Abstract
The purpose of this paper is to present a physics-based electro-thermal Saber®* model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and extending the previously developed physics-based silicon buffer layer IGBT electrothermal model and IGBT Model Parameter extrACtion Tools (IMPACT) to include SiC specific device and material properties. The validated simulation results in this paper demonstrate that the new electro-thermal Saber® model for high-voltage SiC buffer layer n-channel IGBTs can be used to describe the static and dynamic behaviors for a wide range of device designs and circuit conditions for IGBTs with blocking voltages from 12 kV to 20 kV. The new physics-based model provides both device and circuit predictive capability.
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