Abstract
Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors
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https://doi.org/10.4233/uuid:eefa5c78-8e23-4d4f-b566-a1bfb5d0d9a8
Publication Date: Jan 21, 2016 |
Citations: 1 |
Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors
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