Abstract
The pseudo-MOSFET (Ψ-MOSFET) is a fascinating transistor based on the upside-down MOS configuration of semiconductor-on-insulator (SOI) wafers. This technique has been conceived for quick characterization of as-grown SOI materials. MOSFET-like characteristics are measured and simple parameter extraction techniques deliver the material properties: carrier mobility and lifetime, threshold and flat-band voltages, density of interface traps and oxide charges, doping level. After reviewing the methodology for reliable characterization, we focus on recent trends enabling the enrichment of the technique.
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