Abstract
A sequential parameter extraction technique describing the fitting targets and related parameters for compact insulated-gate bipolar transistor (IGBT) models is presented. Using 2-D device simulation data for a trench-type IGBT as reference, the performance of HiSIM-IGBT as an example of a compact IGBT model is compared to an IGBT macromodel. Parameter extraction with the compact model is fast and straightforward, owing to its physics-based modeling. Even with minimal extraction effort, the compact model fits the dc current and capacitance and reproduces the transient turnoff characteristics accurately.
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