter extraction approach. The industry standard package IC-CAP is used to extract our leakage current model parameters. The model is coded in Verilog-A and the comparison between the model and measured data allows to obtain the model parameter values and parameters correlations/relations. The model and parameter extraction techniques have been used to study the impact of parameters in the gate leakage current based on the extracted parameter values. It is shown that the gate leakage current depends on the interfacial barrier height more strongly than the barrier height of the dielectric layer. There is almost the same scenario with respect to the carrier effective masses into the interfacial layer and the dielectric layer. The comparison between the simulated results and available measured gate leakage current transistor characteristics of Trigate MOSFETs shows good agreement.

Parameter extraction of solar cell models using repaired adaptive differential evolution

Parameter extraction of solar cell models plays an important role in the simulation and design calculation of photovoltaic (PV) systems. In this paper, in order to fast and accurately extract the solar cell parameters, an improved adaptive differential evolution with crossover rate repairing technique and ranking-based mutation is proposed. The proposed method is referred to as Rcr-IJADE, which is an improved version of JADE. In Rcr-IJADE, including the parameter adaptation presented in JADE, the crossover rate repairing technique and the ranking-based mutation are also synergized to improve the performance of JADE when solving the parameter extraction problems of solar cell models. In order to verify the performance of Rcr-IJADE, it is used to extract the parameters of different solar cell models, i.e., single diode, double diode, and PV module. Compared with other parameter extraction techniques, experimental results indicate the superiority of Rcr-IJADE in terms of the quality of final solutions, success rate, and convergence speed. In addition, the simulated data with the extracted parameters of Rcr-IJADE are in very good agreement with the experimental data in all cases.

Compact negative‐epsilon stop‐band structures based on double‐layer chiral inclusions

Here the authors propose to use electrically excited compact chiral resonators in microstrip configurations for realisation of weakly-radiating stop-band transmission lines. The fundamental resonant mode of these resonators can be excited by both electric and magnetic fields applied parallel to the spiral axis. The authors propose to use a racemic arrangement of an equal amount of left- and right-handed chiral particles between the ground plane and the signal strip and orient the particles so that they are excited by the electric field of the microstrip line. The advantage of this configuration (in addition to strong coupling and weak radiation from excited particles) is that the ground plane can be preserved from being etched (continuous ground structure). The other advantage is that the size of negative permittivity lines loaded with chiral particles can be made very small compared to previous implementations based on complementary split-ring resonators. The circuit models with properly extracted parameters accurately describe the behaviour of both negative permittivity and double-negative lines loaded with electrically coupled resonators. This parameter extraction technique is based on the comparison between the simulated (or measured) transmission and reflection characteristics of the host line loaded with such resonators and those obtained from its lumped-element equivalent circuit model.

Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET model

In this paper, automatic parameter extraction techniques of Agilent's IC-CAP modeling package are presented to extract our explicit compact model parameters. This model is developed based on a surface potential model and coded in Verilog-A. The model has been adapted to Trigate MOSFETs, includes short channel effects (SCEs) and allows accurate simulations of the device characteristics. The parameter extraction routines provide an effective way to extract the model parameters. The techniques minimize the discrepancy and error between the simulation results and the available experimental data for more accurate parameter values and reliable circuit simulation. Behavior of the second derivative of the drain current is also verified and proves to be accurate and continuous through the different operating regimes. The results show good agreement with measured transistor characteristics under different conditions and through all operating regimes.

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Transport mechanisms in nanocrystalline ZnO Thin Film Transistors (TFT) were investigated in a wide temperature range. The channel is located at the ZnO–SiO2 interface and controlled with a bottom gate as in a back-channel SOI MOSFET. In this work, we propose suitable mobility models that are able to provide a good agreement with the experimental results. Not only do these models account for the regular carrier transport mechanisms but they also address the physical properties of nanocrystalline ZnO films including the effect of grain boundaries. Simple parameter extraction techniques are explored and validated with numerical calculations. Our work highlights that nanocrystalline ZnO TFT provides high mobility, low threshold voltage and reasonable subthreshold swing due to good interface quality between the ZnO film and the gate insulator. The variation of these parameters at low temperature is measured and compared to the typical behavior in SOI MOSFETs.

Design and Analysis of Vertical Nanoparticles-Magnetic-Cored Inductors for RF ICs

We report the design and analysis of the first vertical magnetic-cored inductors in CMOS backend for radio-frequency (RF) ICs, which includes theoretical and experimental studies of device architecture, equivalent circuit model with parameter extraction technique, process development, and device characterization. Vertical magnetic cores with multiple-layer stacked-spiral structures are designed to realize compact inductive devices in RF ICs. A CMOS-compatible post-CMOS backend process module (CMOS +) and optimized high-permeability nanoparticles are utilized to achieve a high inductance-to-coil-area ratio ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> -density) in gigahertz range. The prototype six-layer inductors with NiZnCu ferrite nanoparticles-magnetic-core were fabricated in a commercial foundry 0.18-μm six-metal RF CMOS technology. A high <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> -density of over 700 nH/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to multigigahertz was obtained, with an 80% chip size reduction from the reference planar magnetic inductors. An equivalent circuit model with parameter extraction technique is developed to analyze magnetic enhancement effects. This work demonstrates the potential of design and integration of compact high-performance vertical magnetic-cored inductive devices into CMOS backend for high-quality and low-cost RF systems-on-a-chip.

(Invited) The Pseudo-MOSFET: Principles and Recent Trends

The pseudo-MOSFET (Ψ-MOSFET) is a fascinating transistor based on the upside-down MOS configuration of semiconductor-on-insulator (SOI) wafers. This technique has been conceived for quick characterization of as-grown SOI materials. MOSFET-like characteristics are measured and simple parameter extraction techniques deliver the material properties: carrier mobility and lifetime, threshold and flat-band voltages, density of interface traps and oxide charges, doping level. After reviewing the methodology for reliable characterization, we focus on recent trends enabling the enrichment of the technique.

A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact Models

A sequential parameter extraction technique describing the fitting targets and related parameters for compact insulated-gate bipolar transistor (IGBT) models is presented. Using 2-D device simulation data for a trench-type IGBT as reference, the performance of HiSIM-IGBT as an example of a compact IGBT model is compared to an IGBT macromodel. Parameter extraction with the compact model is fast and straightforward, owing to its physics-based modeling. Even with minimal extraction effort, the compact model fits the dc current and capacitance and reproduces the transient turnoff characteristics accurately.

Hybrid Freeman/Eigenvalue Decomposition Method With Extended Volume Scattering Model

In this letter, an advanced version of the hybrid Freeman/eigenvalue decomposition technique for land parameter extraction is presented with an illustrative example of application. The motivation arises from decomposition problems in obtaining a meaningful volume scattering estimation, so that the technique can be used for both oriented objects and vegetation/forest areas. The idea is to improve the accuracy of the required parameter extraction. Two strategies are adopted to increase the applicability of a hybrid Freeman/eigenvalue decomposition technique: One is the unitary transformation of the coherency matrix; the other is to use an extended volume scattering model. The extension of the volume scattering model plays an essential role for the hybrid Freeman/eigenvalue decomposition technique. Since the volume scattering power is evaluated by assuming that the <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$HV$</tex></formula> component is caused by vegetation only in the existing technique, an extended volume scattering power approach is utilized. It is shown that vegetation areas and oriented objects such as urban building areas are well discriminated by the proposed technique as compared to the existing techniques.

Editorial Special Section on the 2011 International Conference on Microelectronic Test Structures

The six papers in this special section are extended papers from the 2011 International Conference on Microelectronic Test Structures, held in Amsterdam, The Netherlands. The papers cover new advances in variation and stress characterization for complementary metal-oxide-semiconductor technology, improved parameter extraction techniques, and new test structures for process, doping, and temperature characterization.

Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme

The applicability of a partitioned-charge-based non-quasi-static (NQS) model is investigated using exact solutions for 1-D bipolar transistors. Limitations of the model to accurately predict $y_{21}(\omega)$ are overcome by further delaying the partitioned minority charge associated with the collector. A corresponding small-signal time-domain model is derived. The proposed model effectively includes the delays within both the quasi-neutral base and base–collector space-charge regions. Using only two extra nodes over the quasi-static bipolar transistor model HICUM, the NQS model is implemented using Verilog-A. The simplicity of the model yields straightforward parameter extraction techniques. Modeling results show excellent agreement with numerically simulated data.

Adaptive techniques for extraction of pre-seismic parameters of Total Electron Content (TEC) at anomaly crest station

Total electron content (TEC) data, obtained from satellites, are used in the search for imprints for identifying the probability factor of an impending earthquake. Extraction of earthquake induced signature is done mainly from day-to-day variations in TEC peak (TECpeak.). The use of a single parameter such as TECpeak is not always enough to formulate such a pointer. The paper therefore focuses on the need to introduce other markers such as the shape of TEC profile and to utilize any modification in the profile shape caused by an impending earthquake to identify precursors. An automatic pattern matching approach for processing global positioning system (GPS) generated TEC records is introduced to achieve this aim and TEC profiles are passed through a template framed from the time series of quiet day data. The Dynamic Time Warping (DTW) algorithm is adopted to look for deviations in the entire TEC profile of days prior to the earthquake with respect to the template. Variation, if any, would be used as an index of earthquake induced signature. A few case studies using this algorithm are presented in the paper. Work is based on TEC data collected from the GPS receiver at Guwahati (26° 10′ N, 91° 45′ E), an equatorial anomaly crest station.