Modeling and parameters extraction of LDMOSFET device

Abstract

To overcome parasitic parameters of the contact between probes and die in the radio frequency band, a small-signal equivalent circuit model concerning package effect for the LDMOSFET has been established in this paper. By measuring the S-parameter, using comparative experiments and improved Cold-FET technology to extract the parasitic parameters of the bonding wires and die, all the parameters have been obtained. Finally, by comparing the results between experiments and simulations, the accuracy of model and the feasibility of parameters extraction technique have been confirmed.